The present invention discloses an in-situ monitoring method and apparatus for a power electronic device explosion. A power electronic device is excited to produce an explosion failure by using a fault excitation module. An electrical signal of the power electronic device is monitored in real time by using an electrical signal monitoring module. Gas information of a test cavity is monitored in real time by using a gas monitoring module. External pictures of the power electronic device are captured by using a high-speed image capturing module. Internal pictures of the power electronic device are captured by using a high-speed X-ray imaging module. Each module in the apparatus is triggered to work according to a predetermined time sequence and time interval by using a time sequence control module. The entire apparatus is controlled and data is acquired, stored, and displayed by using a main control module.

The present invention discloses an in-situ monitoring method and apparatus for a power electronic device explosion. A power electronic device is excited to produce an explosion failure by using a fault excitation module. An electrical signal of the power electronic device is monitored in real time by using an electrical signal monitoring module. Gas information of a test cavity is monitored in real time by using a gas monitoring module. External pictures of the power electronic device are captured by using a high-speed image capturing module. Internal pictures of the power electronic device are captured by using a high-speed X-ray imaging module. Each module in the apparatus is triggered to work according to a predetermined time sequence and time interval by using a time sequence control module. The entire apparatus is controlled and data is acquired, stored, and displayed by using a main control module.

An electrical system includes a signal security detection system performing a method of determining a security of an interconnect. An interconnect extended between a first device and a second device. The interconnect has at least one conductive pathway aligned along a direction between the first device and the second device. A light source is configured to transmit a light through the interconnect and an optical detector is configured to receive the light passing through the interconnect. A processor records a first optical signature of the interconnect based on the light received at the optical detector at a first time, records a second optical signature of the interconnect based on the light received at the optical detector at a second time, and validates the second optical signature against the first optical signature to determine a security of the interconnect.

An electrical system includes a signal security detection system performing a method of determining a security of an interconnect. An interconnect extended between a first device and a second device. The interconnect has at least one conductive pathway aligned along a direction between the first device and the second device. A light source is configured to transmit a light through the interconnect and an optical detector is configured to receive the light passing through the interconnect. A processor records a first optical signature of the interconnect based on the light received at the optical detector at a first time, records a second optical signature of the interconnect based on the light received at the optical detector at a second time, and validates the second optical signature against the first optical signature to determine a security of the interconnect.

Systems and methods for improving substrate fabrication are provided. Subsets of dies of substrates may be inspected at various points in the fabrication process to generate spectra data. The spectra data can be used to generate data that are input to a machine learning model to predict yields for the substrates.

The present disclosure relates to a steady-state microwave conductivity method that includes modulating a light beam to form an amplitude modulated light having a modulation frequency ω.sub.1, producing a microwave waveform, exposing a sample to the amplitude modulated light and a first portion of the microwave waveform to produce an amplitude modulation signal on the first portion of the microwave waveform, and mixing a second portion of the microwave waveform and the amplitude modulation signal to produce a first signal and a second signal.

A semiconductor inspecting method according to an embodiment includes a step of scanning a semiconductor device with laser light to acquire characteristic information indicative of characteristics of an electrical signal of the semiconductor device in response to irradiation with the laser light for each of irradiation positions of the laser light and to generate a first pattern image of the semiconductor device based on characteristic information for each of irradiation positions, a step of generating a second pattern image of the semiconductor device based on a layout image of the semiconductor device and current path information indicative of a current path in the semiconductor device, and a step of acquiring matching information indicative of a relative relationship between the first pattern image and the layout image based on a result of positional alignment between the first pattern image and the second pattern image.

A semiconductor inspecting method according to an embodiment includes a step of scanning a semiconductor device with laser light to acquire characteristic information indicative of characteristics of an electrical signal of the semiconductor device in response to irradiation with the laser light for each of irradiation positions of the laser light and to generate a first pattern image of the semiconductor device based on characteristic information for each of irradiation positions, a step of generating a second pattern image of the semiconductor device based on a layout image of the semiconductor device and current path information indicative of a current path in the semiconductor device, and a step of acquiring matching information indicative of a relative relationship between the first pattern image and the layout image based on a result of positional alignment between the first pattern image and the second pattern image.

An electro-optical sensor comprises an optical input configured to receive an optical carrier via an upstream fiber. The electro-optical sensor also includes an optical modulator configured to modulate an electrical signal onto the optical carrier to create an optical signal. The electro-optical sensor further includes an optical output configured to transmit the optical signal via a downstream fiber. The electro-optical sensor employs a variation output configured to transmit variation data indicating variation in the received optical carrier to support compensation for corresponding variation in the optical signal.

A semiconductor inspection device includes: a measuring device that supplies power to a semiconductor device and measures the electrical characteristics; an optical scanning device that scans the semiconductor device with light intensity-modulated with a plurality of frequencies; a lock-in amplifier that acquires a characteristic signal indicating the electrical characteristics of the plurality of frequency components; and an inspection device that calculates a frequency at which the characteristic signal reflecting the electrical characteristics of a first layer and the characteristic signal reflecting the electrical characteristics of a second layer have a predetermined phase difference, corrects a phase component of the characteristic signal at an arbitrary scanning position with a phase component at the scanning position reflecting the electrical characteristics of the first layer as a reference, and outputs an in-phase component and a quadrature component at the arbitrary scanning position at the calculated frequency.