A readout integrated circuit (IC) architecture for a tunnelling magnetoresistive (TMR) sensor which uses common mode feedback to achieve a performance level suitable for accurate detection of biomagnetic signals. The architecture uses a three-operational amplifier configuration with chopper stabilization. The architecture may form part of a fully integrated biomagnetic sensor electronics package that includes an array of TMR sensors together with modules for signal amplification and conditioning, data conversion and communication.

A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, and the tunnel barrier layer has a spinel structure represented by a composition formula of AIn.sub.2O.sub.x (0<x≤4), and an A-site is a non-magnetic divalent cation which is one or more selected from a group consisting of magnesium, zinc and cadmium.

The present disclosure provides a semiconductor structure. The semiconductor structure includes a substrate, a transistor region, a first and a second contact plug, a first metal via, a magnetic tunneling junction (MTJ) structure, and a metal interconnect. The transistor region includes a gate over the substrate, and a first and a second doped regions at least partially in the substrate. The first and the second contact plug are over the transistor region. The first and the second contact plug include a coplanar upper surface. The first metal via and the MTJ structure are over the first and the second contact plug, respectively. The first metal via is leveled with the MTJ structure. The metal interconnect is over the first metal via and the MTJ structure, and the metal interconnect includes at least two second metal vias in contact with the first metal via and the MTJ structure, respectively.

A magnetic sensor capable of reducing noise caused by an interference magnetic field and capable of outputting a highly accurate signal in accordance with changes in a detected magnetic field includes a magnetic detection element, a first magnetic body having a first surface and a second surface, which is opposite to the first surface, and a second magnetic body positioned approximately in the center of the first magnetic body in the short direction on the first surface of the first magnetic body. The magnetic detection element is provided to be opposite to the second magnetic body with the first magnetic body interposed in between and positioned approximately in the center of the first magnetic body in the short direction. The magnetic sensing direction of the magnetic detection element is a direction approximately parallel to the short direction of the first magnetic body and the second magnetic body, and a width W1 of the first magnetic body is larger than a width W2 of the second magnetic body.

Provided are a magnetic tunneling junction device having a relatively high tunneling magnetoresistance (TMR) ratio; and a memory device including the magnetic tunneling junction device. The magnetic tunneling junction device includes: a pinned layer having a first surface and a second surface opposite the first surface; a seed layer disposed in contact with the first surface of the pinned layer; a free layer disposed to face the second surface of the pinned layer; and a tunnel barrier layer disposed between the pinned layer and the free layer, wherein the seed layer includes at least one amorphous material selected from CoFeX and CoFeXTa, and the X includes at least one element selected from niobium (Nb), molybdenum (Mo), tungsten (W), chromium (Cr), zirconium (Zr), and hafnium (Hf). The seed layer may not include boron.

An exemplary wearable sensor unit includes 1) a magnetometer comprising a vapor cell comprising an input window and containing an alkali metal, and a light source configured to output light that passes through the input window and into the vapor cell along a transit path, and 2) a temperature control circuit external to the vapor cell and configured to create a temperature gradient within the vapor cell, the temperature gradient configured to concentrate the alkali metal within the vapor cell away from the transit path of the light.

A magnetic memory device includes a magnetic tunnel junction (MTJ) stack, a spin-orbit torque (SOT) induction wiring disposed over the MTJ stack, a first terminal coupled to a first end of the SOT induction wiring, a second terminal coupled to a second end of the SOT induction wiring, and a shared selector layer coupled to the first terminal.

In an embodiment, a device includes: a magnetoresistive random access memory cell including: a bottom electrode; a reference layer over the bottom electrode; a tunnel barrier layer over the reference layer, the tunnel barrier layer including a first composition of magnesium and oxygen; a free layer over the tunnel barrier layer, the free layer having a lesser coercivity than the reference layer; a cap layer over the free layer, the cap layer including a second composition of magnesium and oxygen, the second composition of magnesium and oxygen having a greater atomic concentration of oxygen and a lesser atomic concentration of magnesium than the first composition of magnesium and oxygen; and a top electrode over the cap layer.

A magnetic sensor device for detecting linear movement of a moving body includes a magnetic field generation unit and a magnetic field detection unit, which is provided to be capable of detecting the magnetic field generated by the magnetic field generation unit. The magnetic field detection unit is provided to be relatively moveable along a first axis accompanying linear movement of the moving body. The first axis is parallel to the direction of movement of the moving body. The magnetic field generation unit includes a first magnetic field generation unit and a second magnetic field generation unit. The first magnetic field generation unit and the second magnetic field generation unit are arranged substantially parallel to the first axis. A first line segment parallel to a first magnetization direction of the first magnetic field generation unit is inclined with respect to a second axis orthogonal to the first axis. A second line segment parallel to a second magnetization direction of the second magnetic field generation unit is inclined with respect to the second axis. The first line segment and the second line segment are positioned symmetrically with respect to the second axis and intersect each other to open toward the first axis.

A camera system may include circuitry for measuring the positions of an optics assembly (e.g., one or more lenses) and/or an image sensor of the camera system. The circuitry may include analog circuits comprising a first and a second position sensors to produce a first and a second sensor signals based on a first magnetic field and a second magnetic field respectively. The magnetic fields may have the same or different polarities detectable by the position sensors. The position sensors may be coupled in parallel in the same or reverse directions to produce a combined sensor output. The circuitry may determine position information for the optics assembly and/or the image sensor based on the combined sensor output. The camera system may use the position information as a feedback signal to control the position of the optics assembly (e.g., for autofocus) and/or the position of the image sensor (e.g., for optical image stabilization (OIS)).