Patent classifications
G01R31/3004
Signal Compensation Method and Device
A signal compensation method and device, where the method includes receiving a signal sequence suffering from intersymbol interference (ISI), setting a first filtering coefficient to perform filter compensation on the received signal sequence to obtain a first compensation signal sequence, setting a balance filtering coefficient to perform filter compensation on the first compensation signal sequence to obtain a balance compensation result, where the balance filtering coefficient is obtained by adjusting, according to a first compensation error, a balance filtering coefficient set last time, performing sequence estimation on the balance compensation result and outputting the balance compensation result, where the first compensation error adjusts the balance filtering coefficient set to perform filter compensation on the first compensation signal sequence in an iterative manner, thereby effectively compensating for the signal sequence suffering from the ISI, and improving performance of an optical fiber communications system.
TIMING/POWER RISK OPTIMIZED SELECTIVE VOLTAGE BINNING USING NON-LINEAR VOLTAGE SLOPE
Systems and methods for optimizing timing/power risk SVB using a customer-supplied, non-linear voltage slope. Chips are manufactured according to an integrated circuit design. The minimum operating voltage and hardware variations for each device in the design is determined and a process distribution for the chips is divided into process windows. Vmax and Vmin to support system frequency are determined for each process window. Vmin vs. process-bin mean and sigma sensitivity is calculated using information about specific devices. The voltage for each process window that generates Vmin for specific devices is identified. Power at the slow end and fast end of each process window is evaluated using the voltage to support system frequency. Pmax is determined. Vmax for each process window that generates Pmax is determined. A voltage is identified between Vmin and Vmax that maximizes the timing margin for system frequency while minimizing risk for Pmax. The chips are sorted into different process windows, based on the voltage identified.
Semiconductor device
A semiconductor device includes a period defining block suitable for generating a period defining signal corresponding to a predetermined test time period based on a test mode signal and one or more command signals; and a monitoring block suitable for generating a monitoring signal corresponding to an oscillation signal during the test time period based on the period defining signal.
Apparatus and a Method for Measuring a Device Current of a Device Under Test
An apparatus for measuring a device current of a device under test (DUT) includes a first circuit including a first terminal for coupling to a first connection terminal of the DUT. The first circuit is configured to supply a first test voltage for the first terminal and to output a first output voltage sensed at the first terminal. The apparatus further includes a second circuit having a second terminal for coupling to a second connection terminal of the DUT. The second circuit is configured to supply a second test voltage for the second terminal and to output a second output voltage sensed at the second terminal. The apparatus further includes a third circuit configured to determine the device current of the DUT based on the first output voltage, the second output voltage, the first test voltage and the second test voltage. The first circuit and the second circuit are identical.
Integrated circuit spike check test point identification apparatus and method
A nontransitory computer-readable program storage medium storing program instructions. The program, when executed by a processor, has the processor capable of receiving a set of input data, the input data relating to devices on a test board for testing a device under test. The program, when executed by a processor, also is capable of transforming the set of input data into test board mapping data. The test board mapping data comprises an ordered listing of potential test points along a path that couples to a conductive surface, wherein the potential test points are derived from at least one of the test board attributes. Further, the program, when executed by a processor, is capable of identifying a selected test point from among the one or more potential test points, the selected test point for spike check probing of the device under test.
SEMICONDUCTOR DEVICE HAVING CIRCUITRY FOR DETECTING ABNORMALITIES IN A POWER SUPPLY WIRING NETWORK
A semiconductor device is capable of detecting a power supply voltage abnormality without degrading the performance of internal circuits. The semiconductor device includes a plurality of power supply inspection circuits and a result storage register. The power supply inspection circuits detect a power supply voltage abnormality in each pad that couples an internal wiring disposed in the semiconductor device to another part disposed outside of the semiconductor device. The result storage register stores inspection results indicated by result signals output from the power supply inspection circuits.
SELF-REFERENCED ON-DIE VOLTAGE DROOP DETECTOR
A self-referenced on-die voltage droop detector generates a reference voltage from the supply voltage of an integrated circuit's power distribution network, and compares this reference voltage to the transient supply voltage in order to detect voltage droops. The detector responds to detected occurrences of voltage droop with low latency by virtue of being located on-die. Also, by generating the reference voltage from the integrated circuit's power domain rather than using a separate reference voltage source, the detector does not introduce noise and distortion associated with a separate power domain.
Method and Apparatus for Calculating Kink Current of SOI Device
The present application discloses a method and apparatus for calculating the kink current of SOI device, which is used to solve the problem that the kink current calculation in the prior art is not accurate and is not suitable for circuit simulation. The method includes: obtaining the impact ionization factor, the parasitic transistor effect factor, and the drain saturation current of the SOI device respectively; and calculating the kink current of the SOI device according to the impact ionization factor, the parasitic transistor effect factor, and the drain saturation current.
TEST APPARATUS AND TEST METHOD TO A MEMORY DEVICE
A test system is disclosed. The test system includes a tester, a first voltage stabilization circuit, and a device under test (DUT). The tester generates a first operational voltage and a control signal. The first voltage stabilization circuit transmits a second operational voltage, associated with the first operational voltage, to a socket board. The DUT operates with the second operational voltage received through the socket board. The first voltage stabilization circuit is further configured to control, according to the control signal, the second operational voltage to have a first voltage level when the DUT is operating.
IDENTIFYING DATA VALID WINDOWS
A tester including an interface configured to interface with an electronic device and a logic circuit. The logic circuit includes a pattern generator and at least one finite-state machine and is configured to sequentially acquire read data from the electronic device at sequential testing points of a testing range for evaluating an operating parameter of the electronic device or the tester until a set of consecutive passing points having a first passing point and a last passing point is identified, in response to identifying the first passing point, write data within the logic circuit of the tester identifying the first passing point, in response to identifying the second passing point, write data within the logic circuit of the tester identifying the second passing point, and output only data identifying the first passing point and data identifying the last passing point to a software application.