Patent classifications
G01R31/2884
CIRCUITS AND METHODS FOR TRACKING MINIMUM VOLTAGE AT MULTIPLE SENSE POINTS
An integrated circuit including a comparator having a first input to receive a reference voltage, a second input, and an output to provide an under-voltage indicator. Sense points are configured to provide a plurality of sense point voltages, each sense point providing a corresponding sense point voltage of the plurality of sense point voltages; and a minimum voltage tracking circuit configured to receive the plurality of sense point voltages and provide an output voltage which tracks whichever sense point voltage of the plurality of sense point voltages is currently a minimum sense point voltage. The comparator receives the output voltage at the second input and asserts the under-voltage indicator when the output voltage is below the reference voltage.
CHIP TESTING APPARATUS AND SYSTEM
A chip testing apparatus and system suitable for performing testing on multiple chips in a chip cluster are provided. The chip testing apparatus includes a signal interface and a test design circuit. The signal interface transmits an input signal and multiple driving signals in parallel from a test equipment to each of the chips. The test design circuit receives multiple output signals from the chips through the signal interface and serially outputs a test data to the test equipment according to the output signals.
SEMICONDUCTOR DEVICE AND TEST SYSTEM
The degree of freedom of an abnormality detection target location in a solid-state imaging device in which a plurality of substrates are joined is improved. A semiconductor device includes a connection line and a detection circuit. A plurality of semiconductor substrates are joined in the semiconductor device. Then, in the semiconductor device, the connection line is wired across the plurality of semiconductor substrates. The detection circuit detects the presence or absence of an abnormality in a joint surface of the plurality of semiconductor substrates based on an energization state of the connection line when enable has been set by a predetermined control signal.
PARALLEL TEST CELL WITH SELF ACTUATED SOCKETS
An automated test equipment (ATE) includes a test interface board assembly. The test interface board includes a socket configured to provide electrical couplings from the test interface board to a device under test (DUT). The socket is further configured to accept an active thermal interposer (ATI) device while the DUT is disposed in the socket. The socket includes a plurality of spring-loaded roller retention devices configured to retain one or more devices in the socket. The ATE further includes a Z-axis interface plate configured to open the plurality of spring-loaded roller retention devices to enable insertion of the DUT into the socket and an ATI placement plate configured to open the plurality of spring-loaded roller retention devices to enable insertion of the ATI device into the socket.
SEMICONDUCTOR STRUCTURE, MEMORY, AND CRACK TESTING METHOD
A semiconductor structure includes: a through silicon via penetrating a base; and a protection structure, including: a conductive first test ring and a conductive second test ring both arranged around the through silicon via and electrically insulated from the through silicon via; a first dielectric layer located between the first test ring and the second test ring and configured to electrically isolate the first test ring from the second test ring; and a first connection layer located in the first dielectric layer and configured to be electrically connected to the first test ring and the second test ring.
ANALYZING APPARATUS, ANALYSIS METHOD, AND COMPUTER-READABLE MEDIUM
Provided is an analyzing apparatus including a charge amount analyzing unit configured to analyze, by using a device simulator configured to simulate a transient change of a charge in a semiconductor device having a first main terminal and a second main terminal, a change of a charge amount at any one of the terminals when a power source voltage applied between the first main terminal and the second main terminal is changed by a displacement voltage smaller than an initial voltage after a current flowing between the first main terminal and the second main terminal is stabilized with the semiconductor device being set to an ON state and the power source voltage being set to the initial voltage, and a capacitance calculating unit configured to compute a terminal capacitance at any one of the terminals based on the change of the charge amount analyzed by the charge amount analyzing unit.
DEVICE FOR TESTING CHIP OR DIE WITH BETTER SYSTEM IR DROP
The present invention provides a device for testing a chip, wherein the device includes a testing board and an interposer. The testing board has a plurality of pads for providing a plurality of test signals. The interposer board includes a plurality of passive components, and at least one of the passive components is coupled between a supply voltage and a ground voltage, and the supply voltage and the ground voltage are received from a power pad and a ground pad of the plurality of pads of the testing board, respectively; wherein the chip is positioned in the device, the chip receives the test signals including the supply voltage and the ground voltage from the power pad and the ground pad of the testing board, respectively.
MEMORY TEMPERATURE CONTROLLING METHOD AND MEMORY TEMPERATURE CONTROLLING SYSTEM
A memory temperature controlling method and a memory temperature controlling system are provided. The method includes: performing, by a testing equipment, test modes on a memory storage device, and obtaining a first internal temperature of a memory control circuit unit, a second internal temperature of each memory package and a surface temperature of each memory package to establish a linear relationship expression of the first internal temperature, the second internal temperature and the surface temperature; using, by the memory storage device, the linear relationship expression to calculate a predicted surface temperature of a rewritable non-volatile memory based on a first current internal temperature of the memory control circuit unit and a second current internal temperature of each memory package; adjusting, by the memory storage device, an operating frequency for accessing the rewritable non-volatile memory based on the predicted surface temperature.
SEMICONDUCTOR DEVICE WITH INTERFACE STRUCTURE
The present application discloses a semiconductor device with an interface structure. The interface structure includes an interface board configured to be fixed onto and electrically coupled to a chuck of a testing equipment, and a first object positioned on a first surface of the interface board and electrically coupled to the interface board. The first object is configured to be analyzed by the testing equipment.
Die stack override for die testing
Disclosed herein are structures and techniques for exposing circuitry in die testing. For example, in some embodiments, an integrated circuit (IC) die may include: first conductive contacts at a first face of the die; second conductive contacts at a second face of the die; die stack emulation circuitry; other circuitry; and a switch coupled to the second conductive contacts, the die stack emulation circuitry, and the other circuitry, wherein the switch is to couple the second conductive contacts to the other circuitry when the switch is in a first state, and the switch is to couple the die stack emulation circuitry to the other circuitry when the switch is in a second state different from the first state.