A ground fault detection system based on capacitive sensing suitable for use in detecting a ground fault condition in electronic equipment (such as a PCBA) with a circuit ground electrically isolated from an isolation ground (such as chassis ground). The capacitive sensing system includes a capacitive sensor capacitively coupled to the system isolation ground, and a capacitance/data converter that captures sensor capacitance measurements for conversion to sensor data representative of a ground short. In one embodiment, the capacitive sensor includes a sensor electrode capacitively coupled to the system isolation ground by one of projected capacitance and a floating capacitor (such as 33 pf), and the CDC unit further includes sensor excitation circuitry configured to drive the sensor electrode, such that a sensor capacitance (projected or floating capacitance) is representative of an electrical condition of the system isolation ground. For sensing by projected capacitance, the capacitive sensor can include a driven shield.

A ground fault detection system based on capacitive sensing suitable for use in detecting a ground fault condition in electronic equipment (such as a PCBA) with a circuit ground electrically isolated from an isolation ground (such as chassis ground). The capacitive sensing system includes a capacitive sensor capacitively coupled to the system isolation ground, and a capacitance/data converter that captures sensor capacitance measurements for conversion to sensor data representative of a ground short. In one embodiment, the capacitive sensor includes a sensor electrode capacitively coupled to the system isolation ground by one of projected capacitance and a floating capacitor (such as 33 pf), and the CDC unit further includes sensor excitation circuitry configured to drive the sensor electrode, such that a sensor capacitance (projected or floating capacitance) is representative of an electrical condition of the system isolation ground. For sensing by projected capacitance, the capacitive sensor can include a driven shield.

Methods of characterizing semiconductor doping in a wide bandgap semiconductor sample include: measuring an initial value, V.sub.0, of a surface voltage at a region of a surface of the semiconductor sample in the dark; charging the region to deep depletion in the dark by depositing a prescribed corona charge at the region; measuring the surface voltage value in the dark at the region after charging; illuminating the charged region with light of a specific photon flux, f.sub.eff, having a photon energy above the semiconductor bandgap sufficient to generate free minority carriers in the semiconductor sample causing photoneutralization of the corona charge; monitoring of a photoneutralization induced corona charge decay at the region vs. illumination time, t, using a noncontact time resolved measurement of surface voltage, V(t); analyzing the monitored time resolved surface voltage decay data V(t) to determine values for a parameter characteristic of a photoneutralization induced corona charge decay at the regions; and using the parameter at a specific photon flux, .sub.eff, to characterize the property of the semiconductor at the region based on the values of the parameter.

Methods of characterizing semiconductor doping in a wide bandgap semiconductor sample include: measuring an initial value, V.sub.0, of a surface voltage at a region of a surface of the semiconductor sample in the dark; charging the region to deep depletion in the dark by depositing a prescribed corona charge at the region; measuring the surface voltage value in the dark at the region after charging; illuminating the charged region with light of a specific photon flux, f.sub.eff, having a photon energy above the semiconductor bandgap sufficient to generate free minority carriers in the semiconductor sample causing photoneutralization of the corona charge; monitoring of a photoneutralization induced corona charge decay at the region vs. illumination time, t, using a noncontact time resolved measurement of surface voltage, V(t); analyzing the monitored time resolved surface voltage decay data V(t) to determine values for a parameter characteristic of a photoneutralization induced corona charge decay at the regions; and using the parameter at a specific photon flux, .sub.eff, to characterize the property of the semiconductor at the region based on the values of the parameter.

Arrangements and techniques for testing mobile devices within a test module. The test modules are portable and may be stacked to provide a modular testing system. A pulley system may be used to move an actuator arm horizontally in the X and Y directions. The actuator arm may be moved vertically in the Z direction such that a tip may engage a touchscreen of a mobile device being tested or a user interface element of the mobile device.

Arrangements and techniques for testing mobile devices within a test module. The test modules are portable and may be stacked to provide a modular testing system. A pulley system may be used to move an actuator arm horizontally in the X and Y directions. The actuator arm may be moved vertically in the Z direction such that a tip may engage a touchscreen of a mobile device being tested or a user interface element of the mobile device.

An integrated circuit die has one or more through-body-vias and a testing circuit on board the die which tests for defects in a through-body-via by driving of pulses of current into a node. Pulses are counted until the voltage of the node reaches a threshold voltage to provide a pulse count which is a function of the capacitance of the node. A determination is made as to whether the through-body-via of the node has a defect as a function of the pulse count.

An integrated circuit die has one or more through-body-vias and a testing circuit on board the die which tests for defects in a through-body-via by driving of pulses of current into a node. Pulses are counted until the voltage of the node reaches a threshold voltage to provide a pulse count which is a function of the capacitance of the node. A determination is made as to whether the through-body-via of the node has a defect as a function of the pulse count.

A device and method to test microelectronic parts to determine whether the parts are compromised by active illumination in a testing fixture by analysis of emission metrics.

A device and method to test microelectronic parts to determine whether the parts are compromised by active illumination in a testing fixture by analysis of emission metrics.