Provided is a wafer prober. The wafer probing stage of the wafer prober includes: a lower plate; a plurality of lifting pillars mounted on an upper surface of the lower plate; and an upper plate mounted on upper ends of the plurality of lifting pillars, wherein the plurality of lifting pillars are located between the upper plate and the lower plate and ends of the lifting pillars are configured to lift up and down in a vertical direction, and wherein a height and a slope of the upper plate are adjusted according to heights of the lifting pillars. The wafer probing stage can adjust a height of the chuck arranged on the upper plate and a slope or flatness of the chuck by adjusting a height of each lifting pillar according to a weight applied to each lifting pillar.

A method is described for determining the resistance temperature characteristic of a ceramic glow plug, wherein the glow plug is heated at a specified power, wherein before the heating it is first determined whether the glow plug is an aged glow plug, and then, if the glow plug has not been detected as an aged glow plug, the glow plug is heated at a first specified power and the resistance value thereby achieved is assigned to a temperature that is anticipated to be the final temperature when heating a factory-outlet glow plug at this first power, or if the glow plug has been detected as an aged glow plug, the glow plug is heated at a reduced power which is smaller than the first power, and the resistance value achieved thereby is assigned to the same temperature that is also anticipated when heating a factory-outlet glow plug at the first power.

A method of determining whether a silicon-carbide semiconductor device, which has a metal oxide semiconductor (MOS) gate structure and a built-in diode, is a conforming product. The method includes measuring an ON voltage of the silicon carbide semiconductor device, passing a forward current through the built-in diode of the silicon carbide semiconductor device, measuring another ON voltage of the silicon carbide semiconductor device, which is the ON voltage of the silicon carbide semiconductor device after passing the forward current, calculating a rate of change between the ON voltage and the another ON voltage, and determining that the silicon carbide semiconductor device is a conforming product unless the calculated rate of change is less than 3%.

The invention relates to a device for positioning a semiconductor die in a wafer prober, the device comprising a carrier plate and a clamp on a front surface of the carrier plate, the dimensions of the carrier plate matching a standard geometry required by the wafer prober for receiving a semiconductor wafer to be probed by the wafer prober, the clamp being reversibly movable against a force of an elastic element between an open position and a closed position, the clamp being adapted for fixing the die on the carrier plate in the closed position and for releasing the die in the open position.

A probing system includes a chuck configured to support a device under test (DUT); a probe card disposed above the chuck and including a plurality of probes protruding from the probe card toward the chuck; and a platen disposed between the chuck and the probe card and configured to support the probe card, wherein the chuck includes a shielding member disposed between the platen and the chuck.

A laser beam from a laser optical system is incident onto a semiconductor wafer. Thermal radiation light from the semiconductor wafer is incident onto an infrared detector. The infrared detector outputs a signal based on the intensity of the thermal radiation light. A processing device calculates a sheet resistance of the semiconductor wafer that is annealed by the laser beam on the basis of an output value of the infrared detector, and outputs a calculation value of the sheet resistance to an output device.

A semiconductor test system has a film frame including a tape portion with one or more openings through the tape portion. The opening is disposed in a center region of the tape portion of the film frame. The film frame may have conductive traces formed on or through the tape portion. A thin semiconductor wafer includes a conductive layer formed over a surface of the semiconductor wafer. The semiconductor wafer is mounted over the opening in the tape portion of the film frame. A wafer probe chuck includes a lower surface and raised surface. The film frame is mounted to the wafer probe chuck with the raised surface extending through the opening in the tape portion to contact the conductive layer of the semiconductor wafer. The semiconductor wafer is probe tested through the opening in the tape portion of the film frame.

Implementations of methods of making a semiconductor device may include: providing a partial semiconductor wafer. The method may also include providing a wafer holder including a tape portion with one or more openings through the tape portion. The method may include mounting the partial semiconductor wafer over the one or more openings in the tape portion of the wafer holder and providing an electrical connection to the partial semiconductor wafer through the one or more openings in the tape portion during probe test.

A test wafer according to an embodiment of the present disclosure is a test wafer used for simulation of heat emission of devices on a wafer, and includes a silicon wafer and a silicon heater bonded to a surface of the silicon wafer.

A method of analyzing defects in a semiconductor device includes: collecting current data by applying a test voltage to the semiconductor device; extracting data within a decrease range from the current data; dividing the current data into a first component value and a second component value using the current data and the data extracted from within the decrease range; calculating a first quality index from the first component value satisfying a first function; and calculating a second quality index from the second component value satisfying a second function that is different from the first function.