Patent classifications
G01T1/242
SEMICONDUCTOR DETECTOR AND METHOD OF MANUFACTURING THE SAME
A technique capable of improving a performance of a semiconductor detector is provided. The semiconductor detector is made based on injection of an underfill into a gap between a first semiconductor chip and a second semiconductor chip in a flip-chip connection state, but the underfill is not formed in periphery of a connection structure connecting a reading electrode pad and a gate terminal through a bump electrode.
RADIATION DETECTION SYSTEMS AND METHODS
A method of forming a radiation detector includes forming a stack including a plurality of arrays of radiation detection devices. Forming an array of the plurality of arrays includes forming a polysilicon layer over an interlayer dielectric layer of another array of the plurality of arrays; forming charge storage layers over the polysilicon layer; forming a second polysilicon layer over the charge storage layers; etching the second polysilicon layer to form gate stacks; and depositing an interlayer dielectric disposed on at least three sides of the gate stacks, the interlayer dielectric including a radiation reactive material.
Panel Radiation Detector
A panel radiation detector is provided for detecting radiation event(s) of ionizing radiation, comprising a plurality of adjoining plastic scintillator slabs, a plurality of silicon photomultiplier sensors arranged at an edge of at least one of the plastic scintillator slabs) and configured to detect scintillation light generated in the scintillator slabs responsive to the radiation events, and a plurality of signal processing units each connected to one of the silicon photomultiplier sensors, wherein the signal processing units each comprise a digitization circuit configured to generate a digitized signal for signal analysis by executing 1-bit digitization of a detection signal generated by at least one of the silicon photomultiplier sensors responsive to the detected scintillation light for determining the energy of the detected radiation event(s).
Multi-spectral X-ray detector
Typically, a dual layer multi-spectral X-ray detector is capable of providing two points of spectral data about an imaged sample, because the front X-ray detector also acts to filter part of an incident X-ray spectrum before detection by a rear X-ray detector. A pre-filter can be placed in front of the front X-ray detector to enhance the spectral separation. However, the provision of a pre-filter implies that the intensity of the X-ray radiation must be increased to achieve the same signal to noise ratio. The present application concerns a multi-spectral X-ray detector with a front X-ray detector, a rear X-ray detector, and a structured spectral filter placed in-between them. The structured spectral filter has first and second regions configured to sample superpixels of the front X-ray detector, enabling three separate items of spectral information to be obtained per superpixel.
RADIATION PARTICLE STRIKE DETECTION
A radiation particle strike detection system is disclosed. The radiation particle strike detection system includes a radiation particle detector and a controller coupled to the radiation particle detector. The radiation particle detector is overlayed on at least one surface of a payload that is sensitive to interaction with radiation particles. The radiation particle detector is configured to undergo a change in state responsive to a radiation particle strike at a location on the radiation particle detector. The controller is configured to 1) monitor a state of the radiation particle detector; 2) detect a radiation particle strike on the radiation particle detector based on a change in state of the radiation particle detector; and 3) determine a location and time of the radiation particle strike on the radiation particle detector based on the change in state of the particle detector.
MULTI-PIECE MONO-LAYER RADIATION DETECTOR
The present invention relates to a radiation detector (100) comprising: i) a substrate (110); ii) a sensor, which is coupled to the substrate, the sensor comprising a first array (120) of sensor pixels, a second array (130) of signal read-out elements, and an electronic circuitry which is configured to provide image data based on signals received from the signal read-out elements; iii) a transducer, which is coupled to the substrate and to the sensor, the transducer comprising a third array (140) of subpixels, wherein at least two subpixels are assigned to one sensor pixel; wherein the second array of signal read-out elements and the third array of subpixels correspond to each other; wherein each of the subpixels comprises a radiation conversion material.
Radiation detector
According to one embodiment, a radiation detector includes a first layer including a metal complex, a first conductive layer, a second conductive layer provided between the first layer and the first conductive layer, and an organic semiconductor layer provided between the first conductive layer and the second conductive layer.
Methods for Determining Misalignment of X-ray Detectors
Disclosed herein is a method comprising: obtaining a third image from a first X-ray detector when the first X-ray detector and a second X-ray detector are misaligned; determining, based on a shift between a first image and the third image, a misalignment between the first X-ray detector and the second X-ray detector when the first and second detectors are misaligned; wherein the first image is an image the first X-ray detector should capture if the first and the second detectors are aligned.
Adaptive Compton camera for medical imaging
To optimize an image quality and/or a sensitivity, a Compton camera is adaptable. A scatter detector and/or a catcher detector may move closer to and/or further away from a patient and/or each other. This adaptation allows a balancing of the image quality and the sensitivity by altering the geometry.
PACKAGING METHODS OF SEMICONDUCTOR DEVICES
Disclosed herein is a method comprising: forming a first electrically conductive layer on a first surface of a substrate of semiconductor, wherein the first electrically conductive layer is in electrical contact with the semiconductor; bonding, at the first electrically conductive layer, a support wafer to the substrate of semiconductor; thinning the substrate of semiconductor.