Techniques and systems are described that enable multiplexed DLTS and HSCV measurements.

A measuring container for measurement of impurity ions in a liquid includes: a first electrode; a first insulation film formed on the first electrode; a second insulation film formed apart from the first insulation film to create a space into which the liquid is to be sealed; a second electrode on which the second insulation film is formed, the second electrode being arranged to face the first electrode; and a seal material having an inlet through which the liquid is injected into the space, the seal material being configured to seal the space.

A measuring container for measurement of impurity ions in a liquid includes: a first electrode; a first insulation film formed on the first electrode; a second insulation film formed apart from the first insulation film to create a space into which the liquid is to be sealed; a second electrode on which the second insulation film is formed, the second electrode being arranged to face the first electrode; and a seal material having an inlet through which the liquid is injected into the space, the seal material being configured to seal the space.

Methods of characterizing semiconductor doping in a wide bandgap semiconductor sample include: measuring an initial value, V.sub.0, of a surface voltage at a region of a surface of the semiconductor sample in the dark; charging the region to deep depletion in the dark by depositing a prescribed corona charge at the region; measuring the surface voltage value in the dark at the region after charging; illuminating the charged region with light of a specific photon flux, ?.sub.eff, having a photon energy above the semiconductor bandgap sufficient to generate free minority carriers in the semiconductor sample causing photoneutralization of the corona charge; monitoring of a photoneutralization induced corona charge decay at the region vs. illumination time, t, using a noncontact time resolved measurement of surface voltage, V(t); analyzing the monitored time resolved surface voltage decay data V(t) to determine a photoneutralization time constant, ?.sub.ph; and using the photoneutralization time constant, ?.sub.ph at a specific photon flux, ?.sub.eff, as a semiconductor doping index and characterizing a semiconductor doping concentration at the region based on its value.

Methods of characterizing semiconductor doping in a wide bandgap semiconductor sample include: measuring an initial value, V.sub.0, of a surface voltage at a region of a surface of the semiconductor sample in the dark; charging the region to deep depletion in the dark by depositing a prescribed corona charge at the region; measuring the surface voltage value in the dark at the region after charging; illuminating the charged region with light of a specific photon flux, ?.sub.eff, having a photon energy above the semiconductor bandgap sufficient to generate free minority carriers in the semiconductor sample causing photoneutralization of the corona charge; monitoring of a photoneutralization induced corona charge decay at the region vs. illumination time, t, using a noncontact time resolved measurement of surface voltage, V(t); analyzing the monitored time resolved surface voltage decay data V(t) to determine a photoneutralization time constant, ?.sub.ph; and using the photoneutralization time constant, ?.sub.ph at a specific photon flux, ?.sub.eff, as a semiconductor doping index and characterizing a semiconductor doping concentration at the region based on its value.

Embodiments relate to functional test methods useful for fabricating products containing Light Emitting Diode (LED) structures. In particular, LED arrays are functionally tested by injecting current via a displacement current coupling device using a field plate comprising of an electrode and insulator placed in close proximity to the LED array. A controlled voltage waveform is then applied to the field plate electrode to excite the LED devices in parallel for high-throughput. A camera records the individual light emission resulting from the electrical excitation to yield a function test of a plurality of LED devices. Changing the voltage conditions can excite the LEDs at differing current density levels to functionally measure external quantum efficiency and other important device functional parameters. Spectral filtering is used to improve measurement contrast and LED defect detection. External light irradiation is used to excite the LED array and improve onset of charge injection light emission and throughput.

A short circuit testing method for a capacitive sensing device including a plurality of sense lines and a plurality of drive lines includes: under a short circuit testing mode, coupling at least one first line in the sense lines and drive lines to a reference level; using a sensing circuit corresponding to a specific sense line to read out a testing resultant signal; and, comparing the testing resultant signal with a reference signal to determine whether a short circuit exists.

Methods of characterizing semiconductor doping in a wide bandgap semiconductor sample include: measuring an initial value, V.sub.0, of a surface voltage at a region of a surface of the semiconductor sample in the dark; charging the region to deep depletion in the dark by depositing a prescribed corona charge at the region; measuring the surface voltage value in the dark at the region after charging; illuminating the charged region with light of a specific photon flux, ?.sub.eff, having a photon energy above the semiconductor bandgap sufficient to generate free minority carriers in the semiconductor sample causing photoneutralization of the corona charge; monitoring of a photoneutralization induced corona charge decay at the region vs. illumination time, t, using a noncontact time resolved measurement of surface voltage, V(t); analyzing the monitored time resolved surface voltage decay data V(t) to determine values for a parameter characteristic of a photoneutralization induced corona charge decay at the regions; and using the parameter at a specific photon flux, ?.sub.eff, to characterize the property of the semiconductor at the region based on the values of the parameter.

Methods of characterizing semiconductor doping in a wide bandgap semiconductor sample include: measuring an initial value, V.sub.0, of a surface voltage at a region of a surface of the semiconductor sample in the dark; charging the region to deep depletion in the dark by depositing a prescribed corona charge at the region; measuring the surface voltage value in the dark at the region after charging; illuminating the charged region with light of a specific photon flux, ?.sub.eff, having a photon energy above the semiconductor bandgap sufficient to generate free minority carriers in the semiconductor sample causing photoneutralization of the corona charge; monitoring of a photoneutralization induced corona charge decay at the region vs. illumination time, t, using a noncontact time resolved measurement of surface voltage, V(t); analyzing the monitored time resolved surface voltage decay data V(t) to determine values for a parameter characteristic of a photoneutralization induced corona charge decay at the regions; and using the parameter at a specific photon flux, ?.sub.eff, to characterize the property of the semiconductor at the region based on the values of the parameter.

Embodiments relate to functional test methods useful for fabricating products containing Light Emitting Diode (LED) structures. In particular, LED arrays are functionally tested by injecting current via a displacement current coupling device using a field plate comprising of an electrode and insulator placed in close proximity to the LED array. A controlled voltage waveform is then applied to the field plate electrode to excite the LED devices in parallel for high-throughput. A camera records the individual light emission resulting from the electrical excitation to yield a function test of a plurality of LED devices. Changing the voltage conditions can excite the LEDs at differing current density levels to functionally measure external quantum efficiency and other important device functional parameters.