A light conversion portion is constituted by a conversion material that converts infrared light to visible light. A reflection portion is fixed to a position on a main substrate at which the reflection portion faces an output end of an optical waveguide chip on the side from which light is output to an external space. The reflection portion includes a reflection surface that faces the output end and is inclined with respect to a plane of the main substrate such that a reflection direction is toward the upper side of the main substrate. The reflection surface reflects near infrared light.

A light conversion portion is constituted by a conversion material that converts infrared light to visible light. A reflection portion is fixed to a position on a main substrate at which the reflection portion faces an output end of an optical waveguide chip on the side from which light is output to an external space. The reflection portion includes a reflection surface that faces the output end and is inclined with respect to a plane of the main substrate such that a reflection direction is toward the upper side of the main substrate. The reflection surface reflects near infrared light.

An optical device includes a concave-convex structure layer having a concavo-convex structure on a surface thereof, the concavo-convex structure formed of a plurality of convexities or a plurality of concavities which are arranged with a sub-wavelength period, a high refractive index layer made of a material having a refractive index higher than that of the concavo-convex structure layer and located on the concavo-convex structure while having a surface conforming to the concavo-convex structure, and a low refractive index layer made of a material having a refractive index lower than that of the high refractive index layer and located on the high refractive index layer. The high refractive layer includes first grating high refractive index portions located at a bottom of the concavo-convex structure to form a first sub-wavelength grating, and second grating high refractive index portions located at a top of the concavo-convex structure to form a second sub-wavelength grating.

An optical device includes a concave-convex structure layer having a concavo-convex structure on a surface thereof, the concavo-convex structure formed of a plurality of convexities or a plurality of concavities which are arranged with a sub-wavelength period, a high refractive index layer made of a material having a refractive index higher than that of the concavo-convex structure layer and located on the concavo-convex structure while having a surface conforming to the concavo-convex structure, and a low refractive index layer made of a material having a refractive index lower than that of the high refractive index layer and located on the high refractive index layer. The high refractive layer includes first grating high refractive index portions located at a bottom of the concavo-convex structure to form a first sub-wavelength grating, and second grating high refractive index portions located at a top of the concavo-convex structure to form a second sub-wavelength grating.

Disclosed are apparatus and methods for optical interconnections that include the integration of a photonics die @Die) and an electronic die (eDie) with a socket layer, waveguides and fiber connectors to enable high bandwidth communications. In one embodiment, an exemplary optical interconnect device includes an electronic die coupled to a photonics die and integrated with a substrate, a socket, a board, a pair of micro-lenses and a mirror coupled to a waveguide, which can be embedded in the board. In another embodiment, the waveguide is embedded in a socket layer and coupled to a fiber connector. In these embodiments, the exemplary optical interface device can be coupled one more other optical interconnect devices via a waveguide array and/or a fiber array.

Disclosed are apparatus and methods for optical interconnections that include the integration of a photonics die @Die) and an electronic die (eDie) with a socket layer, waveguides and fiber connectors to enable high bandwidth communications. In one embodiment, an exemplary optical interconnect device includes an electronic die coupled to a photonics die and integrated with a substrate, a socket, a board, a pair of micro-lenses and a mirror coupled to a waveguide, which can be embedded in the board. In another embodiment, the waveguide is embedded in a socket layer and coupled to a fiber connector. In these embodiments, the exemplary optical interface device can be coupled one more other optical interconnect devices via a waveguide array and/or a fiber array.

A flexible optical waveguide board and a method of manufacturing the same are provided. The flexible optical waveguide board includes: a flexible substrate, wherein a surface of a side of the flexible substrate is a rough surface; an optical waveguide, disposed on the rough surface of the flexible substrate; a cover layer, disposed on a surface of a side of the optical waveguide away from the flexible substrate. In this way, structural reliability and environmental ageing resistance of the flexible optical waveguide board is improved.

A flexible optical waveguide board and a method of manufacturing the same are provided. The flexible optical waveguide board includes: a flexible substrate, wherein a surface of a side of the flexible substrate is a rough surface; an optical waveguide, disposed on the rough surface of the flexible substrate; a cover layer, disposed on a surface of a side of the optical waveguide away from the flexible substrate. In this way, structural reliability and environmental ageing resistance of the flexible optical waveguide board is improved.

IC chip package with silicon photonic features integrated onto an interposer along with electrical routing redistribution layers. An active side of an IC chip may be electrically coupled to a first side of the interposer through first-level interconnects. The interposer may include a core (e.g., of silicon or glass) with electrical through-vias extending through the core. The redistribution layers may be built up on a second side of the interposer from the through-vias and terminating at interfaces suitable for coupling the package to a host component through second-level interconnects. Silicon photonic features (e.g., of the type in a photonic integrated circuit chip) may be fabricated within a silicon layer of the interposer using high temperature processing, for example of 350° C., or more. The photonic features may be fabricated prior to the fabrication of metallized redistribution layers, which may be subsequently built-up within dielectric material(s) using lower temperature processing.

IC chip package with silicon photonic features integrated onto an interposer along with electrical routing redistribution layers. An active side of an IC chip may be electrically coupled to a first side of the interposer through first-level interconnects. The interposer may include a core (e.g., of silicon or glass) with electrical through-vias extending through the core. The redistribution layers may be built up on a second side of the interposer from the through-vias and terminating at interfaces suitable for coupling the package to a host component through second-level interconnects. Silicon photonic features (e.g., of the type in a photonic integrated circuit chip) may be fabricated within a silicon layer of the interposer using high temperature processing, for example of 350° C., or more. The photonic features may be fabricated prior to the fabrication of metallized redistribution layers, which may be subsequently built-up within dielectric material(s) using lower temperature processing.