In a first cross section along an electron ray that passes between an inner curved surface and an outer curved surface of a beam bender, the curvature of the surfaces are fixed, and the center of the curvature of the surfaces are set so as to match each other. In a second cross section perpendicular to the electron ray, the curvature of the surfaces are fixed, and the center of curvature of the surfaces are set so as to match each other. The radius of the curvature of the surface in the second cross section is set to be larger than that of the surface in the first cross section. The radius of curvature of the surface in the second cross section is set to be larger than that of the surface in the first cross section.

In a first cross section along an electron ray that passes between an inner curved surface and an outer curved surface of a beam bender, the curvature of the surfaces are fixed, and the center of the curvature of the surfaces are set so as to match each other. In a second cross section perpendicular to the electron ray, the curvature of the surfaces are fixed, and the center of curvature of the surfaces are set so as to match each other. The radius of the curvature of the surface in the second cross section is set to be larger than that of the surface in the first cross section. The radius of curvature of the surface in the second cross section is set to be larger than that of the surface in the first cross section.

A computer program product and a method for dissipation of an electrical charge stored in a region of an object. The method may include (a) sensing, by at least one sensor, an electrical charging status of the region of the object, while the object is located within a vacuum chamber and while a gaseous pressure within the vacuum chamber is below a certain vacuum pressure threshold; and (b) performing, based on the charging status of the given region, an electrical charge dissipation process that comprises increasing the gaseous pressure within the vacuum chamber to be within a given gaseous pressure range that facilitates a dissipation, by breakdown, of the electrical charge stored in the region of the object to the vacuum chamber.

A method and apparatus for separating real DVC via defects from nuisance based on Net Tracing Classification of eBeam VC die comparison inspection results are provided. Embodiments include performing an eBeam VC die comparison inspection on each via of a plurality of dies; determining DVC vias based on the comparison; performing a Net Tracing Classification on the DVC vias; determining S/D DVC vias based on the Net Tracing Classification; and performing a die repeater analysis on the S/D DVC vias to determine systematic design-related DVC via defects.

The invention relates to a method for detecting a measured value (d?/dx, M). According to the invention, provision is made for a sinusoidal excitation signal (Ue) with a predetermined excitation frequency (f), with or without a superposed DC component (Uoffset), to be fed to an input of a component (100, C), for at least one electron holography measuring step to be carried out, in which an electron beam (Se) is directed on the component (100, C), said electron-beam penetrating and/or passing the component (100, C) and subsequently being superposed with a reference electron-beam (Sr), and for an electrical hologram (EHG) arising by interference of the two electron beams (Se, Sr) during a predetermined measurement window (F) to be measured and the phase image (PB) to be ascertained therefrom, and for the measured value (M) to be formed on the basis of the phase image (PB), wherein the temporal length (Tf) of the measurement window (F) of the electron holography measuring step is shorter than half the period (T) of the sinusoidal excitation signal (Uc).

Provided is a sample inspection apparatus capable of identifying a capacitive fault or a potential faulty point where an electrical tolerance is low. The sample inspection apparatus includes: a charged particle optical system configured to irradiate a sample 19 with a charged particle beam; a first probe 21a configured to come into contact with the sample; an amplifier 23 having an input terminal to which the first probe is connected; and a phase detection unit 40 to which an output signal of the amplifier is input, in which an AC voltage is applied to the first probe, and the phase detection unit detects the output signal of the amplifier using a reference signal synchronized with the AC voltage and having the same frequency as the AC voltage.

Provided is a sample inspection apparatus capable of identifying a capacitive fault or a potential faulty point where an electrical tolerance is low. The sample inspection apparatus includes: a charged particle optical system configured to irradiate a sample 19 with a charged particle beam; a first probe 21a configured to come into contact with the sample; an amplifier 23 having an input terminal to which the first probe is connected; and a phase detection unit 40 to which an output signal of the amplifier is input, in which an AC voltage is applied to the first probe, and the phase detection unit detects the output signal of the amplifier using a reference signal synchronized with the AC voltage and having the same frequency as the AC voltage.

A probe assembly for analyzing a test device that includes a housing with an electron source disposed therein for emitting primary electrons. A photon source is positioned to emit photons that strike the electron source such that when the photons strike the electron source, the electron source emits the primary electrons. Detection circuitry is provided that is configured to detect secondary electrons emitted from a test device of a test assembly and to form an excitation waveform.

An object of the present invention relates to detecting a signal caused by a faulty point part of which the identification has been difficult with conventional EBAC. In an embodiment of the present invention, at least one probe is brought into contact with a sample on which a circuit is formed, the sample is scanned with a charged particle beam while power is supplied via the probe to the circuit identified by a contact of the probe, and a change in resistance value of a faulty point heated locally is measured via the probe. According to the present invention, even a signal caused by a high-resistance faulty point or a faulty point embedded in the sample can be easily detected.

An object of the present invention relates to detecting a signal caused by a faulty point part of which the identification has been difficult with conventional EBAC. In an embodiment of the present invention, at least one probe is brought into contact with a sample on which a circuit is formed, the sample is scanned with a charged particle beam while power is supplied via the probe to the circuit identified by a contact of the probe, and a change in resistance value of a faulty point heated locally is measured via the probe. According to the present invention, even a signal caused by a high-resistance faulty point or a faulty point embedded in the sample can be easily detected.