A test arrangement for adjusting a setup of testing a device under test (DUT) includes a main device that generates an RF signal and processes an incoming RF signal in a first frequency range; a frontend component generates an RF signal and processes an incoming RF signal in a second frequency range. The frontend component measures a signal level in a sub-range within the first frequency range; a connection cable connects the main device with the frontend component; and an analyzer predicts a behavior of the connection cable in a rest portion of the first frequency range that is different from the sub-range within the first frequency range.

Test stimulus signals applied to at least one circuit under test are produced in a set of test stimulus generators as a function of test stimulus information loaded in test stimulus registers. Loading of the test stimulus information in the test stimulus registers is controlled as a function of test programming information loaded via a programming interface in a respective control register in a set of control registers. The test stimulus generators are activated as a function of the test programming information loaded in said control registers. Test outcome signals received from the at least one circuit under test are used to produce signature comparison signals, which are compared with respective programmable signature reference signals stored in a set of input signature registers, are produced in response to the signature comparison signals produced from the test outcome signals failing to match with the respective reference signals.

A circuit chip is connected to a sensor chip in a sub-unit via a communication terminal, and includes an output wave formation circuit that performs communication by controlling a voltage of a power supply supplied from an electronic control unit (ECU) to raise a voltage level of an output signal. When the voltage of the power supply monitored by a voltage monitor rises above a threshold value, a control circuit lowers a voltage of a signal from the output wave formation circuit, thereby preventing an excessive rise of the power supply voltage used in a signal communication.

A circuit chip is connected to a sensor chip in a sub-unit via a communication terminal, and includes an output wave formation circuit that performs communication by controlling a voltage of a power supply supplied from an electronic control unit (ECU) to raise a voltage level of an output signal. When the voltage of the power supply monitored by a voltage monitor rises above a threshold value, a control circuit lowers a voltage of a signal from the output wave formation circuit, thereby preventing an excessive rise of the power supply voltage used in a signal communication.

The present invention relates to a self-diagnostic apparatus capable of improving safety of a device under test (DUT) by analyzing a characteristic change of a DUT, such as a semiconductor, a circuit module, or a system, in a safe operating region over time and allowing a regular test and a periodic test to be performed even while the DUT is running.

The present invention relates to a self-diagnostic apparatus capable of improving safety of a device under test (DUT) by analyzing a characteristic change of a DUT, such as a semiconductor, a circuit module, or a system, in a safe operating region over time and allowing a regular test and a periodic test to be performed even while the DUT is running.

An integrated circuit device includes a plurality of cells or modules. Each respective one of the cells or modules consumes leakage power, and the amount of leakage power consumed by a respective one of the cells or modules varies depending on states of its inputs. Scan-chain circuitry is configured to propagate through the integrated circuit device, on entry of the integrated circuit device to a low-power mode, a scan-chain pattern created in advance, to apply, to each respective cell or module in the low-power mode, a set of inputs that results in a respective low-power state with reduced leakage power. Creating the scan chain pattern includes identifying respective ones of the cells or modules as having the highest leakage power consumption, and a respective combination of inputs to place each of those the cells or modules in a respective low-power state.

An integrated circuit device includes a plurality of cells or modules. Each respective one of the cells or modules consumes leakage power, and the amount of leakage power consumed by a respective one of the cells or modules varies depending on states of its inputs. Scan-chain circuitry is configured to propagate through the integrated circuit device, on entry of the integrated circuit device to a low-power mode, a scan-chain pattern created in advance, to apply, to each respective cell or module in the low-power mode, a set of inputs that results in a respective low-power state with reduced leakage power. Creating the scan chain pattern includes identifying respective ones of the cells or modules as having the highest leakage power consumption, and a respective combination of inputs to place each of those the cells or modules in a respective low-power state.

Technology is disclosed herein for testing circuitry that controls memory operations in a memory structure having non-volatile memory cells. The testing of the circuitry can be performed without the memory structure. The memory structure may reside on one semiconductor die, with sense blocks and a control circuit on another semiconductor die. The control circuit is able to perform die level control of memory operations in the memory structure. The control circuit may control the sense blocks to simulate sensing of non-volatile memory cells in the memory structure even though the sense blocks are not connected to the memory structure. The control circuit verifies correct operation of the semiconductor die based on the simulated sensing. For example, the control circuit may verify correct operation of a state machine that controls sense operations at a die level. Thus, the operation of the semiconductor die may be tested without the memory structure.

Technology is disclosed herein for testing circuitry that controls memory operations in a memory structure having non-volatile memory cells. The testing of the circuitry can be performed without the memory structure. The memory structure may reside on one semiconductor die, with sense blocks and a control circuit on another semiconductor die. The control circuit is able to perform die level control of memory operations in the memory structure. The control circuit may control the sense blocks to simulate sensing of non-volatile memory cells in the memory structure even though the sense blocks are not connected to the memory structure. The control circuit verifies correct operation of the semiconductor die based on the simulated sensing. For example, the control circuit may verify correct operation of a state machine that controls sense operations at a die level. Thus, the operation of the semiconductor die may be tested without the memory structure.