A photon detection device including: a silicon photomultiplier (SiPM) configured to generate a detected signal when the SiPM absorbs a photon; an amplifier; and a transmission line stub between the SiPM and amplifier input. The SiPM connection is configured to transmit the detected signal to the amplifier and a transmission line stub is also configured to receive the SiPM signal and generate a time-delayed reflected signal back into the amplifier input; wherein the amplifier is configured to amplify a combination of the detected signal and the time-delayed reflected signal. The end of the transmission line stub is terminated with a complex impedance that can simultaneously absorb some components of the SiPM pulse response, and reflect others.

The invention relates to an X-ray detector component comprising an X-ray detector chip made from a silicon substrate and comprising charge collecting electrodes. The X-ray detector chip is suitable for providing an X-ray-dependent current at the charge collecting electrodes. The X-ray detector component further comprises a CMOS read-out circuit chip comprising connection electrodes. The X-ray detector chip and the CMOS read-out circuit chip are mechanically and electrically connected in such a manner that the charge collecting electrodes and the connection electrodes are electrically connected. The invention further relates to an X-ray detection module, an imaging device and a method for manufacturing an X-ray detector component.

A sensor chip includes a plurality of microcells to which an xy position is assigned, composed of a photodiode D.sub.n,m, a current divider S.sub.q,nm, with outputs S.sub.q,v,nm, for the y direction and outputs S.sub.q,h,nm for the x direction, the outputs S.sub.q,h,nm being equipped with a quenching apparatus R.sub.q,h,nm for quenching the current, and the outputs S.sub.q,v,nm being equipped with a quenching apparatus R.sub.q,v,nm for quenching the current, which divides the generated photocurrent of the diodes Dn,m into two equally large fractions. The microcells are arranged in a sequence of N columns in the x direction x.sub.n,=x.sub.1, x.sub.2, x.sub.3, . . . x.sub.n with n=1, 2, 3, . . . N and M rows in the y direction y.sub.m,=y.sub.1, y.sub.2, y.sub.3, . . . y.sub.m with m=1, 2, 3, . . . M. Outputs S.sub.q,h,nm of the current dividers S.sub.q,nm for the x direction are connected to the read-out channels Ch.sub.A and Ch.sub.B for the x direction.

Disclosed herein is an apparatus suitable for radiation detection. The apparatus may comprise a radiation absorption layer and a first electrode on the radiation absorption layer. The radiation absorption layer may be configured to generate charge carriers therein from a radiation particle absorbed by the radiation absorption layer. The first electrode may be configured to generate an electric field in the radiation absorption layer. The first electrode may have a geometry shaping the electric field so that the electric field in an amplification region of the radiation absorption layer has a field strength sufficient to cause an avalanche of the charge carriers in the amplification region.

An image sensor includes an avalanche diode, an avalanche detector circuit, a sample and hold circuit, and a sample collection circuit. The avalanche diode has an output voltage that changes in response to an avalanche event in the avalanche diode. The avalanche detector circuit is configured to generate a sample capture signal in response to detecting the avalanche event. The sample and hold circuit is configured to store a sample of the output voltage in response to receiving the sample capture signal. The sample collection circuit is configured to collect the sample of the output voltage from the sample and hold circuit.

The present technology relates to a solid-state imaging apparatus and a driving method that can perform imaging at lower power consumption.

By providing the solid-state imaging apparatus including a pixel array section on which a plurality of SPAD pixels is two-dimensionally arranged, in which in a case where illuminance becomes first illuminance higher than reference illuminance, a part of the SPAD pixels of the plurality of pixels arranged on the pixel array section is thinned, it is possible to image at lower power consumption. The present technology can be applied to an image sensor, for example.

A diode and a transistor are connected in parallel. The transistor is located on a first doped region forming a PN junction of the diode with a second doped region located under the first region. The circuit functions as an ionizing radiation detection cell by generating a current through the PN junction which changes by a voltage generated across the transistor. This change in voltage is compared to a threshold to detect the ionizing radiation.

A radiation image scanner that reads a radiation image from an imaging plate, the radiation image scanner including: a stage that holds the imaging plate; an excitation light source that irradiates the imaging plate held by the stage with excitation light; and a photodetector that detects light emitted from the imaging plate by the excitation light, in which the stage includes: a stage body that includes a supporting surface capable of being brought into surface contact with a back surface of the imaging plate; and a positioning mechanism that includes a positioning surface being in contact with an edge portion of the imaging plate supported on the supporting surface and positioning the edge portion from outside along the supporting surface while pressing the edge portion against the supporting surface.

Disclosed herein is a radiation detector, comprising: an avalanche photodiode (APD) with a first side coupled to an electrode and configured to work in a linear mode; a capacitor module electrically connected to the electrode and comprising a capacitor, wherein the capacitor module is configured to collect charge carriers from the electrode onto the capacitor; a current sourcing module in parallel to the capacitor, the current sourcing module configured to compensate for a leakage current in the APD and comprising a current source and a modulator; wherein the current source is configured to output a first electrical current and a second electrical current; wherein the modulator is configured to control a ratio of a duration at which the current source outputs the first electrical current to a duration at which the current source outputs the second electrical current.

The low-penetrating particles low gain avalanche detector comprises a multi-layered structure and receives particles from a radiation source (13). It consists of a thin entry region that receives the particles from the radiation source (13); a low-penetrating particles detection region, with a p++ shallow field stop (1), positioned beneath the entry region, and a p absorption layer (3), positioned beneath the p++ shallow field stop (1), and an n multiplication layer (4); and a high-penetrating particles detection region positioned beneath the n multiplication layer (4), consisting of a n-- silicon substrate (5). Due to the chosen doping polarities, the primary electrons (created by the particles from the radiation source (13)) drift away from the entry region. That way, signals from low-penetrating particles or radiation experience amplification, while the noise is kept similar to a conventional PIN structure, thus increasing the signal-to-noise ratio.