Provided is a contact pin comprising: a hollow first plunger that includes a first contact portion provided on one end side in a first direction and a first enlarged portion which is enlarged in a second direction intersecting the first direction; a second plunger, the one end of which is inserted into the first plunger and that includes a second contact portion provided on the other end side in the first direction and a second enlarged portion provided in a protruding portion protruding from the first plunger so as to be enlarged in the second direction; and a spring provided between the first and second plungers so as to surround the first and second plungers, wherein the first enlarged portion forms a curve shape to bulge outward.

The probe assembly operates with a circuit board test apparatus and includes a main test probe and a secondary test probes. The probe assembly is capable of moving in X, Y and Z directions relative to a circuit board being tested (UUT). The two test probes are movable linearly relative to each other and rotatable together so as to accurately locate the two probes on selected pins on the UUT, for receiving signals from the selected pins, The received signals are transmitted to a display apparatus.

A testing system for electrical interconnects having a removable device under test printed circuit board (DUT PCB) that electrically connects with the electrical testing components of the system. A removable top plate is placed on top of the DUT PCB and is locked in place by a plurality of locking posts that selectively connect to cam surfaces in the top plate that pull the top plate down sandwiching the DUT PCB between the top plate and the electrical testing components of the system. An actuator is also presented that presses the device under test into the electrical interconnect at increments where tests are performed on one, some or all of the contact points of the electrical interconnect. This information is then analyzed and graphed to assist with determine the optimum force and/or height to use during actual use.

A test apparatus for testing electrical parameters of a target chip includes: a function generator; a switch matrix module; a plurality of source measurement units (SMUs); at least one of the SMUs is configured to provide power supply for the target chip; at least one of the SMUs is coupled to the switch matrix module; and at least two of said SMUs are test SMUs coupled to ports of the target chip and the function generator.

An embodiment includes an apparatus comprising: a substrate including a surface that comprises first, second, and third apertures; and first, second, and third probes comprising proximal ends that are respectively included within and project from the first, second, and third apertures; wherein the first, second, and third probes: (a)(i) intersect a plane that is generally coplanar with the surface, (a)(ii) include distal ends configured to contact electrical contacts of a device under test (DUT), and (a)(iii) are generally linear and each include a major axis that is non-orthogonal to the plane. Other embodiments are described herein.

A probing system includes a chuck configured to support a device under test (DUT); a probe card disposed above the chuck and including a plurality of probes protruding from the probe card toward the chuck; and a platen disposed between the chuck and the probe card and configured to support the probe card, wherein the chuck includes a shielding member disposed between the platen and the chuck.

An alloy material includes: a composition containing 17 at % to 25 at % of silver (Ag), 30 at % to 45 at % of palladium (Pd), and 30 at % to 53 at % of copper (Cu) in a composition range of a ternary alloy of Ag, Pd, and Cu; and at least one of manganese (Mn), tin (Sn), silicon (Si), antimony (Sb), titanium (Ti) and magnesium (Mg) added to the composition in a range of 4.5 at % or less, and the Mn in a range of 0.5 at % to 3.5 at %, the Sn in a range of 1 at % to 2 at %, the Si in a range of 0.5 at % to 2 at %, the Sb in a range of 0.5 at % to 3 at %, the Ti in a range of 0.5 at % to 2 at %, and the Mg in a range of 0.5 at % to 3.5 at % are added to the composition.

An apparatus is described for burn-in and/or functional testing of microelectronic circuits of unsingulated wafers. A large number of power, ground, and signal connections can be made to a large number of contacts on a wafer. The apparatus has a cartridge that allows for fanning-in of electric paths. A distribution board has a plurality of interfaces that are strategically positioned to provide a dense configuration. The interfaces are connected through flexible attachments to an array of first connector modules. Each one of the first connector modules can be independently connected to a respective one of a plurality of second connector modules, thereby reducing stresses on a frame of the apparatus. Further features include for example a piston that allows for tight control of forces exerted by terminals onto contacts of a wafer.

An integrated circuit integrated on a semiconductor material die and adapted to be at least partly tested wirelessly, wherein circuitry for setting a selected radio communication frequencies to be used for the wireless test of the integrated circuit are integrated on the semiconductor material die.

A contact for burning-in and testing a semiconductor IC and a socket device including the contact are proposed. The contact includes: an upper terminal part (111) having an upper tip part (111b) at an upper end part thereof; a lower terminal part (112) having a lower tip part (112c) at a lower end part thereof and provided on the same axis as the upper terminal part (111); and an elastic part (113) elastically supporting the upper terminal part (111) and the lower terminal part (112), wherein the upper terminal part (111) and the lower terminal part (112) include a shoulder part (111a) and a shoulder part (112a), respectively, formed by protruding therefrom in width directions thereof, and the elastic part (113) has a third width (w3), and includes a first strip (113a) and a second strip (113b).