Provided is a radiation detection device, comprising: a radiation detection unit consisting of two or more radiation detection elements each constituted by a pair of electrodes consisting of a first electrode and a second electrode and a radiation absorption layer that is sandwiched between the pair of electrodes, the two or more radiation detection elements being arranged in a surface direction of the radiation absorption layer; and one or more power supply units electrically connected to the first electrode, wherein the radiation detection unit comprises two or more of the first electrodes to which mutually different voltages are applied.

A system and method include an array of sensors electrically coupled to a material capable of converting a gamma ray to electrical charge, where distances between a center of a first sensor and centers of each sensor immediately-adjacent to the first sensor are substantially equal. Signals are collected from each sensor immediately-adjacent to the first sensor, and one of a plurality of logical sub-pixels of the first sensor is determined based on the signals collected from each sensor immediately-adjacent to the first sensor.

According to an aspect, an active matrix substrate of an X-ray imaging panel includes: an active matrix substrate having a pixel region including a plurality of pixels; and a scintillator that converts X-rays projected onto the X-ray imaging panel to scintillation light. The plurality of pixels include respective photoelectric conversion elements. The active matrix substrate further includes a first planarizing film that covers the photoelectric conversion elements, is formed from an organic resin film, and has a plurality of first contact holes and a first wiring line that is formed in the first contact holes and in a layer upper than the first planarizing film and connected to the photoelectric conversion elements within the first contact holes.

Devices, systems, and methods of using one or more memristors as a radiation sensor are enabled. A memristor can be attractive as a sensor due to its passive low power characteristics. Medical and environment monitoring are contemplated use cases. Sensing radiation as part of a security system (at an airport for example) and screening food for radiation exposure are also possible uses. The memristor as a radiation sensor may possibly provide an inexpensive and easy alternative to personal thermoluminescent dosimeters (TLD). Memristor devices with high current and low power operation may be attached with wearable plastic substrates. An example device includes two metal strips with a 50 μm thick layer of TiO.sub.2 memristor material. The device may be made large relative to traditional memristors which are nanometers in scale but its increased thickness can significantly increase the probability of radiation interaction with the memristor material.

The present disclosure provides a flat panel detector and a driving method thereof. A detection unit includes: a first transistor, a second transistor, a storage capacitor and a photoelectric detection device, and because an active layer of the second transistor is made of amorphous silicon semiconductor materials and an active layer of the first transistor is made of low-temperature poly-silicon semiconductor materials or metallic oxide semiconductor materials, transmission delay of an electric signal generated by the photoelectric detection device may be reduced by controlling conduction and cut-off of the first transistor and controlling conduction and cut-off of the second transistor.

Disclosed herein is a method, comprising: forming a radiation absorption layer comprising a layer of SiC on a semiconductor substrate; forming a first electric contacts on a first surface of the radiation absorption layer; bonding the radiation absorption layer with an electronics layer; removing the semiconductor substrate; forming a second electric contacts on a second surface of the radiation absorption layer distal from the electronics layer.

According to one embodiment, a detector module includes a direct-conversion semiconductor crystal, a first electrode provided on a first surface side of the semiconductor crystal, and a plurality of second electrodes provided on a second surface side of the semiconductor crystal opposite to the first electrode with the semiconductor crystal therebetween. The first electrode includes a first partial electrode and a second partial electrode which are applied with a high voltage independently of each other and divided at least in a channel direction.

Disclosed herein is a method comprising: forming a doped region of a semiconductor substrate by doping a surface of the semiconductor substrate with dopants; driving the dopants into the semiconductor substrate by annealing the semiconductor substrate; controlling doping profile of the doped region by repeating doping and annealing the semiconductor substrate; forming a first electrode on the semiconductor substrate, wherein the first electrode is in electrical contact with the doped region; forming an outer electrode arranged around the first electrode, wherein the outer electrode is electrically insulated from the first electrode.

A detector for electromagnetic radiation includes: a first, pixelated electrode layer having a plurality of electrode pixels; a first layer including a plurality of tiles, the plurality of tiles including a material absorbing and converting the electromagnetic radiation, wherein at least edges of tiles facing another tile have been cut using pulsed laser cutting; and a second electrode layer.

A direct-conversion X-ray detector according to an embodiment includes a plurality of anode electrodes, at least one cathode electrode, and electric-field forming circuitry. The anode electrodes are aligned in a cone angle direction of an incident X-ray. The cathode electrode is positioned on an incident side of an X-ray relative to the anode electrodes, and that opposes the anode electrodes. The electric-field forming circuitry configured to form an electric field in a direction based on a cone angle of the X-ray, between the anode electrodes and the cathode electrode.