An optical waveguide package includes a substrate including a first surface and a second surface opposite to the first surface, a cladding located on the second surface and including a third surface facing the second surface, a fourth surface opposite to the third surface, and an element-receiving portion with an opening in the fourth surface, a core located in the cladding and extending from the element-receiving portion, and a first metal member located in the element-receiving portion in a plan view as viewed in a direction toward the fourth surface and including an element mount. The first metal member is connected to a second metal member with a first via conductor extending through the substrate from the first surface to the second surface.

There is set forth herein a method including building a first photonics structure using a first wafer having a first substrate, wherein the building the first photonics structure includes integrally fabricating within a first photonics dielectric stack one or more photonics device, the one or more photonics device formed on the first substrate; building a second photonics structure using a second wafer having a second substrate, wherein the building the second photonics structure includes integrally fabricating within a second photonics dielectric stack a laser stack structure active region and one or more photonics device, the second photonics dielectric stack formed on the second substrate; and bonding the first photonics structure and the second photonics structure to define an optoelectrical system having the first photonics structure bonded the second photonics structure.

An electronic package structure is provided. The electronic package structure includes a first carrier, a first electronic component, a first optical channel, and a second electronic component. The first electronic component is disposed on or within the first carrier. The first optical channel is disposed within the first carrier. The first optical channel is configured to provide optical communication between the first electronic component and the second electronic component. The first carrier is configured to electrically connect the first electronic component.

A large single-photon avalanche diode (SPAD) array is integrated with optical waveguide (WG) based devices. SPAD is a very sensitive optical detector fabricated on a semiconductor chip and WG structures are also built into the same chip. WG structures are configured to accumulate SPAD detection current. Together, they form an ultra-sensitive optical detector with high-speed response and a large aperture.

An optical waveguide type photodetector includes a first semiconductor layer of a first conductive type, a multiplication layer of a first conductive type on the first semiconductor layer, an optical waveguide structure, and a photodiode structure. The photodiode structure has a third semiconductor layer of a second conductive type, an optical absorption layer of an intrinsic conductive type or of a second conductive type, and a second semiconductor layer of a second conductive type. The optical waveguide structure includes an optical waveguiding core layer and a cladding layer. An end face of the photodiode structure located in a second region of the first semiconductor layer and an end face of the optical waveguide structure located in a first region of the first semiconductor layer are in contact.

An optical waveguide substrate includes: a substrate; a clad disposed on a plane of the substrate and made of a transparent material; and a plurality of cores that are surrounded by the clad, extend in parallel with the plane of the substrate and are made of a transparent material having a refractive index different from a refractive index of the clad, the cores including at least a pair of cores with diameters different from each other. The cores are provided at positions where centers of sections of the cores are all positioned in a straight line.

A photonic integrated circuit (PIC) includes a semiconductor substrate, one or more passive components, and one or more active components. The one or more passive components are fabricated on the semiconductor substrate, wherein the passive components are fabricated in a III-V type semiconductor layer. The one or more active components are fabricated on top of the one or more passive components, wherein optical signals are communicated between the one or more active components via the one or more passive components.

Embodiments herein describe using a double wafer bonding process to form a photonic device. In one embodiment, during the bonding process, an optical element (e.g., a high precision optical element) is optically coupled to an optical device in an active surface layer. In one example, the optical element comprises a nitride layer which can be patterned to form a nitride waveguide, passive optical multiplexer or demultiplexer, or an optical coupler.

A multi-level semiconductor device, the device including: a first level including integrated circuits; a second level including a structure designed to conduct electromagnetic waves, where the second level is disposed above the first level, where the integrated circuits include single crystal transistors; and an oxide layer disposed between the first level and the second level, where the integrated circuits include at least one processor, where the second level is bonded to the oxide layer, and where the bonded includes oxide to oxide bonds.

A light detection and ranging system can employ a metal insulator metal tunnel junction positioned atop a substrate. Activation of the metal insulator metal tunnel junction by a signal from a controller can generate light via inelastic scattering. Light to be used to detect downrange targets can be combined from multiple junctions via a multimode interference combiner.