Provide are a detector module, a detector, and a medical device. The detector module includes a plurality of detection sub-modules at least partially arranged in a stepped manner in a first direction. Each of the plurality of detection sub-modules includes a plurality of photoelectric conversion units arranged at intervals in a second direction intersecting with the first direction. One of two adjacent detection sub-modules is located at a higher step as a first detection sub-module, and the other one is located at a lower step and as a second detection sub-module. A first gap is formed between the plurality of photoelectric conversion units of the first detection sub-module. A second gap is formed between the plurality of photoelectric conversion units of the second detection sub-module. A width of the first gap in the second direction is smaller than a width of the second gap in the second direction.

The invention relates to a combined detector (660) comprising a gamma radiation detector (100) and an X-ray radiation detector (661). The gamma radiation detector (100) comprises a gamma scintillator array (101.sub.x, y), an optical modulator (102) and a first photodetector array (103.sub.a, b) for detecting the first scintillation light generated by the gamma scintillator array (101.sub.x, y). The optical modulator (102) is disposed between the gamma scintillator array (101.sub.x, y) and the first photodetector array (103.sub.a, b) for modulating a transmission of the first scintillation light between the gamma scintillator array (101.sub.x, y) and the first photodetector array (103.sub.a, b). The optical modulator (102) comprises at least one optical modulator pixel having a cross sectional area (102′) in a plane that is perpendicular to the gamma radiation receiving direction (104). The cross sectional area of each optical modulator pixel (102′) is greater than or equal to the cross sectional area of each photodetector pixel (103′.sub.a, b).

A radiation sensor that may include a first transistor, a first isolated conductive structure that comprises a floating gate of the first transistor, a first group of radiation sensing diodes that are coupled to each other, wherein the first group is configured to convert sensed radiation that is sensed by the first group to a first output signal, and to change a state of the first isolated conductive structure using the first output signal, a second transistor, a second isolated conductive structure that comprises a floating gate of the second transistor, and a second group of radiation sensing diodes that are coupled to each other, wherein the second group is configured to convert sensed radiation that is sensed by the second group to a second output signal, and to change a state, under a control of the first transistor, of the second isolated conductive structure using the second output signal.

Disclosed herein is a method comprising: obtaining a third image from a first X-ray detector when the first X-ray detector and a second X-ray detector are misaligned; determining, based on a shift between a first image and the third image, a misalignment between the first X-ray detector and the second X-ray detector when the first and second detectors are misaligned; wherein the first image is an image the first X-ray detector should capture if the first and the second detectors are aligned.

A radiation sensing device is provided in the present disclosure. The radiation sensing device includes a substrate and a plurality of semiconductor units. The semiconductor units are disposed on the substrate, and at least one of the semiconductor units includes a first gate electrode, an active layer, and a second gate electrode. The active layer is disposed on the first gate electrode, and the second gate electrode is disposed on the active layer. The second gate electrode has a positive bias voltage during a standby mode. The second electrode may be configured to have a positive bias voltage during the standby mode for improving influence on electrical properties of the semiconductor unit after the semiconductor unit is irradiated by radiation.

To optimize an image quality and/or a sensitivity, a Compton camera is adaptable. A scatter detector and/or a catcher detector may move closer to and/or further away from a patient and/or each other. This adaptation allows a balancing of the image quality and the sensitivity by altering the geometry.

An array (1) for detecting electromagnetic radiation is provided for a radiographic inspection system (20). The array has a plurality of detector elements (2) arranged consecutively along a scan line which extends in a first direction (Y). Each of the detector elements has a detection surface (3) for receiving electromagnetic radiation and converting the received electromagnetic radiation into a corresponding detection signal. Each detection surface (3) has a surface normal (4, N) that extends in a common plane (S) and converges into a common focus (5). The common plane (S) extends in the first direction (Y). The distances between the common focus and the detection surfaces along the respective surface normal (4, N) are different for at least two detector elements.

The invention relates to energy-resolved X-ray imaging apparatus and method. The present disclosure provides an apparatus for electromagnetic irradiation imaging. The apparatus includes one or more pixels, each pixel including a plurality of detector cells arranged in a row extending in a row direction. The row is configured to receive photons at an incident surface at one end of the row, and the received photons penetrate the plurality of detector cells in the row direction. The plurality of detector cells of the same row are configured to generate respective signals that collectively indicate an energy-resolved spectral profile of the photons based on the penetration of the photons into the row of detector cells.

A radiation-sensitive device is disclosed. The radiation-sensitive device includes: a plurality of single photon avalanche diodes (SPADs), and processing circuitry configured to determine an intensity of incident radiation using at least one of the plurality SPADs. An amount of the SPADs used to determine the intensity of the incident radiation varies in relation to the intensity of the incident radiation. Also disclosed in an associated method of determining an intensity of radiation incident upon such a radiation-sensitive device, and uses of the radiation-sensitive device in an electronic-nose or point-of-care apparatus, or for ambient light sensing.

Disclosed herein is a method for forming a radiation detector. The method comprises forming a radiation absorption layer and bonding an electronics layer to the radiation absorption layer. The electronics layer comprises an electronic system configured to process electrical signals generated in the radiation absorption layer upon absorbing radiation photons. The method for forming the radiation absorption layer comprises forming a trench into a first surface of a semiconductor substrate; doping a sidewall of the trench; forming a first electrical contact on the first surface; forming a second electrical contact on a second surface of the semiconductor substrate. The second surface is opposite the first surface. The method further comprises dicing the semiconductor substrate along the trench.