A method includes providing a semiconductor wafer that includes at least one optical waveguide extending in a longitudinal direction. Stealth dicing laser processing is applied to the semiconductor wafer by producing defect regions into the wafer along at least one cutting line. The cutting line is oblique to the longitudinal direction of the at least one optical waveguide. The wafer is expanded to induce fracture thereof at the at least one cutting line, thereby producing an end surface of the at least one optical waveguide. The end surface is oblique to the longitudinal direction of the at least one optical waveguide.

The present disclosure relates to packaging of integrated circuit chips for semiconductor devices. More particularly, the present disclosure relates to packaging of multiple chips for silicon photonics devices. The present disclosure provides a semiconductor device including a photonic integrated circuit (PIC) chip, an inductor positioned over the PIC chip, and a transimpedance amplifier (TIA) chip positioned over the PIC chip. The inductor has a first terminal end and a second terminal end, and the first terminal end is connected to the PIC chip.

An example of a printed structure comprises a target substrate and a structure protruding from a surface of the target substrate. A component comprising a component substrate separate and independent from the target substrate is disposed in alignment with the structure on the surface of the target substrate within 1 micron of the structure. An example method of making a printed structure comprises providing the target substrate with the structure protruding from the target substrate, a transfer element, and a component adhered to the transfer element. The component comprises a component substrate separate and independent from the target substrate. The transfer element and adhered component move vertically toward the surface of the target substrate and horizontally towards the structure until the component physically contacts the structure or is adhered to the surface of the target substrate. The transfer element is separated from the component.

An optoelectronic device and method of manufacturing the same. The device includes: a layer disposed above a substrate, the layer having a first cavity therein, which cavity is at least partially defined by an inclined interface between the cavity and an insulating liner, the interface being disposed at an angle relative to the substrate of greater than 0 and less than or equal to 90; and a regrown semiconductor material, providing or forming a part of a waveguide, the regrown semiconductor material being at least partly disposed in the first cavity and including an inclined interface between the regrown semiconductor material and the insulating liner, the interface being disposed at an angle relative to the substrate of greater than 0 and less than or equal to 90.

The present disclosure relates to packaging of integrated circuit chips for semiconductor devices. More particularly, the present disclosure relates to packaging of multiple chips for silicon photonics devices. The present disclosure provides a semiconductor device including a photonic integrated circuit (PIC) chip, an inductor positioned over the PIC chip, and a transimpedance amplifier (TIA) chip positioned over the PIC chip. The inductor has a first terminal end and a second terminal end, and the first terminal end is connected to the PIC chip.

The invention concerns a method of manufacturing a modulated optically diffractive grating and a corresponding grating. The method comprises providing a substrate and manufacturing a plurality of temporary elements onto the substrate, the temporary elements being arranged in a periodic pattern comprising at least two periods having different element characteristics. Next, a first deposition layer is deposited so as to at least partially cover the temporary elements with the first deposition layer and the temporary elements are removed from the substrate in order to form onto the substrate a modulated diffractive grating of first grating elements made of the first deposition layer, the pattern comprising within each period a plurality of first grating elements and one more gaps between the first grating elements. The invention allows for producing high-quality gratings with locally varying diffraction efficiency.

The application relates to radars, and provides a chip with a beamforming network based on a photonic crystal resonant cavity tree structure and a fabrication method thereof. The chip includes a beamforming network layer, including an incidence coupling grating, first to Nth photonic crystal resonant cavity combinations, first to (N+1)th optical waveguides and an emergence coupling grating which are successively connected; branches of each photonic crystal resonant cavity combination is an integral multiple of that of the previous photonic crystal resonant cavity combination, and two photonic crystal resonant cavity combinations are connected by an optical waveguide.

An optical waveguide formed at the same layer as that of a microscopic optical device and a spot size converter largely different in size are integrally formed. A semiconductor device has an optical waveguide part functioning as a spot size converter. The optical waveguide part includes a plurality of optical waveguide bodies penetrating through an interlayer insulation layer in the thickness direction.

A method for manufacturing an optical fiber includes: a coating step of forming a first layer by applying a first ultraviolet ray curable resin composition onto a glass fiber, and then, of forming a second layer by applying a second ultraviolet ray curable resin composition onto the first layer; a first irradiation step of curing the first layer and the second layer by irradiating the first layer and the second layer with an ultraviolet ray, and of obtaining the optical fiber including a primary resin layer and a secondary resin layer; and a second irradiation step of irradiating the optical fiber with an ultraviolet ray at an illuminance of less than or equal to one tenth of an illuminance in the first irradiation step for an irradiation time of longer than or equal to 10 times an irradiation time in the first irradiation step.

According to one embodiment, a waveguide element includes a first crystal region, and a second crystal region. The first crystal region extends in a first direction and includes a first nitride semiconductor. The second crystal region extends in the first direction, includes a second nitride semiconductor, and is continuous with the first crystal region. A second direction crosses the first direction. The second direction is from the first crystal region toward the second crystal region. A <0001> direction of the first crystal region is from the first crystal region toward the second crystal region. A <0001> direction of the second crystal region is from the second crystal region toward the first crystal region.