A light shaping optic may include a substrate. The light shaping optic may include a structure disposed on the substrate, wherein the structure is configured to receive one or more input beams of light with a uniform intensity field and less than a threshold total intensity, and wherein the structure is configured to shape the one or more input beams of light to form one or more output beams of light with a non-uniform intensity field and less than the threshold total intensity.

Apparatus and method for adaptively adjusting amplifier gain based on detected distance to a target in a light detection and ranging (LiDAR) system. In some embodiments, the amplifier amplifies detected pulses obtained from a photodetector, and the gain is adjusted from among at least two selectable gain modes responsive to a measured time of flight (ToF) for the pulses. A first range of gain levels can be used for targets that are within a first maximum distance range, and a second range of gain levels can be used for targets that are beyond the first maximum distance range. Each mode can extend from a minimum to a maximum value along a selected linear slope. A gain adjustment circuit can use a Gilbert Cell or a multiplier and fully differential amplifier arrangement.

Techniques, systems, architectures, and methods for amplifying the time difference between events detected on a focal plane array, allowing greater resolution than that afforded by a reference clock are herein disclosed.

Disclosed herein are various embodiments of an adaptive ladar receiver and associated method whereby the active pixels in a photodetector array used for reception of ladar pulse returns can be adaptively controlled based at least in part on where the ladar pulses were targeted. Additional embodiments disclose improved imaging optics for use by the receiver and further adaptive control techniques for selecting which pixels of the photodetector array are used for sensing incident light.

A light detection and ranging system can have a light source coupled to a reflector consisting of a waveguide. The waveguide may be tuned to a selected polarization by a controller to block retroreflected photons resulting from a light beam emitted from the reflector. The waveguide polarization can be altered over time by the controller to provide customized blocking of photons.

The present disclosure relates to limitation of noise on light detectors using an aperture. One example embodiment includes a system. The system includes a lens disposed relative to a scene and configured to focus light from the scene onto a focal plane. The system also includes an aperture defined within an opaque material disposed at the focal plane of the lens. The aperture has a cross-sectional area. In addition, the system includes an array of light detectors disposed on a side of the focal plane opposite the lens and configured to intercept and detect diverging light focused by the lens and transmitted through the aperture. A cross-sectional area of the array of light detectors that intercepts the diverging light is greater than the cross-sectional area of the aperture.

Disclosed is a light receiving element including an on-chip lens, a wiring layer, and a semiconductor layer disposed between the on-chip lens and the wiring layer. The semiconductor layer includes a photodiode, a first transfer transistor that transfers electric charge generated in the photodiode to a first charge storage portion, a second transfer transistor that transfers electric charge generated in the photodiode to a second charge storage portion, and an interpixel separation portion that separates the semiconductor layers of adjacent pixels from each other, for at least part of the semiconductor layer in the depth direction. The wiring layer has at least one layer including a light blocking member. The light blocking member is disposed to overlap with the photodiode in a plan view.

Disclosed is a light receiving element including an on-chip lens, a wiring layer, and a semiconductor layer disposed between the on-chip lens and the wiring layer. The semiconductor layer includes a photodiode, a first transfer transistor that transfers electric charge generated in the photodiode to a first charge storage portion, a second transfer transistor that transfers electric charge generated in the photodiode to a second charge storage portion, and an interpixel separation portion that separates the semiconductor layers of adjacent pixels from each other, for at least part of the semiconductor layer in the depth direction. The wiring layer has at least one layer including a light blocking member. The light blocking member is disposed to overlap with the photodiode in a plan view.

This document describes techniques and systems to increase the dynamic range of time-of-flight (ToF) lidar systems. The described lidar system adjusts, based on the energy of a first return pulse, the bias voltage of a photodetector for other return pulses of the object pixel. The bias voltage can be adjusted down for highly-reflective or close-range objects. Similarly, the bias voltage can be increased for low-reflectivity or long-range objects. The ability of the described lidar system to adjust the bias voltage of the photodetector for each object pixel increases the dynamic range of the lidar system without additional hardware or a complex readout. The increased dynamic range allows the described lidar system to maintain a long-range capability, while accurately measuring return-pulse intensity for detecting close-range or highly-reflective objects.

An optoelectronic device includes a first semiconductor die, having first front and rear surfaces and including at least one avalanche photodetector configured to output electrical pulses in response to photons incident on the first front surface. A second semiconductor die has a second front surface, which is bonded to the first rear surface, and a second rear surface, and includes a photodetector receiver analog circuit coupled to the at least one avalanche photodetector and an emitter driver circuit configured to drive a pulsed optical emitter. A third semiconductor die has a third front surface, which is bonded to the second rear surface, and a third rear surface, and includes logic circuits coupled to control the photodetector receiver analog circuit and the emitter driver circuit and to receive and process the electrical pulses output by the at least one avalanche photodetector.