A stacked semiconductor device includes: a plurality of semiconductor chips that are stacked in a vertical direction, wherein each of the semiconductor chips includes: a plurality of first through-electrodes; a plurality of second through-electrodes positioned adjacent to the first through-electrodes; a first voltage driving circuit suitable for providing the first through-electrodes with a test voltage or a ground voltage based on a first driving control signal; a second voltage driving circuit suitable for providing the second through-electrodes with the test voltage or the ground voltage based on a second driving control signal; and a failure detection circuit suitable for generating a failure signal based on a plurality of first detection signals received through the first through-electrodes and a plurality of second detection signals received through the second through-electrodes.

Examples of an electronic device are described. In some examples, the electronic device includes a first shared line of a plurality of first contacts to respectively connect to a plurality of integrated circuits, a plurality of second lines of respective second contacts to respectively connect to the plurality of integrated circuits, and a third shared line of a plurality of third contacts to respectively connect to the plurality of integrated circuits. In some examples, the electronic device includes circuitry to determine whether one of the third contacts is connected to an integrated circuit based on a state of the first shared line and a state of one of the second lines that is associated with the one of the third contacts.

An array of metal-oxide-metal (MOM) capacitors formed in an integrated circuit (IC) structure may be used for evaluating misalignments between patterned layers of the IC structure. The array of MOM capacitors may be formed in a selected set of patterned layers, e.g., a via layer formed between a pair of metal interconnect layers. The MOM capacitors may be programmed with different patterned layer alignments (e.g., built in to photomasks or reticles used to form the patterned layers) to define an array of different alignments. When the MOM capacitors are formed on the wafer, the actual patterned layer alignments capacitors may differ from the programmed layer alignments due a process-related misalignment. The MOM capacitors may be subjected to electrical testing to identify this process-related misalignment, which may be used for initiating a correcting action, e.g., adjusting a manufacturing process or discarding misaligned IC structures or devices.

Embodiments of the disclosure are drawn to apparatuses and methods for testing the resistance of through silicon vias (TSVs) which may be used, for example, to couple multiple memory dies of a semiconductor memory device. A force amplifier may selectively provide a known current along a mesh wiring structure and through the TSV to be tested. The force amplifier may be positioned on a vacant area of the memory device, while the mesh wiring structure may be positioned in an area beneath the TSVs of the layers of the device. A chopper instrumentation amplifier may be selectively coupled to the TSV to be tested to amplify a voltage across the TSV generated by the current passing through the TSV. The chopper instrumentation amplifier may be capable of determining small resistance values of the TSV.

The present invention discloses an isolation circuit having test mechanism. An isolation circuit component performs signal transmission when a signal that a control terminal receives has an enabling state and performs signal isolation when the signal has a disabling state. The test circuit includes a multiplexer and a control circuit. Under a shifting operation state in a test mode, the control circuit controls the multiplexer to select an operation input terminal to receive and output an isolation control signal having the enabling state to the control input terminal. Under a capturing operation state in the test mode, the control circuit controls the multiplexer to select a test input terminal to receive and output the test signal to the control input terminal. The control circuit further determines whether the isolation circuit performs signal transmission or signal isolation according to the signals at the data input terminal and the data output terminal.

According to one embodiment, a semiconductor device includes a wiring board that has a first surface and a second surface opposed to the first surface, a semiconductor chip provided on the first surface, external connection terminals provided on the second surface, a sealing resin layer provided on the first surface, and a conductive shield layer that covers at least a portion of a side surface of the wiring board and the sealing resin layer. The wiring board includes a first ground wire that is electrically connected to the conductive shield layer, and a second ground wire that is electrically connected to the conductive shield layer and is electrically insulated from the first ground wire.

A semiconductor device and a method of testing the same are provided. A semiconductor device includes a Design Under Test (DUT), a processing core configured to execute test software to determine an optimum operating voltage of the DUT, and a protection circuit configured to block the transmission of undefined signals generated by the DUT while the processing core executes the test software.

An IC includes a plurality of pads at a top surface of a semiconductor wafer, an amplifier configured to receive a first AC signal at an input terminal, and output a second AC signal at an output terminal, a first detection circuit coupled to the input terminal and configured to output a first DC voltage to a first pad of the plurality of pads responsive to the first AC signal, and a second detection circuit coupled to the output terminal and configured to output a second DC voltage to a second pad of the plurality of pads responsive to the second AC signal.

A semiconductor device includes first and second chips in a package. A first pad is on the first chip and electrically connected to a node between a power supply pad and a ground pad on the first chip. Second and third pads are on the second chip. An internal wiring connects the first pad to the second pad within the package. A power circuit on the semiconductor chip configured to supply a current to the second pad. A switch is on the second chip between the second pad and the power supply circuit to connect or disconnect the second pad from the power circuit. A control circuit is on the second chip and configured to output a first signal for the switch in response to a test signal supplied to the third pad and a second signal to the power circuit to cause the power circuit to output current.

An input/output (I/O) block for a semiconductor integrated circuit (IC), which includes: at least one I/O buffer, configured to define at least one signal path in respect of a connection to a remote I/O block via a communication channel, each signal path causing a respective signal edge slope; and an I/O sensor, coupled to the at least one signal path and configured to generate an output signal indicative of one or both of: (a) a timing difference between the signal edge for a first signal path and the signal edge for a second signal path, and (b) an eye pattern parameter for one or more of the at least one signal path.