Disclosed herein is an apparatus suitable for radiation detection. The apparatus may comprise a radiation absorption layer and a first electrode on the radiation absorption layer. The radiation absorption layer may be configured to generate charge carriers therein from a radiation particle absorbed by the radiation absorption layer. The first electrode may be configured to generate an electric field in the radiation absorption layer. The first electrode may have a geometry shaping the electric field so that the electric field in an amplification region of the radiation absorption layer has a field strength sufficient to cause an avalanche of the charge carriers in the amplification region.

A photosensor substrate (10) includes a plurality of sensor units (1). The sensor units (1) each include a switching element (2), a lower electrode (3) connected to the switching element (2), and a photoelectric conversion element (4). The photosensor substrate (10) includes lines (G and D) connected to the switching elements of the plurality of sensor units and led out of a sensor area (SA), and terminal parts (TG and TD) connected to the lines (G and D) led out of the sensor area (SA). The terminal parts (TG and TD) each include a protective layer (4a) overlapped with the line (G or D) led out of the sensor area and containing a material for the photoelectric conversion element (4), and a terminal conductor (6) connected to the line (G or D) via an opening (CH1) provided in the protective layer (4a).

A method of operating a radiation imaging apparatus including a sensor substrate which includes a plurality of pixels arranged in a matrix, each pixel including a conversion element configured to convert radiation or light into an electric charge and accumulate the electric charge and a switch element. The method includes, supplying a first driving potential to set the switch element in a non-conductive state, changing a bias potential supplied to a second terminal of the conversion element to remain a charge in the conversion element, supplying a second driving potential to the switch element to readout a remaining charge, and calculating a threshold voltage of the switch element based on the remaining charge.

A radiation sensing device is provided in the present disclosure. The radiation sensing device includes a substrate and a plurality of semiconductor units. The semiconductor units are disposed on the substrate, and at least one of the semiconductor units includes a first gate electrode, an active layer, and a second gate electrode. The active layer is disposed on the first gate electrode, and the second gate electrode is disposed on the active layer. The second gate electrode has a positive bias voltage during a standby mode. The second electrode may be configured to have a positive bias voltage during the standby mode for improving influence on electrical properties of the semiconductor unit after the semiconductor unit is irradiated by radiation.

The present invention relates to a detector (22′) for detecting ionizing radiation, comprising: a directly converting semi-conductor layer (36) for producing charge carriers in response to incident ionizing radiation; and a plurality of electrodes (34) corresponding to pixels for registering the charge carriers and generate a signal corresponding to registered charge carriers; wherein an electrode of the plurality of electrodes (34) is structured to two-dimensionally intertwine with at least two adjacent electrodes to register the charge carriers by said electrode and by at least one adjacent electrode. The present invention further relates to a detection method and to an imaging apparatus.

A method for photon counting for pixels in a pixelated detector is disclosed, wherein for each of the pixels, one or more neighbouring pixels are defined. The method comprises receiving a charge in one or more of the pixels and comparing for each of the pixels the charge with a trigger threshold. If the charge in a pixel is above the trigger threshold, the charge is registered in the pixel after a registration delay, wherein the registration delay is dependent on the level of the charge received in the pixel in such a way that a registration delay decreases with increasing charge. A counter for a pixel is incremented when the charge is registered and an increment of a counter of the neighbouring pixels is inhibited. Pixelated semiconductor detectors are also disclosed.

The present invention provides a method and apparatus for processing signals of a semiconductor detector, including: acquiring a relationship of a time difference between anode and cathode signals of the semiconductor detector with an anode signal amplitude; obtaining an optimal data screening interval according to the relationship of the time difference between anode and cathode signals of the semiconductor detector with the anode signal amplitude, wherein the optimal data screening interval is an interval where the time difference between the anode and cathode signals is greater than 50 ns; and screening and processing the collected data according to the optimal data screening interval when the semiconductor detector collects data. The present invention better overcomes the inherent crystal defects of the detector, reduces the effect of background noise, increases the energy resolution of the cadmium zinc telluride detector under room temperature, and improves the peak-to-compton ratio.

In a method and control unit for activating an X-ray detector, having an X-ray sensitive sensor layer and an arrangement of pixel electrodes connected at the back to the sensor layer, an individually adjusted depletion voltage is applied to each of the pixel electrodes. The value of the depletion voltages applied to different pixel electrodes is chosen to be different such that the effective pixel sizes respectively associated with the pixel electrodes are aligned with each other.

An apparatus for detecting X-ray, comprising an X-ray absorption layer comprising an electrode, an electronics layer and a wall sealing a space among electrical connections between the X-ray absorption layer and the electronics layer. The electronics layer comprises: a first and second voltage comparators configured to compare a voltage of an electrode to a first and second thresholds respectively; a counter configured to register a number of X-ray photons absorbed by the X-ray absorption layer; and a controller configured to: start a time delay from a time at which an absolute value of the voltage equals or exceeds an absolute value of the first threshold; activate the second voltage comparator during the time delay; cause the number registered by the counter to increase by one, if, during the time delay, an absolute value of the voltage equals or exceeds an absolute value of the second threshold.

An X-ray imaging device, including: a transfer substrate including electric connection elements; an array of pixels, each including a monolithic elementary chip bonded and electrically connected to elements of electric connection of the transfer substrate, and a direct conversion X photon detector electrically connected to the elementary chip, wherein, in each pixel, the elementary chip includes an integrated circuit for reading from the detector of the pixel.