Systems and methods for monitoring a number of operating conditions of a programmable device are disclosed. In some implementations, the system may include a root monitor including circuitry configured to generate a reference voltage, a plurality of sensors and satellite monitors distributed across the programmable device, and a interconnect system coupled to the root monitor and to each of the plurality of satellite monitors. Each of the satellite monitors may be in a vicinity of and coupled to a corresponding one of the plurality of sensors via a local interconnect. The interconnect system may include one or more analog channels configured to distribute the reference voltage to each of the plurality of satellite monitors, and may include one or more digital channels configured to selectively route digital data from each of the plurality of satellite monitors to the root monitor as data packets.

A display device including a substrate having a first side surface, a first surface, a second surface opposite to the first surface, a first chamfered surface extending from an edge of the first surface to the first side surface, a second chamfered surface extending from an edge of the second surface t the first side surface, a pixel on the first surface of the substrate and including a light emitting element configured to emit light, a first driving pad at the edge of the first surface of the substrate and electrically connected to the pixel, and a side wiring on the first surface, the first chamfered surface, the first side surface, the second chamfered surface, and the second surface of the substrate. The first driving pad has a flat portion connected to the side wiring.

An integrated circuit, comprising a plurality of pins, including a signal output pin. The integrated circuit also comprises a plurality of signal nodes. Each node in the plurality of signal nodes is operable to store a respective internal data signal. The integrated circuit also comprises a plurality of testing circuits. Each testing circuit in the plurality of testing circuits configured to sample a respective internal data state and in response to concurrently couple a unique output signal to a same pin in the plurality of pins, other than the signal output pin.

A display device includes a substrate including a first display area, a second display area, and a non-display area, a plurality of first signal lines extending in a first direction and disposed in the first display area, a plurality of second signal lines extending from the non-display area in the first direction and disposed in the second display area, a plurality of connection lines connected to the first signal lines and extending to the non-display area via the first display area and the second display area, and a test circuit portion disposed in the non-display area. At least some of the plurality of connection lines and at least some of the second signal lines are electrically the test circuit portion.

One or more die stacks are disposed on a redistribution layer (RDL) to make an electronic package. The die stacks include a die and one or more Through Silicon Via (TSV) dies. Other components and/or layers, e.g. interposes layers, can be included in the structure. An epoxy layer disposed on the RDL top surface and surrounds and attached to all the TSV die sides and all the die sides. Testing circuitry is located in various locations in some embodiments. Locations including in the handler, die, TSV dies, interposes, etc. Testing methods are disclosed, Methods of making including “die first” and “die last” methods are also disclosed. Methods of making heterogenous integrated structure and the resulting structures are also disclosed, particularly for large scale, e.g. wafer and panel size, applications.

A test method for testing connectivity of a semiconductor structure includes operations as follows. A semiconductor structure and a detection transistor are provided. The semiconductor structure includes a through silicon via structure having a first terminal and a second terminal arranged to be opposite. An intrinsic conductivity factor of the detection transistor is obtained. The detection transistor is turned on upon receiving a test signal, and a test voltage is provided to the second terminal, to enable the detection transistor to operate in a deep triode region, and a current flowing through the second terminal is obtained during operation of the detection transistor in the deep triode region. A resistance of the through silicon via structure is obtained based on the intrinsic conductivity factor, an operating voltage, the test voltage, and the current flowing through the second terminal.

A test and measurement circuit including a capacitor in parallel with a device under test, a direct current voltage source configured to charge the capacitor, a pulse generator configured to generate a pulse for testing the device under test, and a sensor for determining a current in the device under test.

A semiconductor test structure includes a field-effect transistor and a metal connection structure. The field-effect transistor includes a substrate with first doping type, a gate located on a surface of the substrate, and a source region with a second doping type and a drain region with the second doping type in the substrate, the source region and the drain region are located on two sides of the gate, respectively. The metal connection structure is connected with the gate; the metal connection structure forms a Schottky contact with the substrate.

Provided are a semiconductor wafer and a test method. The semiconductor wafer includes a substrate including multiple die regions and scribe line regions positioned between adjacent die regions; circuit test devices, positioned in the scribe line regions and provided with multiple test ports; anti-crack conductive structures, positioned in the scribe line regions and around the die regions, and positioned between the circuit test devices and the die regions; and at least one first wire for each circuit test device, one end of the first wire being connected to the corresponding test port, and the other end of the first wire being connected to the adjacent anti-crack conductive structure. The embodiments solve the problem of lack of wiring space for wires in the scribe line regions by utilizing the anti-crack conductive structures to provide test signals to the circuit test devices.

A semiconductor testing structure forming method includes: a semiconductor substrate is provided, and the semiconductor substrate includes a plurality of active areas arranged separately; a first conductive wire is formed at a preset distance from the plurality of active areas in the semiconductor substrate, and the first conductive wire is connected with a substrate of a respective active device formed in each of the plurality of active areas; a plurality of first contact holes is formed on the first conductive wire; and a first metal layer is formed on top of each of the plurality of first contact holes to obtain the semiconductor testing structure, where the first metal layer is electrically connected with a first common pad and the first common pad is configured to perform an electric performance test on the semiconductor testing structure.