In a measurement using a quantum sensor, the range of measurable physical quantities is increased while maintaining sensor sensitivity. A measuring device (10) comprises an irradiation unit (2) that irradiates a quantum sensor element (1) with electromagnetic waves for operating an electron spin state of the quantum sensor element (1) that changes due to interaction (8) with a measurement target (9), in a pulse sequence in which a time τ between n/2 pulses is a variable value; and a physical quantity measuring unit (3) that calculates a physical quantity of the measurement target based on the electron spin state after the interaction with the measurement target (9).

An inspection apparatus including an illumination light source, a sensing probe and a processing device is provided. The illumination light source emits an illumination beam to simultaneously irradiate the plurality of light-emitting diode. The sensing probe is configured to measure a charge distribution, an electric field distribution, or a voltage distribution on the plurality of light-emitting diodes simultaneously irradiated by the illumination beam. The processing device determines a plurality of electro-optical characteristics of the plurality of light-emitting diodes through the charge distribution, the electric field distribution, or the voltage distribution on the plurality of light-emitting diodes simultaneously irradiated by the illumination beam. Moreover, a method of for inspecting light-emitting diodes is also provided.

A control part of a semiconductor fault analysis device outputs an alignment command that moves a chuck to a position at which a target is detectable by a first optical detection part and then aligns an optical axis of a second optical system with an optical axis of a first optical system with the target as a reference, and outputs an analysis command that applies a stimulus signal to a semiconductor device and receives light from the semiconductor device emitted according to a stimulus signal with at least one of a first optical detection part and a second optical detection part in a state in which a positional relationship between the optical axis of the first optical system and the optical axis of the second optical system is maintained.

According to the present invention, there is provided a group III nitride semiconductor substrate (free-standing substrate 30) that is formed of group III nitride semiconductor crystals. Both exposed first and second main surfaces in a relationship of top and bottom are semipolar planes. A variation coefficient of an emission wavelength of each of the first and second main surfaces, which is calculated by dividing a standard deviation of an emission wavelength by an average value of the emission wavelength, is 0.05% or less in photoluminescence (PL) measurement in which mapping is performed in units of an area of 1 mm.sup.2 by emitting helium-cadmium (He—Cd) laser, which has a wavelength of 325 nm and an output of 10 mW or more and 40 mW or less, at room temperature. In a case where devices are manufactured over the free-standing substrate 30, variations in quality among the devices are suppressed.

The present disclosure relates to a steady-state microwave conductivity method that includes modulating a light beam to form an amplitude modulated light having a modulation frequency ω.sub.1, producing a microwave waveform, exposing a sample to the amplitude modulated light and a first portion of the microwave waveform to produce an amplitude modulation signal on the first portion of the microwave waveform, and mixing a second portion of the microwave waveform and the amplitude modulation signal to produce a first signal and a second signal.

A method for detecting defects in a GaN high electron mobility transistor is disclosed. The method includes steps of measuring a plurality of electrical characteristics of a GaN high electron mobility transistor, measuring the plurality of electrical characteristics after performing a deterioration test on the GaN high electron mobility transistor, irradiating the GaN high electron mobility transistor in turns with a plurality of light sources with different wavelengths and measuring the plurality of electrical characteristics after each irradiation of the GaN high electron mobility transistor by each of the plurality of light sources, and comparing changes of the plurality of electrical characteristics measured in the above steps to determine the defect location of the GaN high electron mobility transistor.

An optically-monitored and/or optically-controlled electronic device is described. The device includes at least one of a semiconductor transistor or a semiconductor diode. An optical detector is configured to detect light emitted by the at least one of the semiconductor transistor or the semiconductor diode during operation. A signal processor is configured to communicate with the optical detector to receive information regarding the light detected. The signal processor is further configured to provide information concerning at least one of an electrical current flowing in, a temperature of, or a condition of the at least one of the semiconductor transistor or the semiconductor diode during operation.

An optically-monitored and/or optically-controlled electronic device is described. The device includes at least one of a semiconductor transistor or a semiconductor diode. An optical detector is configured to detect light emitted by the at least one of the semiconductor transistor or the semiconductor diode during operation. A signal processor is configured to communicate with the optical detector to receive information regarding the light detected. The signal processor is further configured to provide information concerning at least one of an electrical current flowing in, a temperature of, or a condition of the at least one of the semiconductor transistor or the semiconductor diode during operation.

An optical testing circuit on a wafer includes an optical input configured to receive an optical test signal and photodetectors configured to generate corresponding electrical signals in response to optical processing of the optical test signal through the optical testing circuit. The electrical signals are simultaneously sensed by a probe circuit and then processed. In one process, test data from the electrical signals is simultaneously generated at each step of a sweep in wavelength of the optical test signal and output in response to a step change. In another process, the electrical signals are sequentially selected and the sweep in wavelength of the optical test signal is performed for each selected electrical signal to generate the test data.

Various embodiments are described that relate to failure determination for an integrated circuit. An integrated circuit can be tested to determine if the integrated circuit is functioning properly. The integrated circuit can be subjected to a specific radiation such that the integrated circuit produces a response. This response can be compared against an expected response to determine if the response matches the expected response. If the response does not match the expected response, then the integrated circuit fails the test. If the response matches the expected response, then the integrated circuit passes the test.