The present invention relates to a sensor device which has high S/N and excellent temperature characteristics. A sensor device has a semiconductor substrate, a first metal wiring layer provided on the semiconductor substrate, a first insulating layer provided on the first metal wiring layer, a compound semiconductor sensor element provided on the first insulating layer, a second metal wiring layer provided on the compound semiconductor sensor element and the first insulating layer, and a second insulating layer provided on the second metal wiring layer. A third insulating layer is provided between the first metal wiring layer and the second metal wiring layer, and the compound semiconductor sensor element is provided in the third insulating layer.

The present teaching relates to a magnetic sensor comprising an input port to be connected to an external power supply, a magnetic field detecting circuit configured to generate a magnet detection signal, an output control circuit configured to control operation of the magnetic sensor in response to the magnet detection signal, and an output port. The magnetic field detecting circuit includes a magnetic sensing element configured to detect an external magnetic field and output a detection signal, a signal processing element configured to amplify the detection signal and removing interference from the detection signal to generate processed detection signal, and an analog-digital conversion element configured to convert the processed detection signal into a magnet detection signal, and the output control circuit is configured to control the magnetic sensor to operate in at least one of a first state and a second state responsive to at least the magnet detection signal.

The present teaching relates to a magnetic sensor comprising an input port to be connected to an external power supply, a magnetic field detecting circuit configured to generate a magnet detection signal, an output control circuit configured to control operation of the magnetic sensor in response to the magnet detection signal, and an output port. The magnetic field detecting circuit includes a magnetic sensing element configured to detect an external magnetic field and output a detection signal, a signal processing element configured to amplify the detection signal and removing interference from the detection signal to generate processed detection signal, and an analog-digital conversion element configured to convert the processed detection signal into a magnet detection signal, and the output control circuit is configured to control the magnetic sensor to operate in at least one of a first state and a second state responsive to at least the magnet detection signal.

A control device includes a moving portion, a magnetic element coupled to the moving portion, at least one magnetic sensing circuit responsive to magnetic fields, and at least one magnetic flux pipe structure. The magnetic element may comprise alternating positive and negative sections configured to generate a magnetic field. The magnetic element may be any shape, such as circular, linear, etc. The magnetic sensing circuit may be radially offset from the magnetic element, and the magnetic flux pipe structure may be configured to conduct the magnetic field generated by the magnetic element towards the magnetic sensing circuit. The magnetic element may generate the magnetic field in a first plane, and the magnetic sensing may be responsive to magnetic fields in a second direction that is angularly offset from the first plane. The magnetic flux pipe structure may redirect the magnetic field towards the magnetic sensing circuit in the second direction.

A control device includes a moving portion, a magnetic element coupled to the moving portion, at least one magnetic sensing circuit responsive to magnetic fields, and at least one magnetic flux pipe structure. The magnetic element may comprise alternating positive and negative sections configured to generate a magnetic field. The magnetic element may be any shape, such as circular, linear, etc. The magnetic sensing circuit may be radially offset from the magnetic element, and the magnetic flux pipe structure may be configured to conduct the magnetic field generated by the magnetic element towards the magnetic sensing circuit. The magnetic element may generate the magnetic field in a first plane, and the magnetic sensing may be responsive to magnetic fields in a second direction that is angularly offset from the first plane. The magnetic flux pipe structure may redirect the magnetic field towards the magnetic sensing circuit in the second direction.

A magnetic field sensor comprises at least one magnetic field sensing element configured to generate a measured magnetic field signal responsive to an external magnetic field; a diagnostic circuit configured to generate a diagnostic signal, wherein the diagnostic signal is not dependent on a measured magnetic field; a signal path comprising an amplifier and an analog-to-digital converter for processing the measured magnetic field signal to generate a sensor output signal indicative of the external magnetic field during a measured time period and for processing the diagnostic signal during a diagnostic time period; and a switch coupled to receive the measured magnetic field signal and the diagnostic signal and direct the measured magnetic field signal to the signal path during the measured time period and direct the diagnostic signal to the signal path during the diagnostic time period.

A magnetic field sensor comprises at least one magnetic field sensing element configured to generate a measured magnetic field signal responsive to an external magnetic field; a diagnostic circuit configured to generate a diagnostic signal, wherein the diagnostic signal is not dependent on a measured magnetic field; a signal path comprising an amplifier and an analog-to-digital converter for processing the measured magnetic field signal to generate a sensor output signal indicative of the external magnetic field during a measured time period and for processing the diagnostic signal during a diagnostic time period; and a switch coupled to receive the measured magnetic field signal and the diagnostic signal and direct the measured magnetic field signal to the signal path during the measured time period and direct the diagnostic signal to the signal path during the diagnostic time period.

A sensor device comprising: a lead frame; a first/second semiconductor die having a first/second sensor structure at a first/second sensor location, and a plurality of first/second bond pads electrically connected to the lead frame; the semiconductor dies having a square or rectangular shape with a geometric center; the sensor locations are offset from the geometrical centers; the second die is stacked on top of the first die, and is rotated by a non-zero angle and optionally also offset or shifted with respect to the first die, such that a perpendicular projection of the first and second sensor location coincide.

A sensor device comprising: a lead frame; a first/second semiconductor die having a first/second sensor structure at a first/second sensor location, and a plurality of first/second bond pads electrically connected to the lead frame; the semiconductor dies having a square or rectangular shape with a geometric center; the sensor locations are offset from the geometrical centers; the second die is stacked on top of the first die, and is rotated by a non-zero angle and optionally also offset or shifted with respect to the first die, such that a perpendicular projection of the first and second sensor location coincide.

A sensor cross-talk compensation system includes a semiconductor substrate having a first main surface and a second main surface opposite to the first main surface; a vertical Hall sensor element disposed in the semiconductor substrate, the vertical Hall sensor element is configured to generate a sensor signal in response to a magnetic field impinging thereon; and an asymmetry detector configured to detect an asymmetric characteristic of the vertical Hall sensor element. The asymmetry detector includes a detector main region that vertically extends into the semiconductor substrate from the first main surface towards the second main surface and is of a conductivity type having a first doping concentration; and at least three detector contacts disposed in the detector main region at the first main surface, the at least three detector contacts are ohmic contacts of the conductivity type having a second doping concentration that is higher than the first doping concentration.