Data indicative of location information of a potential defect of interest revealed in a specimen and of one or more layers of the specimen corresponding to the potential defect of interest may be received. A die layout clip may be generated in accordance with the data by deriving the die layout clip based on the location information of the potential defect of interest and the one or more layers of the specimen corresponding to the potential defect of interest. The die layout clip may include information indicative of one or more patterns characterizing an inspection area that includes the potential defect of interest of the specimen. The generated die layout clip may be transmitted to a semiconductor inspection unit where an inspection by the semiconductor inspection unit of a semiconductor wafer that includes the specimen corresponding to the potential defect of interest is based on the one or more patterns of the die layout clip.

An example system includes a receptacle to house a device under test (DUT); an antenna for exchanging signals with the DUT, where at least some of the signals are for use in performing radiated testing of the DUT; and a cap configured to mate to the receptacle to form a housing to enclose the DUT. The housing is for isolating the DUT at least one of physically or electromagnetically.

Terahertz (THz) or millimeter wave (mmW) band characterization of a differential-mode device under test (DUT) is performed using a non-contact probing setup based on an integrated circuit that includes the on-chip DUT and an on-chip test fixture as follows. A differential transmission line pair is operatively coupled with the DUT. A first differential antenna pair at a first end of the transmission line pair has a first antenna connected only with the first transmission line and a second antenna connected only with the second transmission line. A second differential antenna pair is likewise connected with a second end of the differential transmission line pair. A THz or mmW transmitter radiates a probe THz or mmW beam to the first differential antenna pair, and an electronic analyzer receives a THz or mmW signal radiated by the second differential antenna pair responsive to the radiation of the probe THz or mmW beam to the first differential antenna pair, thus enabling no-contact S-parameter measurements for characterizing differential-mode, on-wafer, active or passive devices and integrated circuits.

Terahertz (THz) or millimeter wave (mmW) band characterization of a differential-mode device under test (DUT) is performed using a non-contact probing setup based on an integrated circuit that includes the on-chip DUT and an on-chip test fixture as follows. A differential transmission line pair is operatively coupled with the DUT. A first differential antenna pair at a first end of the transmission line pair has a first antenna connected only with the first transmission line and a second antenna connected only with the second transmission line. A second differential antenna pair is likewise connected with a second end of the differential transmission line pair. A THz or mmW transmitter radiates a probe THz or mmW beam to the first differential antenna pair, and an electronic analyzer receives a THz or mmW signal radiated by the second differential antenna pair responsive to the radiation of the probe THz or mmW beam to the first differential antenna pair, thus enabling no-contact S-parameter measurements for characterizing differential-mode, on-wafer, active or passive devices and integrated circuits.

Digital testing is performed on an integrated circuit while radiation upsets are induced at locations of the integrated circuit. For each digital test, a determination is made as to whether there is a variation in the output of the digital test from an expected output of the digital test. If there is variation, a time of the variation is indicated. In one example, a location of a defect in the digital circuit can be determined from the times of the variations. In other embodiments, a mapping of the digital circuit can be made from the times.

There is provided an inspection system for inspecting a specimen, an inspection unit capable to operate in conjunction with an inspection machine unit, a die layout clipping unit, methods of inspecting a specimen, and a method of providing a die layout clip. The method of inspecting a specimen comprises: obtaining location information indicative of coordinates of a potential defect of interest revealed in the specimen and of one or more inspected layers corresponding to the potential defect of interest; sending to a die layout clipping unit a first data indicative of the location information and dimensions of an inspection area containing the potential defect of interest; receiving a die layout clip generated in accordance with the first data; specifying at least one inspection algorithm of the inspection area using information comprised in the die layout clip; and enabling inspection of the inspection area using the specified inspection algorithm.

A wireless test system includes a load board having an upper surface and a lower surface. The load board has a testing antenna disposed on the load board. A socket for receiving a device under test (DUT) having an antenna structure therein is disposed on the upper surface of the load board. The antenna structure is aligned with the testing antenna. The wireless test system further includes a handler for picking up and delivering the DUT to the socket. The handler has a clamp for holding and pressing the DUT. The clamp is grounded during testing and functions as a ground reflector that reflects and reverses radiation pattern of the DUT from an upward direction to a downward direction toward the testing antenna.

A wireless test system includes a load board having an upper surface and a lower surface. The load board has a testing antenna disposed on the load board. A socket for receiving a device under test (DUT) having an antenna structure therein is disposed on the upper surface of the load board. The antenna structure is aligned with the testing antenna. The wireless test system further includes a handler for picking up and delivering the DUT to the socket. The handler has a clamp for holding and pressing the DUT. The clamp is grounded during testing and functions as a ground reflector that reflects and reverses radiation pattern of the DUT from an upward direction to a downward direction toward the testing antenna.

A semiconductor device inspection apparatus is an apparatus for inspecting a semiconductor device which is an object to be inspected based on a result signal which is output in accordance with input of a test pattern signal to the semiconductor device, the apparatus including: an ultrasonic transducer, disposed to face the semiconductor device, which generates ultrasonic waves; a stage for moving a relative position of the semiconductor device and the ultrasonic transducer; a stimulation condition control unit for controlling a condition of stimulation by the ultrasonic waves applied to the semiconductor device; and an analysis unit for generating a measurement image based on the result signal which is output from the semiconductor device.

Neutron soft error rate derivation is calculated from data at the low energy neutron radiation. An outline value of an SEU cross-section function corresponding to a given neutron energy value is outputted. This outline value and the low energy neutron spectrum data are used to calculate an error count basic value of errors to occur over time. An error count actual measurement value over time is calculated from an error count during radiation of low energy neutrons and low energy neutron radiation time. The error count basic value and the error count actual measurement are used to calculate a proportionality coefficient of the SEU cross-section function. While holding a natural neutron spectrum, an error rate calculator outputs a neutron flux corresponding to a neutron energy value. The neutron soft error rate is calculated by an integration operation of multiplying the SEU cross-section function with the natural neuron spectrum.