G01R31/2853

High voltage integrated circuit testing interface assembly

An integrated circuit testing assembly, comprising a slab having a slab axis, and a first electrode and second electrode affixed relative to the slab. The first electrode has a first major axis parallel to the slab axis, is coupled to receive a first voltage for coupling to a first set of pins on an integrated circuit, and includes a first surface area facing the slab axis, wherein the first surface area does not include a surface discontinuity. The second electrode has a second major axis parallel to the slab axis, is coupled to receive a second voltage for coupling to second first set of pins on an integrated circuit, and includes a second surface area facing the slab axis, wherein the second surface area does not include a surface discontinuity.

TAMPER DETECTION FOR A CHIP PACKAGE

Chip packages with improved tamper resistance and methods of using such chip packages to provide improved tamper resistance. A lead frame includes a die attach paddle, a plurality of outer lead fingers, and a plurality of inner lead fingers located between the outer lead fingers and the die attach paddle. A chip is attached to the die attach paddle. The chip includes a surface having an outer boundary and a plurality of bond pads arranged proximate to the outer boundary. A first plurality of wires extend from the outer lead fingers to respective locations on the surface of the chip that are interior of the outer boundary relative to the bond pads. A tamper detection circuit is coupled with the first plurality of wires. A second plurality of wires extend from the inner lead fingers to the bond pads on the chip. The second plurality of wires are located between the lead frame and the first plurality of wires.

OUTPUT TERMINAL FAULT DETECTION CIRCUIT

A circuit includes a gain stage, first and second amplifiers, and a comparison circuit. The gain stage has an input and an output. The first amplifier has an input and an output. The input of the first amplifier is coupled to the input of the gain stage. The second amplifier has an input and an output. The input of the second amplifier is coupled to the output of the gain stage. The comparison circuit is coupled to the outputs of the first and second amplifiers. The comparison circuit is configured to compare signals on the outputs of the first and second amplifiers and to generate a fault flag signal responsive to the output signal from the first amplifier being different than the output signal from the second amplifier.

GALLIUM NITRIDE-BASED DEVICES AND METHODS OF TESTING THEREOF

An integrated circuit includes a first circuit, formed based on one or more Group III-V compound materials, that is configured to operate with a first voltage range. The integrated circuit includes a second circuit, also formed based on the one or more Group III-V compound materials, that is operatively coupled to the first circuit and configured to operate with a second voltage range, wherein the second voltage range is substantially higher than the first voltage range. The integrated circuit includes a set of first test terminals connected to the first circuit. The integrated circuit includes a set of second test terminals connected to the second circuit. Test signals applied to the set of first test terminals and to the set of second test terminals, respectively, are independent from each other.

TESTING SYSTEM, METHOD FOR TESTING AN INTEGRATED CIRCUIT AND A CIRCUIT BOARD INCLUDING THE SAME

A testing system includes a subtractor and a divider. The subtractor is configured to receive a first voltage of a circuit being tested and a second voltage of the circuit, and to derive a difference between the first voltage and the second voltage. The divider is configured to receive the difference between the first voltage and the second voltage, and to derive a resistance of the circuit by dividing (i) the difference between the first voltage and the second voltage by (ii) a difference between a first current applied to the circuit and a second current applied to the circuit. The first voltage is corresponding to the first current, and the second voltage is corresponding to the second current.

SEMICONDUCTOR DEVICE AND MULTI-CHIP MODULE
20170350933 · 2017-12-07 ·

Provided is a semiconductor inspection circuit which is capable of inspecting connection states of power supply, ground, and signal bumps in a semiconductor package or a printed circuit board equipped with a semiconductor LSI mounted in a product operation state. As a means to solve the problem, a circuit capable of switching a path is provided at an input portion of a driver/receiver, a mechanism capable of transferring an output of a path switching circuit near a receiver circuit to a voltage waveform circuit with an internal variable terminal is provided, and a breakage state of a bump can be observed in the product operation state by observing a DC level at a terminal having a certain DC resistance when a signal bump connection state is observed and receiving a step wave and observing a response waveform thereof when an IO power supply bump connection state is observed.

Through substrate via scan cell with comparator mux, and flip-flop
09835678 · 2017-12-05 · ·

An integrated circuit die includes a substrate of semiconductor material having a top surface, a bottom surface, and an opening through the substrate between the top surface and the bottom surface. A through silicon via (TSV) has a conductive body in the opening, has a top contact point coupled to the body at the top surface, and has a bottom contact point coupled to the body at the bottom surface. A scan cell has a serial input, a serial output, control inputs, a voltage reference input, a response input coupled to one of the contact points, and a stimulus output coupled to the other one of the contact points.

SECURITY CIRCUITRY FOR BONDED STRUCTURES
20220373593 · 2022-11-24 ·

A bonded structure is disclosed. The bonded structure can include a first semiconductor element having a first front side and a first back side opposite the first front side. The bonded structure can include a second semiconductor element having a second front side and a second back side opposite the second front side, the first front side of the first semiconductor element directly bonded to the second front side of the second semiconductor element along a bond interface without an adhesive. The bonded structure can include security circuitry extending across the bond interface, the security circuitry electrically connected to the first and second semiconductor elements

TEST DEVICE
20170343604 · 2017-11-30 ·

A test device for testing an electronic device has a base, a first mounting plane, a first support element, a plurality of second support elements, a plurality of test elements, and a control unit. The first mounting plane is mounted on the base. The first support element is slidable on the first mounting plane, the second support elements are slidable on the first support element, and the test elements are slidable on the second support elements. The control unit electrically coupled to the test elements controls the test elements to provide impact force on the electronic device.

MIXED HIGH-RESOLUTION AND LOW-RESOLUTION INSPECTION FOR TAMPER DETECTION
20230176117 · 2023-06-08 ·

Embodiments of the invention include a computer-implemented method that includes controlling, using a processor, a high-resolution optical inspection tool (HROIT) to identify a reference die tamper circuit on a reference die of a wafer; and controlling, using the processor, a low-resolution optical inspection tool (LROIT) to use the reference die tamper circuit to determine that the reference die tamper circuit is on a second die of the wafer.