An optical modulator includes: a ferroelectric substrate in which an input optical waveguide, a pair of branched optical waveguides, and an output optical waveguide are formed; a signal electrode that is formed in a vicinity of at least one of the pair of branched optical waveguides; a first protection member that is attached to an input end of the ferroelectric substrate in which the input optical waveguide is formed; and a second protection member that is attached to an output end of the ferroelectric substrate in which the output optical waveguide is formed. The first protection member and the second protection member have a Mohs hardness that is less than or equal to a Mohs hardness of the ferroelectric substrate, and are formed of a glass material that does not have a pyroelectric effect.

A Mueller-matrix microscope, including: a polarizing unit and an analyzing unit. The polarizing unit is configured to modulate a light beam emitted from an external light source module to yield a polarized light beam, and then to project the polarized light beam on the surface of a sample to be measured. The analyzing unit is configured to analyze the polarization state of a light beam reflected from the surface of the sample, to acquire information of the sample. The analyzing unit includes a polarization state analyzer (PSA) and a backside reflection suppression (BRS) unit. The PSA unit is configured to demodulate the polarization state of the light beam; and the BRS unit is configured to suppress the backside reflections from transparent substrate.

An electro-optic element includes a first waveguide, which is a plasmonic waveguide, including a first core having a ferroelectric material and a cladding having a first cladding portion. The first cladding portion includes, at a first interface with the ferroelectric material, a first cladding material. The electro-optic element includes a first and a second electrode for producing an electric field in the ferroelectric material when a voltage is applied between the first and second electrodes, for modulating a real part of a refractive index of the ferroelectric material. The element includes, in addition, a crystalline substrate on which the ferroelectric material is epitaxially grown with zero or one or more intermediate layers present between the substrate and the ferroelectric material. The element may have a second waveguide, which is a photonic waveguide, including for enabling evanescent coupling between the first and second waveguides.

An optical modulator includes: a ferroelectric substrate in which an input optical waveguide, a pair of branched optical waveguides, and an output optical waveguide are formed; a signal electrode that is formed in a vicinity of at least one of the pair of branched optical waveguides; a first protection member that is attached to an input end of the ferroelectric substrate in which the input optical waveguide is formed; and a second protection member that is attached to an output end of the ferroelectric substrate in which the output optical waveguide is formed. The first protection member and the second protection member have a Mohs hardness that is less than or equal to a Mohs hardness of the ferroelectric substrate, and are formed of a glass material that does not have a pyroelectric effect.

An optical modulator includes an optical modulator chip configured to optically modulate an optical signal using an electrical signal input thereto; and a relay substrate configured to relay and couple the electrical signal to the optical modulator chip. The optical modulator chip includes a signal electrode and a ground electrode for the electrical signal, formed along a waveguide for the optical signal. One end of the optical modulator chip is arranged to face the relay substrate. An electrode connection portion coupling the electrical signal to the relay substrate by wire is provided at the one end. A distance between a tip of one end of the signal electrode in the electrode connection portion and the end of the optical modulator chip is less than a distance between a tip of an end of the ground electrode in the electrode connection portion and the end of the optical modulator chip.

The present invention relates to an Electro-Optical (E-O) crystal elements, their applications and the processes for the preparation thereof More specifically, the present invention relates to the E-O crystal elements (which can be made from doped or un-doped PMN-PT, PIN-PMN-PT or PZN-PT ferroelectric crystals) showing super-high linear E-O coefficient .sub.c, e.g., transverse effective linear E-O coefficient .sup.T.sub.c , more than 1100 pm/V and longitudinal effective linear E-O coefficient .sup.l.sub.c up to 527 pm/V, which results in a very low half-wavelength voltage V.sup.l.sub. below 200V and V.sup.T.sub. below about 87V in a wide number of modulation, communication, laser, and industrial uses.

An electro-optical device is fabricated on a semiconductor-on-insulator (SOI) substrate. The electro-optical device comprises a silicon dioxide layer, and an active layer having ferroelectric properties on the silicon dioxide layer. The silicon dioxide layer includes a first silicon dioxide layer of the SOI substrate and a second silicon dioxide layer converted from a silicon layer of the SOI substrate. The active layer includes a buffer layer epitaxially grown on the silicon layer of the SOI substrate and a ferroelectric layer epitaxially grown on the buffer layer. The electro-optical device further comprises one or more additional layers over the active layer, and first and second contacts to the active layer through at least one of the one or more additional layers. Methods of fabricating the electro-optical device are also described herein.

The present invention relates to an Electro-Optical (E-O) crystal elements, their applications and the processes for the preparation thereof. More specifically, the present invention relates to the E-O crystal elements (which can be made from doped or un-doped PMN-PT, PIN-PMN-PT or PZN-PT ferroelectric crystals) showing super-high linear E-O coefficient .sub.c, e.g., transverse effective linear E-O coefficient .sup.T.sub.c more than 1100 pm/V and longitudinal effective linear E-O coefficient .sup.l.sub.c up to 527 pm/V, which results in a very low half-wavelength voltage V.sup.l.sub. below 200V and V.sup.T.sub. below about 87V in a wide number of modulation, communication, laser, and industrial uses.

The present invention concerns a method for producing at least one ferroelectric device or structure comprising the steps of providing at least one ferroelectric material or layer, or providing at least one ferroelectric material or layer to be patterned or structured; depositing at least one adhesion layer on a first side of the at least one ferroelectric material or layer; and depositing at least one diamond-like carbon layer or material on the at least one adhesion layer.

A liquid crystal panel comprises an array substrate and an opposing substrate that is opposite to the array substrate; a polymer dispersed blue phase layer configured to serve as an alignment layer is formed on the array substrate; and at least two electrodes are provided on the array substrate. The liquid crystal panel can omit a rubbing process for an alignment layer on a side of an array substrate, and resolve the problem of the dark-state light leakage of the liquid crystal panel. A method of manufacturing a liquid crystal panel is further disclosed.