A semiconductor device comprises a plurality of memory elements, test control circuitry, and a testing interface. The test control circuitry is configure to determine that one or more clock signals associated with the memory elements have been stopped and generate a scan clock signal based on the determination that the one or more clock signals have been stopped. The test control circuitry is further configured to communicate the scan clock signal to the memory elements. The testing interface is configured to communicate test data from the memory elements. In one example, the test data is delimited with start and end marker elements. The semiconductor device is mounted to a circuit board and is communicatively coupled to communication pins of the circuit board.

A semiconductor device comprises a plurality of memory elements, test control circuitry, and a testing interface. The test control circuitry is configure to determine that one or more clock signals associated with the memory elements have been stopped and generate a scan clock signal based on the determination that the one or more clock signals have been stopped. The test control circuitry is further configured to communicate the scan clock signal to the memory elements. The testing interface is configured to communicate test data from the memory elements. In one example, the test data is delimited with start and end marker elements. The semiconductor device is mounted to a circuit board and is communicatively coupled to communication pins of the circuit board.

A non-transitory computer-readable storage medium stores instructions, which when executed by a processing device of a diagnostic server, cause the processing device to perform certain operations. The operations include receiving, from a processing chamber, (i) measurement values of a combined signal that is based on an injection of an alternating signal wave onto a first output signal of a controller of the processing chamber, and (ii) measurement values of a second output signal of the controller that incorporates feedback from the processing chamber. The operations further include generating, based on the measurement values of the combined signal and the measurement values of the second output signal of the controller, a baseline bode fingerprint pertaining to a state associated with the processing chamber. The operations further include storing, in computer storage, the baseline bode fingerprint to be used in performing diagnostics of the processing chamber.

A non-transitory computer-readable storage medium stores instructions, which when executed by a processing device of a diagnostic server, cause the processing device to perform certain operations. The operations include receiving, from a processing chamber, (i) measurement values of a combined signal that is based on an injection of an alternating signal wave onto a first output signal of a controller of the processing chamber, and (ii) measurement values of a second output signal of the controller that incorporates feedback from the processing chamber. The operations further include generating, based on the measurement values of the combined signal and the measurement values of the second output signal of the controller, a baseline bode fingerprint pertaining to a state associated with the processing chamber. The operations further include storing, in computer storage, the baseline bode fingerprint to be used in performing diagnostics of the processing chamber.

An automated test equipment comprises a tester control configured to broadcast and/or specific upload to matching module input data and/or device-specific data including keys and/or credentials and/or IDs and/or configuration information. The automated test equipment further comprises a channel processing unit configured to transform input data using device specific data in order to obtain device-under-test adapted data for testing the device under test. The channel processing unit further configured to process the DUT data using device specific data in order to evaluate the DUT data. A method and a computer program for testing one or more devices under test in an automated test equipment are also disclosed.

In various examples, a test system is provided for executing built-in-self-test (BIST) on integrated circuits deployed in the field. The integrated circuits may include a first device and a second device, the first device having direct access to external memory, which stores test data, and the second device having indirect access to the external memory by way of the first device. In addition to providing a mechanism to permit the first device and the second device to run test concurrently, the hardware and software may reduce memory requirements and runtime associated with running the test sequences, thereby making real-time BIST possible in deployment. Furthermore, some embodiments permit a single external memory image to cater to different SKU configurations.

In various examples, a test system is provided for executing built-in-self-test (BIST) on integrated circuits deployed in the field. The integrated circuits may include a first device and a second device, the first device having direct access to external memory, which stores test data, and the second device having indirect access to the external memory by way of the first device. In addition to providing a mechanism to permit the first device and the second device to run test concurrently, the hardware and software may reduce memory requirements and runtime associated with running the test sequences, thereby making real-time BIST possible in deployment. Furthermore, some embodiments permit a single external memory image to cater to different SKU configurations.

Embodiments of the invention provide for integrated circuits for testing one or more transistors for process variation effects. According to an embodiment, the integrated circuit can include: a plurality of ring oscillator macro circuits, wherein each ring oscillator macro circuit includes two ring oscillators, a first multiplexer, and a first divide-by-two circuit; a multiplexer stage; a divide-by-two circuit stage; a second multiplexer; a second divide-by-two circuit; and frequency measurement circuit. According to another embodiment, the integrated circuit can include: a first shift register including a plurality of devices-under-test; a second shift register including a plurality of static latches; a first multiplexer configured to receive outputs from each of the plurality of DUTs; a second multiplexer configured to receive outputs from each of the plurality of static latches; and a comparator configured to compare an output from the first multiplexer with an output from the second multiplexer.

Embodiments of the invention provide for integrated circuits for testing one or more transistors for process variation effects. According to an embodiment, the integrated circuit can include: a plurality of ring oscillator macro circuits, wherein each ring oscillator macro circuit includes two ring oscillators, a first multiplexer, and a first divide-by-two circuit; a multiplexer stage; a divide-by-two circuit stage; a second multiplexer; a second divide-by-two circuit; and frequency measurement circuit. According to another embodiment, the integrated circuit can include: a first shift register including a plurality of devices-under-test; a second shift register including a plurality of static latches; a first multiplexer configured to receive outputs from each of the plurality of DUTs; a second multiplexer configured to receive outputs from each of the plurality of static latches; and a comparator configured to compare an output from the first multiplexer with an output from the second multiplexer.

The present disclosure provides memory devices and methods for using shared latch elements thereof. A memory device includes a substrate, an interposer disposed over the substrate, and a logic die and stacked memory dies disposed over the interposer. In the logic die, the test generation module performs a memory test operation for the memory device. The functional elements stores functional data in latch elements during a functional mode of the memory device. The repair analysis module determines memory test/repair data based on the memory test operation. The memory test/repair data comprises memory addresses of faulty memory storage locations of the memory device that are identified during the memory test operation. The repair analysis module configures the latch elements into a scan chain, accesses the memory test/repair data during the test mode of the memory device, and repairs the memory device using the memory test/repair data.