Disclosed is a micro-optical interconnect component including an optical platform including, arranged onto a substrate, at least one optical alignment structure fixing an optical component and/or arranged as alignment structure to adapt another interconnect component. The optical platform includes a light deflecting element, having a total volume of less than 1 mm3, and made of a material having a refractive index higher than 1. The light deflecting element includes a face, facing the optical alignment structure, and has a curved reflecting surface so that an incident light beam onto the first face is deflected by an angle between 60° and 120°, the incident light beam may be provided from the outside or the inside of the substrate. Also disclosed are optical devices including at least one optical interconnect component and to optical systems including at least one optical device, as well as a batch fabrication process of the optical interconnect component

A temperature compensation method for wavelength monitoring using spectrometers on photonic integrated chips and a related temperature-compensated wavelength monitoring device include an optical filter of the chip filters a source signal to provide at least one spectral reference line to a first spectrometer to detect thermal wavelength drifts thereof. At least one spectral line to be monitored is received by the same or another spectrometer of the chip to detect wavelength shifts thereof. The detected thermal drift of the reference line is compared to calibrated thermal drifts for the reference line which is associated with a calibrated thermal drift for the spectral response curve of the spectrometer receiving the spectral line to be monitored. A thermal drift rate for the response curve of the optical filter differs from a thermal drift rate for the response curve of the first spectrometer at least by an amount.

A package includes an interposer structure including a first via; a first interconnect device including conductive routing and which is free of active devices; an encapsulant surrounding the first via and the first interconnect device; and a first interconnect structure over the encapsulant and connected to the first via and the first interconnect device; a first semiconductor die bonded to the first interconnect structure and electrically connected to the first interconnect device; and a first photonic package bonded to the first interconnect structure and electrically connected to the first semiconductor die through the first interconnect device, wherein the first photonic package includes a photonic routing structure including a waveguide on a substrate; a second interconnect structure over the photonic routing structure, the second interconnect structure including conductive features and dielectric layers; and an electronic die bonded to and electrically connected to the second interconnect structure.

A metal-oxide semiconductor (MOS) structure to achieve a LIDAR beam steering, comprising: a n-number of waveguides, wherein the n-number of waveguides are connected to a laser transmitter and a receiver; a n-number phase shifters; wherein the MOS structure comprises a doping concentration of an N-drift region that is varied and a different drain-source current (IDS) to gate-source voltage (VGS) or drain-source voltage (VDS) characteristics are obtained, and wherein the IDS exists when the VGS is positive, and a magnitude of the IDS depends on a magnitude of the VGS and the VDS apart from the doping concentration of N− drift region, wherein the n-number of waveguides are connected to a laser transmitter and a receiver device, wherein the VGS is used as a control signal, wherein the VDS is set to a power supply voltage (VDD) based on at least one doping profile of the N-drift region of the MOS structure, wherein a plurality of different drain-to-source currents (IDS) are provided through the n-number of phase shifters, and wherein with a set of specified drain currents (IDS), a phase is shifted differently by the n-number of phase shifters and the beam is steered in a specified direction, and wherein only one control signal is used to achieve beam steering.

A robust conjugate symmetric optical apparatus is disclosed. The robust conjugate symmetric optical apparatus comprises a first optical cell set and a second optical cell set. The first optical cell set includes a first plurality of cells, each of which includes a first left half cell and a first right half cell, and the respective first right half cell and the corresponding first left half cells form a first symmetric structure therebetween. The second optical cell set includes a second plurality of cells, each of which includes a second left half cell and a second right half cell, and the respective second right half cell and the corresponding second left half cells form a second symmetric structure therebetween, wherein each of the first left half cells of the first optical cell set and each of the second right half cells of the second optical cell set have the same structure; and each of the first right half cells of the first optical cell set and each of the second left half cells of the second optical cell set have the same structure.

One example system comprises a substrate and a waveguide disposed on the substrate to define an optical path on the substrate. The waveguide is configured to guide, inside the waveguide and along the optical path, a light signal toward an edge of the waveguide. The edge defines an optical interface between the waveguide and a fluidic optical medium adjacent to the edge of the waveguide. The system also includes an optical fluid and a fluid actuator configured to adjust a physical state of the optical fluid based on a control signal. The adjustment of the physical state of the optical fluid causes an adjustment of the fluidic optical medium adjacent to the edge.

A device includes a photonic routing structure including a silicon waveguide, photonic devices, and a grating coupler, wherein the silicon waveguide is optically coupled to the photonic devices and to the grating coupler; an interconnect structure on the photonic routing structure, wherein the grating coupler is configured to optically couple to an external optical fiber disposed over the interconnect structure; and computing sites on the interconnect structure, wherein each computing site includes an electronic die bonded to the interconnect structure, wherein each electronic die of the computing sites is electrically connected to a corresponding photonic device of the photonic devices.

There is provided an optical waveguide device including: a substrate; an optical waveguide formed on the substrate; and a working electrode that controls a light wave propagating through the optical waveguide, in which the working electrode includes a first base layer made of a first material, a first conductive layer on the first base layer, a second base layer made of a second material different from the first material, which is on the first conductive layer, and a second conductive layer on the second base layer, and an edge of the second base layer is covered with the second conductive layer, in a cross-section perpendicular to an extending direction of the optical waveguide.

A grating coupler integrated in a photonically-enabled circuit and a method for fabricating the same are disclosed herein. In some embodiments, the grating coupler includes a substrate comprising a silicon wafer, a first grating region etched into the substrate, wherein the first grating region comprises a first plurality of gratings having a first predetermined height, and a second grating region etched into the substrate, wherein the second grating region comprises a second plurality of gratings having a second predetermined height and wherein the first and second predetermined heights are not identical.

A semiconductor device includes a substrate. The semiconductor device further includes a waveguide on a first side of the substrate. The semiconductor device further includes a photodetector (PD) on a second side of the substrate, opposite the first side of the substrate. The semiconductor device further includes an optical through via (OTV) optically connecting the PD with the waveguide, wherein the OTV extends through the substrate from the first side of the substrate to the second side of the substrate.