A control device controls a contact probe in synchronization with a pulse-controlled light having a predetermined wavelength, a measurement instrument measures a characteristic of a sample to be inspected or an analysis sample, and a circuit constant or a defect structure of the sample to be inspected is estimated based on a circuit model created by an electric characteristic analysis device configured to generate the circuit model based on a value measured by the measurement instrument and a detection signal of secondary electrons detected by the charged particle beam device.

A semiconductor inspection device 1 having a first measurement mode and a second measurement mode includes: an electron optical system configured to irradiate a sample with an electron beam; an optical system configured to irradiate the sample with light; an electron detector configured to detect a signal electron; a photodetector 29 configured to detect signal light; a control unit 11 configured to control the electron optical system and the optical system such that an electron beam and light are emitted under a first irradiation condition in the first measurement mode, and to control the electron optical system and the optical system such that an electron beam and light are emitted under a second irradiation condition in the second measurement mode; and a computer configured to process a detection signal from the electron detector or the photodetector.

According to the present invention there is provided a method for testing electrical and optical parameters of a group of light-emitting devices, the method comprising the steps of, bringing the group of devices to a test position wherein light emitted by the devices in the group can be received into an integrating sphere; performing, electrical testing of the devices in the group in parallel, so that electrical parameters of each of the devices in the group can be determined; performing, in a sequential device-by-device manner, optical testing of the devices in the group, so that optical parameters of each of the devices in the group can be determined. There is further provided a corresponding assembly.

A measurement tool for measuring an electrical parameter of a metal film deposited on a front side of a workpiece includes an electrical sensor connected to a workpiece contact point, an energy beam source with a beam impact location on the front side, a holder and a translation mechanism capable of translating the holder relative to the workpiece support, the beam source supported on the holder, and a computer programmed to sense a behavior of an electrical parameter sensed by the sensor.

Multiple planes within the sample are exposed from a single perspective for contact by an electrical probe. The sample can be milled at a non-orthogonal angle to expose different layers as sloped surfaces. The sloped edges of multiple, parallel conductor planes provide access to the multiple levels from above. The planes can be accessed, for example, for contacting with an electrical probe for applying or sensing a voltage. The level of an exposed layer to be contacted can be identified, for example, by counting down the exposed layers from the sample surface, since the non-orthogonal mill makes all layers visible from above. Alternatively, the sample can be milled orthogonally to the surface, and then tilted and/or rotated to provide access to multiple levels of the device. The milling is preferably performed away from the region of interest, to provide electrical access to the region while minimizing damage to the region.

An electron beam absorbed current measurement method includes connecting a conductive probe to a conductive structure of a sample, irradiating a pulsed electron beam along the conductive structure to generate an alternating current in the conductive probe, and determining a presence of a high resistance defect in the conductive structure based on at least one of a delay of a rising edge of the alternating current waveform and a decrease in amplitude of the alternating current waveform.

A measurement tool for measuring an electrical parameter of a metal film deposited on a front side of a workpiece includes an electrical sensor connected to a workpiece contact point, an energy beam source with a beam impact location on the front side, a holder and a translation mechanism capable of translating the holder relative to the workpiece support, the beam source supported on the holder, and a computer programmed to sense a behavior of an electrical parameter sensed by the sensor.

A nanoprober system can land a probe onto a device under test (DUT) by positioning a conductive probe above the DUT by a motion control device; applying electrical signals between the conductive probe and the DUT; measuring electrical responses from the applied electrical signal; calculating impedance magnitude values and/or phase angle values based on the measured electrical response values; causing the conductive probe to move towards the DUT while continuing to calculate impedance magnitude values and/or phase angle values from measured electrical response; determining that the conductive probe has contacted the DUT based on a change in the calculated impedance magnitude values and/or phase angle values; and signaling to the motion control device to stop moving the probe towards the DUT based on the change in the calculated impedance magnitude values and/or phase angle values.

A method for estimating at least one electrical property of a semiconductor device is provided. The method includes forming the semiconductor device and at least one testing unit on a substrate, irradiating the testing unit with at least one electron beam, estimating electrons from the testing unit induced by the electron beam, and estimating the electrical property of the semiconductor device according to intensity of the estimated electrons from the testing unit.

An embodiment discloses an inspection apparatus and an inspection method, the inspection apparatus including a stage on which a plurality of micro-light-emitting elements is disposed, an electron beam emitting unit configured to emit electron beams to the plurality of micro-light-emitting elements, an optical detection unit configured to measure light emitted from the plurality of micro-light-emitting elements, and an electron beam guide unit disposed between the electron beam emitting unit and the plurality of micro-light-emitting elements.