An electronic device including a processor and a sensor may be provided. The processor obtains a first degree of degradation of a first core based on a first parameter value associated with a lifetime of the first core and a first operating level associated with an operation of the first core. The processor obtains a second degree of degradation of a second core based on a second parameter value associated with a lifetime of the second core and a second operating level associated with an operation of the second core. The processor schedules a task of the first core and the second core based on the first degree of degradation and the second degree of degradation. The sensor provides the first parameter value and the first operating level to the first core and the second parameter value and the second operating level to the second core.

A method for characterizing an integrated circuit that includes ramping the supply voltage to an integrated circuit as a function of time for each of the transistors in the integrated circuit, and measuring a power supply current for the integrated circuit during the ramping of the power supply voltage. The measured peaks in the power supply current are a current pulse that identifies an operation state in which each of the transistors are in an on state. The peaks in the power supply current are compared to the reference peaks for the power supply current for a reference circuit having a same functionality as the integrated circuit to determine the integrated circuit's fitness.

Systems and methods for semiconductor design evaluation. IC layout information of a circuit design is received, and the circuit design is decomposed into smaller circuit pieces. Each circuit piece has IC layout information and a netlist. For each circuit piece, a set of strike models is selected based on the layout information and the net-list of the circuit piece and received radiation environment information. Each strike model has circuit components with voltage values corresponding to a respective particle strike. For each selected strike model of a circuit piece: a radiation susceptibility metric is determined by comparing functional results of simulation of the of the strike model with functional results of simulation of the circuit piece. For each circuit piece, a radiation susceptibility metric is determined based on the radiation susceptibility metrics generated for each selected strike model of the circuit piece.

The measurement method includes operations of applying a first gate bias voltage to a gate terminal of a first transistor that is included in a radio frequency (RF) power amplifier during a direct current (DC) measurement period, wherein the first transistor operates in a linear operation mode during the DC measurement period; measuring a first drain-source voltage of the first transistor and a current flowing through the first transistor via a connection node during the DC measurement period; applying a second gate bias voltage and a drain bias voltage to a gate terminal and a drain terminal of a second transistor that is electrically connected to the first transistor via the connection node; and measuring a DC value of the second transistor via the connection node during the DC measurement period.

A test board and a test apparatus having the same are disclosed. The test board includes a base plate including a connector and a plurality of mounting areas in a matrix shape having a mounting row in a first direction and a mounting column in a second direction, a plurality of test units arranged on the mounting areas of the base plate and a test object is mounted in each of the mounting areas, and a fluid supplier disposed on the base plate and supplying a test fluid to each of the test units having a test temperature and a supplementary fluid to the test object to reduce a temperature difference between an actual temperature of the test object and the test temperature such that the actual temperature of the test objects is substantially below the test temperature.

The disclosure performs a pre-test that checks electrical connections between each electrical contact of the socket and the corresponding pin of the semiconductor chip during a pre-test stage before a burn-in test. The electrical connection between each of the electrical contacts and each of the pins may be checked through multiple signal channels. Even when one of the signal channels failed, the pre-test and the burn-in test may still be performed as long as another one of the signal channels passes the pre-test. In addition, the pre-test stage through multiple signal channels also provides information for determining whether the failure of semiconductor chip is caused by the electrical connection between the socket of the burn-in board or the semiconductor chip itself.

An evaluation module configured to evaluate the lifespan of a multichip module, the multichip module comprising a first substrate and multiple chips under evaluation, includes a second substrate, configured to be the same as the first substrate, and having attachment positions corresponding to the attachment positions on the first substrate, and at least one evaluation chip, configured to be the same as the multiple chips under evaluation. The number of evaluation chips is less than the number of chips under evaluation by at least one. The at least one evaluation chip is arranged at an attachment position on the second substrate, such that the at least one evaluation chip and the chip under evaluation arranged at the corresponding attachment position on the multichip module have the same cooling performance and sustain the same thermal stress. The present disclosure also discloses a method for evaluating the lifespan of a multichip module.

The measurement method includes operations of applying a first gate bias voltage to a gate terminal of a first transistor that is included in a radio frequency (RF) power amplifier during a direct current (DC) measurement period, wherein the first transistor operates in a linear operation mode during the DC measurement period; measuring a first drain-source voltage of the first transistor and a current flowing through the first transistor via a connection node during the DC measurement period; applying a second gate bias voltage and a drain bias voltage to a gate terminal and a drain terminal of a second transistor that is electrically connected to the first transistor via the connection node; and measuring a DC value of the second transistor via the connection node during the DC measurement period.

An electronic device including a processor and a sensor may be provided. The processor obtains a first degree of degradation of a first core based on a first parameter value associated with a lifetime of the first core and a first operating level associated with an operation of the first core. The processor obtains a second degree of degradation of a second core based on a second parameter value associated with a lifetime of the second core and a second operating level associated with an operation of the second core. The processor schedules a task of the first core and the second core based on the first degree of degradation and the second degree of degradation. The sensor provides the first parameter value and the first operating level to the first core and the second parameter value and the second operating level to the second core.

A method of testing an integrated circuit of a device is described. Air is allowed through a fluid line to modify a size of a volume defined between the first and second components of an actuator to move a contactor support structure relative to the apparatus and urge terminals on the contactor support structure against contacts on the device. Air is automatically released from the fluid line through a pressure relief valve when a pressure of the air in the fluid line reaches a predetermined value. The holder is moved relative to the apparatus frame to disengage the terminals from the contacts while maintaining the first and second components of the actuator in a substantially stationary relationship with one another. A connecting arrangement is provided including first and second connecting pieces with complementary interengaging formations that restricts movement of the contactor substrate relative to the distribution board substrate in a tangential direction.