Embodiments of the present disclosure are directed to a photonic implementation of a processor for keys update and hash generation for digital currency (e.g., bitcoin) transactions. The processor includes a first photonic circuit and a second photonic circuit coupled to the first photonic circuit via a set of optical connections. The first photonic circuit is configured to generate a plurality of new messages based at least in part on a plurality of input messages. During a plurality of operational cycles, the second photonic circuit is configured to receive, from the first photonic circuit via the set of optical connections, the plurality of new messages, and update a plurality of keys based at least in part on the received plurality of new messages. The second photonic circuit is further configured to generate at least one hash value based on the plurality of keys generated after the plurality of operational cycles.

Wavelength division multiplexing (WDM) has enabled telecommunication service providers to provide multiple independent multi-gigabit channels on one optical fiber. To meet demands for improved performance, increased integration, reduced footprint, reduced power consumption, increased flexibility, re-configurability, and lower cost monolithic optical circuit technologies and microelectromechanical systems (MEMS) have become increasingly important. However, further integration via microoptoelectromechanical systems (MOEMS) of monolithically integrated optical waveguides upon a MEMS provide further integration opportunities and functionality options. Such MOEMS may include MOEMS mirrors and optical waveguides capable of deflection under electronic control. In contrast to MEMS devices where the MEMS is simply used to switch between two positions the state of MOEMS becomes important in all transition positions. Improvements to the design and implementation of such MOEMS mirrors, deformable MOEMS waveguides, and optical waveguide technologies supporting MOEMS devices are presented where monolithically integrated optical waveguides are directly supported, moved and/or deformed by a MEMS.

Structures for an optical component of a photonics chip and methods of forming a structure for an optical component of a photonics chip. The structure includes a slotted waveguide component having a first and second waveguide cores over a dielectric layer. The first waveguide core separated from the second waveguide core by a slot. The structure further includes a third waveguide core over the dielectric layer. The third waveguide core is positioned in a different level relative to the dielectric layer than the slotted waveguide component, and the third waveguide core and the first slot have an overlapping arrangement

A semiconductor structure according to the present disclosure includes a buried oxide layer, a first dielectric layer disposed over the buried oxide layer, a first waveguide feature disposed in the first dielectric layer, a second dielectric layer disposed over the first dielectric layer and the first waveguide feature, a third dielectric layer disposed over the second dielectric layer, and a second waveguide feature disposed in the second dielectric layer and the third dielectric layer. The second waveguide feature is disposed over the first waveguide feature and a portion of the second waveguide feature vertically overlaps a portion of the first waveguide feature.

Structures and methods for high speed interconnection in photonic systems are described herein. In one embodiment, a photonic device is disclosed. The photonic device includes: a substrate; a plurality of metal layers on the substrate; a photonic material layer comprising graphene over the plurality of metal layers; and an optical routing layer comprising a waveguide on the photonic material layer.

Semiconductor devices and methods of forming the semiconductor devices are described herein. A method includes providing a first material layer between a second material layer and a semiconductor substrate and forming a first waveguide in the second material layer. The method also includes forming a photonic die over the first waveguide and forming a first cavity in the semiconductor substrate and exposing the first layer. Once formed, the first cavity is filled with a first backfill material adjacent the first layer. The methods also include electrically coupling an electronic die to the photonic die. Some methods include packaging the semiconductor device in a packaged assembly.

A silicon on insulator (SOI) photonic device having a waveguide is provided that includes a mode overlap portion with a topology optimized structure situated below an electrode of the capacitance structure. The device can significantly change a refractive index in a volume of mode overlap depending upon the applied potential to the capacitor and allows for a π phase shift in a modest mode overlap volume. The topology optimized structure has a waveguide and substrate that are partitioned in three dimensions using an extruded projection design. The electrode is a transition metal di-chalcogenide monolayer sheet (2D TMD). The enhanced mode overlay from the topology optimized waveguide portion allows a large reduction in the length of the waveguide with the mode overlap to achieve the needed phase shift for a photonic device.

A method includes forming a layer made of a first insulating material on a first layer made of a second insulating material that covers a support, defining a waveguide made of the first material in the layer of the first material, covering the waveguide made of the first material with a second layer of the second material, planarizing an upper surface of the second layer of the second material, and forming a single-crystal silicon layer over the second layer.

A photonic chip including an optical coupler capable of transferring an optical signal between a first waveguide made of III-V material and a second waveguide made of silicon, this optical coupler including a first extension made of III-V material which extends the core of the first waveguide, a second extension made of silicon which extends the core of the second waveguide, and a SiGe inclusion buried inside of the second extension, this inclusion being made of SiGe whose chemical formula is Si.sub.1-xGe.sub.x, where x is in the range between 0.2and 0.5, and being optically coupled, on a first side, to the first waveguide and, on a second opposite side, to the second waveguide.

Structures including an edge coupler and methods of fabricating a structure including an edge coupler. The structure includes a first waveguide core having a first inverse taper, a second waveguide core having a second inverse taper, and a third waveguide core having a third inverse taper that is laterally positioned between the first inverse taper and the second inverse taper. The structure further includes a fourth waveguide core having a fourth inverse taper that is positioned to overlap with the first inverse taper, and a fifth waveguide core having a fifth inverse taper that is positioned to overlap with the second inverse taper.