A test method is provided to test a semiconductor integrated circuit including an analog-to-digital converter and/or a digital-to-analog converter. An analog test signal having a test pattern is generated using an analog test signal generator or a digital test signal having the test pattern using a digital test signal generator. An analog output signal corresponding to the test pattern is generated by applying, as a digital input signal, the digital test signal having the test pattern to a digital-to-analog converter responsive to generation of the digital test signal. A digital output signal corresponding to the test pattern is generated by applying, as an analog input signal, the analog test signal having the test pattern or the analog output signal corresponding to the test pattern to an analog-to-digital converter. A normality of the semiconductor integrated circuit is determined based on the digital output signal corresponding to the test pattern.

The present disclosure provides an electrical test structure, a semiconductor structure and an electrical test method. In the electrical test structure, in a first direction, the electrical test structure includes a first layer, an interconnect hole and a second layer arranged in a stack, and the interconnect hole is in contact with the first layer; the second layer includes a body part and a test part, and the test part is connected to the body part; the interconnect hole is configured as, when an offset distance of the interconnect hole relative to a preset position in a second direction is less than a first preset distance, or an offset distance of the interconnect hole relative to the preset position in a third direction is less than a second preset distance, the interconnect hole is spaced apart from the test part.

A test method for testing connectivity of a semiconductor structure includes operations as follows. A semiconductor structure and a detection transistor are provided. The semiconductor structure includes a through silicon via structure having a first terminal and a second terminal arranged to be opposite. An intrinsic conductivity factor of the detection transistor is obtained. The detection transistor is turned on upon receiving a test signal, and a test voltage is provided to the second terminal, to enable the detection transistor to operate in a deep triode region, and a current flowing through the second terminal is obtained during operation of the detection transistor in the deep triode region. A resistance of the through silicon via structure is obtained based on the intrinsic conductivity factor, an operating voltage, the test voltage, and the current flowing through the second terminal.

A testing apparatus for Data Storage Devices (DSDs) includes a chassis and at least one interface module configured to be removably inserted into the chassis and house a plurality of interface boards. Each interface board includes a DSD connector for connecting a DSD to the interface board and a backplane connector for connecting to a backplane for communicating with a respective computing unit. In one aspect, the at least one interface module includes a housing and a plurality of openings in a side of the housing with each opening configured to receive a respective interface board. A plurality of guide member pairs is positioned to guide respective interface boards when inserted into respective openings such that the backplane connector is located at a respective predetermined location for connecting to the backplane. In another aspect, the interface boards are removable from the interface module.

A method for identifying a latch-up structure includes the following: in a chip layout, a first N-type heavily doped region connected to a first input/output pad and located in a P-type substrate is found; a first P-type heavily doped region located in an N-well and a second P-type heavily doped region located in the P-type substrate, both of which are adjacent to the first N-type heavily doped region, are found; a second N-type heavily doped region adjacent to the first P-type heavily doped region and located in the N-well is found, wherein the N-well is located on the P-type substrate; and an area formed by the first P-type heavily doped region, the first N-type heavily doped region, the second P-type heavily doped region, the second N-type heavily doped region, the N-well and the P-type substrate is identified as the latch-up structure.

In an embodiment a method includes providing a substrate having at least one conductor track situated thereon, applying at least one accumulation of an electrically conductive material to a surface of the conductor track, providing a carrier having at least one electrical contact, applying an electrically conductive adhesive to the at least one accumulation of the electrically conductive material and/or the at least one electrical contact and arranging the substrate and the carrier such that the accumulation of the electrically conductive material and the at least one electrical contact are situated opposite and at a distance from one another, wherein the electrically conductive adhesive forms a mechanical and electrical connection between the accumulation of the electrically conductive material and the at least one electrical contact, and wherein an interspace between the at least one accumulation of the electrically conductive material and the at least one electrical contact is filled with the electrically conductive adhesive.

A module substrate for a semiconductor module includes: a wiring substrate having an upper surface and a lower surface opposite to the upper surface, wherein the wiring substrate includes a circuit wiring and a plurality of via holes extending from the upper surface to the lower surface in a thickness direction; a plurality of test terminals respectively provided on the via holes and electrically connected to the circuit wiring, and a fastening thin film provided on the wiring substrate and covering the via holes, wherein the fastening thin film has a predetermined thickness such that a portion of the fastening thin film is penetrated when an interface is pin is inserted into the portion of the fastening thin film through the via hole from the upper surface, and the portion of the penetrated fastening thin film holds the penetrating interface inspection pin.

Embodiments of the disclosure provide a crack detecting and monitoring system, including: a plurality of electrically conductive structures extending about a protective barrier formed in an inactive region of an integrated circuit (IC), wherein an active region of the IC is enclosed within the protective barrier; and a plurality of stages of sensing circuits connected in series for sensing a change in an electrical characteristic of each of the plurality of structures and for receiving an enable signal, wherein each sensing circuit is coupled to a respective structure of the plurality of structures, the change in the electrical characteristic indicating damage to the respective structure, wherein each sensing circuit includes a circuit for selectively generating the enable signal for a next sensing circuit in the plurality of stages of sensing circuits.

An embodiment of the present invention provides a conductive particle used for a testing socket electrically connecting a lead of a device to be tested and a pad of a test board by being arranged between the device to be tested and the test board, wherein the conductive particle comprises a plurality of protrusions formed at equal intervals along a circumference.

The present disclosure relates to a device for carrying a chip, and a device and a method for testing a chip. The device for carrying a chip is configured to fasten chips of different sizes, and includes a support box and a plurality of first elastic snap rings. The support box is configured to carry a chip. A first connection terminal of the first elastic snap ring is provided on a first inner side wall of the support box, a second connection terminal of the first elastic snap ring is suspended, and is configured to be in contact with the chip and provide a pressure in a first direction for the chip because an elastic body of the first elastic snap ring is in an elastically compressed state.