A magnetoresistive Z-axis gradient sensor chip, which is used to detect the gradient in the XY plane of a Z-axis magnetic field component generated by a magnetic medium; the sensor chip comprises a Si substrate, a collection of two or two groups of flux guide devices separated a distance Lg and an arrangement of electrically interconnected magnetoresistive sensor units. The magnetoresistive sensor units are located on the Si substrate and located above or below the edge of the flux guide devices as well; the flux guide devices convert the component of the Z-axis magnetic field into the direction parallel to the surface of the Si substrate along the sensing axis direction of the magnetoresistive sensing units. The magnetoresistive sensor units are electrically interconnected into a half bridge or a full bridge gradiometer arrangement, wherein the opposite bridge arms are separated by distance Lg. This sensor chip can be utilized with a PCB or in combination with a PCB plus back-bias magnet with casing. The sensor measures the Z-axis magnetic field gradient by using magnetoresistive sensors with in-plane sensing axes. This sensor chip has several advantages relative to a Hall Effect sensor device, including smaller size, lower power consumption, and higher magnetic field sensitivity.

A magnetic card reader comprising a groove for shifting of a magnetic card and a magnetic read head mounted on a first printed-circuit board so as to enable reading of a magnetic stripe of the magnetic card. The magnetic read head has a tunnel magnetoresistance sensor called a TMR magnetic sensor positioned in a recess of a side wall of the groove.

A signal processing method according to the present disclosure is for use in a signal processing system including a first magnetic detection unit, a second magnetic detection unit, and a processing unit. The signal processing method includes an angle calculating step and a failure diagnosis step. The angle calculating step includes transforming, by using an inverse trigonometric function, a sine signal, a cosine signal, and a tangent signal into a first angle signal, a second angle signal, and a third angle signal, respectively. The failure diagnosis step includes making a failure diagnosis of the first magnetic detection unit and the second magnetic detection unit by comparing with each other two or more pieces of angle information selected from first angle information, second angle information, and third angle information.

A signal processing method according to the present disclosure is for use in a signal processing system including a first magnetic detection unit, a second magnetic detection unit, and a processing unit. The signal processing method includes an angle calculating step and a failure diagnosis step. The angle calculating step includes transforming, by using an inverse trigonometric function, a sine signal, a cosine signal, and a tangent signal into a first angle signal, a second angle signal, and a third angle signal, respectively. The failure diagnosis step includes making a failure diagnosis of the first magnetic detection unit and the second magnetic detection unit by comparing with each other two or more pieces of angle information selected from first angle information, second angle information, and third angle information.

What is proposed is a current sensor comprising a current rail and comprising a magnetic field sensor, wherein the magnetic field sensor is configured to measure a magnetic field induced by a current flowing through the current rail, wherein a first insulation layer and a second insulation layer are arranged between the current rail and the magnetic field sensor, wherein an interface between the first insulation layer and the second insulation layer is free of a contact with the current rail and/or is free of a contact with the magnetic field sensor.

What is proposed is a current sensor comprising a current rail and comprising a magnetic field sensor, wherein the magnetic field sensor is configured to measure a magnetic field induced by a current flowing through the current rail, wherein a first insulation layer and a second insulation layer are arranged between the current rail and the magnetic field sensor, wherein an interface between the first insulation layer and the second insulation layer is free of a contact with the current rail and/or is free of a contact with the magnetic field sensor.

An improved system for measuring current within a power semiconductor module is disclosed, where the system is integrated within the power module. The system includes a point field detector sensing a magnetic field resulting from current flowing in one phase of the module. A lead frame conductor may be provided to shape the magnetic field and minimize the influence of cross-coupled magnetic fields from currents conducted in other power semiconductor devices within one phase of the module. Optionally, a second point field detector may be provided at a second location within the module to sense a magnetic field resulting from the current flowing in the same phase of the module. Each phase of the power module includes at least one point field detector. A decoupling circuit is provided to decouple multiple currents flowing within the same phase or to decouple currents flowing within different phases of the power module.

A magnetic field detection device of an embodiment of the disclosure includes: a first magnetic field detection element having a first resistance value increasing upon application of a first magnetic field in a first direction and decreasing upon application of a second magnetic field in a second direction; and a second magnetic field detection element having a second resistance value decreasing upon application of the first magnetic field and increasing upon application of the second magnetic field. The first and second magnetic field detection elements each include first and second magneto-resistive effect films coupled in series. The first magneto-resistive effect film has a first major-axis direction inclined at a first inclination angle relative to the first direction. The second magneto-resistive effect film has a second major-axis direction inclined at a second inclination angle relative to the first direction. The magnetic field detection device satisfies conditional expressions (1) and (2).

A magnetic field detection device of an embodiment of the disclosure includes: a first magnetic field detection element having a first resistance value increasing upon application of a first magnetic field in a first direction and decreasing upon application of a second magnetic field in a second direction; and a second magnetic field detection element having a second resistance value decreasing upon application of the first magnetic field and increasing upon application of the second magnetic field. The first and second magnetic field detection elements each include first and second magneto-resistive effect films coupled in series. The first magneto-resistive effect film has a first major-axis direction inclined at a first inclination angle relative to the first direction. The second magneto-resistive effect film has a second major-axis direction inclined at a second inclination angle relative to the first direction. The magnetic field detection device satisfies conditional expressions (1) and (2).

A magnetoresistive acoustic wave sensor with high sensitivity and an array device thereof is disclosed, in which a magnetoresistive acoustic wave sensor comprises a protective tube shell, a magnetic vibration assembly, and a magnetoresistive chip located inside the protective tube shell. The protective tube shell comprises at least one opening which is covered by the magnetic vibration assembly. The plane where the magnetoresistive sensor chip is located is perpendicular to the plane where the magnetic vibration assembly is located, and the sensing direction of the magnetoresistive sensor chip is located in the plane where magnetoresistive sensor chip is located, and is perpendicular to or parallel to the plane where the magnetic vibration assembly is located. Alternatively, the plane where the magnetoresistive sensor chip is located is parallel to the plane where the magnetic vibration assembly is located, and the sensing direction of the magnetoresistive sensor chip is located in the plane where the magnetoresistive sensor chip is located, and is parallel to the plane where the magnetic vibration assembly is located. The magnetoresistive acoustic wave sensor with high sensitivity and an array device thereof is of small size, high sensitivity, low power consumption, high response speed, good stable temperature, large response frequency bandwidth, excellent low-frequency response and the like.