Aspects of the present disclosure provide a power activation module for powering one or more wearable electronic components. The power activation module includes a switch configured to provide a path for current flow between a battery associated with the power activation module, the one or more wearable electronic components, and a ground terminal. The power activation module also includes a sensor configured to detect whether a signal is applied to the sensor and, based on the detection, output a first digital output signal for controlling, at least in part, the switch to control the current flow from the battery to the one or more wearable electronic components. The power activation module also includes a lock pin configured to receive a lock signal, wherein when the lock signal is received, the switch is locked to allow current flow from the battery to the one or more wearable electronic components.

Three bridge circuits (101, 111, 121), each include magnetoresistive sensors coupled as a Wheatstone bridge (100) to sense a magnetic field (160) in three orthogonal directions (110, 120, 130) that are set with a single pinning material deposition and bulk wafer setting procedure. One of the three bridge circuits (121) includes a first magnetoresistive sensor (141) comprising a first sensing element (122) disposed on a pinned layer (126), the first sensing element (122) having first and second edges and first and second sides, and a first flux guide (132) disposed non-parallel to the first side of the substrate and having an end that is proximate to the first edge and on the first side of the first sensing element (122). An optional second flux guide (136) may be disposed non-parallel to the first side of the substrate and having an end that is proximate to the second edge and the second side of the first sensing element (122).

An object of the present invention is to reduce leakage magnetic flux in a magnetic sensor provided with a sensor substrate and an external magnetic member. A magnetic sensor includes: a sensor substrate having an element forming surface on which magnetic sensing elements are formed, first and second side surfaces, and a back surface; a first external magnetic member provided between the first and second magnetic sensing elements; and a second external magnetic member having first and second parts and covering the first side surface and second side surface, respectively. The first and second parts of the second external magnetic member protrude from the element forming surface. According to the present invention, since the first and second parts of the second external magnetic member protrude from the element forming surface, leakage of magnetic flux between the first and second external magnetic members is reduced.

According to an embodiment, a magnetic field sensor includes: one or more magnetic field sensing elements; and a magnet structure to provide a bias magnetic field about the one or more magnetic field sensing elements, the magnet structure includes alternating magnetic layers and non-magnetic layers with at least three magnetic layers.

A magnetic tunnel junction (MTJ) element is provided. The MTJ element includes a reference layer, a tunnel barrier layer disposed over the reference layer, a free layer disposed over the tunnel barrier layer, and a diffusion barrier layer disposed over the free layer. The MU element in accordance with the present disclosure exhibits a low resistance desired for a low-power write operation, and a high TIM coefficient desired for a low bit-error-rate (BER) read operation.

A magnetic sensor chip includes a substrate including a first main surface, and a magnetoresistive element having a magnetosensitive direction parallel or substantially parallel to the first main surface. The magnetoresistive element includes a reference layer, an intermediate layer, and a free layer stacked in a stacking direction perpendicular or substantially perpendicular to the first main surface. A direction of magnetic anisotropy of the free layer where no external magnetic field acts on the magnetic sensor chip is parallel or substantially parallel to the stacking direction and perpendicular or substantially perpendicular to the magnetosensitive direction. When a stress acts on the substrate predominantly in a first direction parallel or substantially parallel to the first main surface, a direction of stress-induced magnetic anisotropy in the free layer is perpendicular or substantially perpendicular to the magnetosensitive direction and the stacking direction.

An apparatus for generating magnetic vortex spin structures includes a device for moving at least one magnetic domain wall in a magnetic domain wall channel structure; and a device for generating and storing at least one magnetic vortex spin structure in response to the magnetic domain wall moved in the domain wall channel structure.

An apparatus for generating magnetic vortex spin structures includes a device for moving at least one magnetic domain wall in a magnetic domain wall channel structure; and a device for generating and storing at least one magnetic vortex spin structure in response to the magnetic domain wall moved in the domain wall channel structure.

A magnetic sensor device for detecting linear movement of a moving body includes a magnetic field generation unit and a magnetic field detection unit, which is provided to be capable of detecting the magnetic field generated by the magnetic field generation unit. The magnetic field detection unit is provided to be relatively moveable along a first axis accompanying linear movement of the moving body. The first axis is parallel to the direction of movement of the moving body. The magnetic field generation unit includes a first magnetic field generation unit and a second magnetic field generation unit. The first magnetic field generation unit and the second magnetic field generation unit are arranged substantially parallel to the first axis. A first line segment parallel to a first magnetization direction of the first magnetic field generation unit is inclined with respect to a second axis orthogonal to the first axis. A second line segment parallel to a second magnetization direction of the second magnetic field generation unit is inclined with respect to the second axis. The first line segment and the second line segment are positioned symmetrically with respect to the second axis and intersect each other to open toward the first axis.

A method for use in a sensor includes generating a first signal by a first sensing module in response to a magnetic field associated with a rotating target, generating a base word based on the first signal, the base word including a first base bit that is generated by comparing respective components of the first signal, reversing a respective polarity of the first signal and offsetting the first signal, generating a test word based on the first signal, the test word being generated after the respective polarity of the first signal is reversed and the first signal is offset, the test word including a first test bit that is generated by comparing the respective components of the first signal, and setting a value of an error signal based on whether the test word matches the base word.