Methods for selecting integrated circuit dies based on pre-determined criteria are disclosed. A disclosed method includes binning tools that characterizes multiple integrated circuit dies based on performance attributes. Each integrated circuit die is labeled with an identifier that represents bin location of the integrated circuit die within a die storage structure. A user can search for integrated circuit dies that matches certain performance grading by providing a performance description to an input interface on testing equipment. A tester is then configured to perform a screening to identify the physical locations of integrated circuit dies that match the retrieved identifiers from the die storage structure.

A method for analyzing device test data includes accessing a core analytics rule that is based on manufacturing data of a plurality of devices. Each of the plurality of devices are produced in one of a plurality of manufacturing facilities and are of a same type as a first device being tested on a tester. The method also includes receiving initial test results of a plurality of other devices of a same type tested at a testing facility, generating, based on the initial test results, an edge analytics rule, modifying the core analytics rule based on the edge analytics rule, wherein the modified core analytics rule including modified binning limits, applying the modified core analytics rule to testing data obtained by testing the first device, and determining, based on applying the modified core analytics rule, that the first device is an outlier with respect to the modified binning limits.

Embodiments of the present invention, which relate to the field of electronic technologies, provide a monitoring method, a monitoring apparatus, and an electronic device, which can accurately locate an error point in MPI information delivered by a system chip. The apparatus may include: an address filter, a read/write controller connected to the address filter, and a memory connected to the read/write controller, where the address filter is configured to acquire multiple pieces of MPI information, and obtain, by filtering the multiple pieces of MPI information, first MPI information corresponding to a first service that is preset; the read/write controller is configured to write, into the memory according to a time sequence of receiving the first MPI information, the first MPI information that is obtained by the address filter by filtering; and the memory is configured to store the first MPI information written by the read/write controller.

Systems and methods for optimizing timing/power risk SVB using a customer-supplied, non-linear voltage slope. Chips are manufactured according to an integrated circuit design. The minimum operating voltage and hardware variations for each device in the design is determined and a process distribution for the chips is divided into process windows. Vmax and Vmin to support system frequency are determined for each process window. Vmin vs. process-bin mean and sigma sensitivity is calculated using information about specific devices. The voltage for each process window that generates Vmin for specific devices is identified. Power at the slow end and fast end of each process window is evaluated using the voltage to support system frequency. Pmax is determined. Vmax for each process window that generates Pmax is determined. A voltage is identified between Vmin and Vmax that maximizes the timing margin for system frequency while minimizing risk for Pmax. The chips are sorted into different process windows, based on the voltage identified.

Integrated circuits (12) are manufactured by printing an array of circuit elements CE each containing an integrated circuit and associated testing circuitry (14). A plurality of integrated circuits within the array are tested in parallel to generate a corresponding plurality of individual test result signals. These individual test result signals are combined to form a combined test result signal indicating whether any of the plurality of integrated circuits tested in parallel operated incorrectly during their testing. If the combined test result signal indicates any faulty integrated circuits, then the entire plurality of integrated circuits (e.g. an entire row or column) may be discarded. The array of tested integrated circuits are then separated into discrete integrated circuits and are also separated from their testing circuit. Contacts (16, 18, 20) providing power signals, clock signals, and the reading of the combined test result signals are located at the periphery of a substrate sheet onto which the array of circuit elements are printed.

The disclosure provides a method and apparatus of interleaved on-chip testing. The method merges a test setup for analog components with a test setup for digital components and then interleaves the execution of the digital components with the analog components. This provides concurrency via a unified mode of operation. The apparatus includes a system-on-chip test access port (SoC TAP) in communication with a memory test access port (MTAP). A built-in self-test (BIST) controller communicates with the MTAP, a physical layer, and a memory. A multiplexer is in communication with the memory and a phase locked loop (PLL) through an AND gate.

Systems and methods for sorting an electronic device undergoing a final test operation in accordance with a test program, into one of a plurality of bins. In one embodiment, an evaluator defines the binning of the electronic device while the device is still socketed, and the defined binning may or may not concur with the binning assigned by the test program.

Methods and structures for leakage screening are disclosed. A method includes sorting devices manufactured from the same device design into voltage bins corresponding to a respective supply voltage. The method further includes determining a respective total power of each of the voltage bins. The method further includes determining a respective uplift power of the voltage bins. The method further includes determining a respective first leakage screen value for each of the voltage bins based on the respective uplift power of each of the voltage bins.

In a method of analyzing a semiconductor device, output values of semiconductor devices are measured, population data including the output values in connection with values of design attributes of the semiconductor devices is determined, outlier output values are extracted from among the output values included in the population data to determine discriminated data, and a weak value of a weak design attribute, which causes the outlier output values, is determined based on a difference between a ratio of a number of outlier output values, which are related with respective values of the design attributes, to a total number of the outlier output values included in the discriminated data, and a ratio of a number of output values, which are related with respective values of the design attributes, to a total number of the output values included in the population data.

Disclosed is a method wherein selective voltage binning and leakage power screening of integrated circuit (IC) chips are performed. Additionally, pre-test power-optimized bin reassignments are made on a chip-by-chip basis. Specifically, a leakage power measurement of an IC chip selected from a voltage bin can is compared to a bin-specific leakage power screen value of the next slower voltage bin. If the leakage power measurement is higher, the IC chip will be left in the voltage bin to which it is currently assigned. If the leakage power measurement is lower, the IC chip will be reassigned to that next slower voltage bin. These processes can be iteratively repeated until no slower voltage bins are available or the IC chip cannot be reassigned. IC chips can subsequently be tested according to testing parameters, including the minimum test voltages, associated with the voltage bins to which they are finally assigned.