An electro-optical device is fabricated on a semiconductor-on-insulator (SOI) substrate. The electro-optical device comprises a silicon dioxide layer, and an active layer having ferroelectric properties on the silicon dioxide layer. The silicon dioxide layer includes a first silicon dioxide layer of the SOI substrate and a second silicon dioxide layer converted from a silicon layer of the SOI substrate. The active layer includes a buffer layer epitaxially grown on the silicon layer of the SOI substrate and a ferroelectric layer epitaxially grown on the buffer layer. The electro-optical device further comprises one or more additional layers over the active layer, and first and second contacts to the active layer through at least one of the one or more additional layers. Methods of fabricating the electro-optical device are also described herein.

A substrate configured for an electro-optic device and an electro-optic device formed using the substrate are described. The substrate includes a semiconductor substrate, an insulating layer, and at least one thin film optical material. The semiconductor substrate includes a trap-rich layer and an underlying substrate layer. The insulating layer is on the semiconductor substrate, The trap-rich layer is between the underlying substrate layer and the insulating layer. The thin film optical material(s) have an electro-optic effect and are on the insulating layer.

A system includes a classical computing system and one or more quantum computing chips coupled to the classical computing system. The one or more quantum computing chips includes one or more electro-optic devices. Each electro-optic device includes a substrate, a waveguide disposed on top of the substrate, and a layer stack disposed on top of the waveguide and including a plurality of electro-optic material layers interleaved with a plurality of interlayers. Each electro-optic device further comprising a waveguide core disposed on top of a portion of the layer stack. The plurality of interlayers are characterized by a first lattice structure and the plurality of electro-optic material layers are under tensile stress and are characterized by a second lattice structure and crystallographic phase.

An electro-optic device includes a substrate, a buffer layer coupled to the substrate, and a first layer stack coupled to the buffer layer. The first layer stack includes a plurality of electro-optic material layers and a plurality of interlayers interleaved with the plurality of electro-optic material layers. The electro-optic device also includes a cladding layer coupled to the first layer stack.

One embodiment of the disclosure is an electro-optical modulator system. The system may include a ferroelectric material having one or more crystal orientation axes and a Mach-Zehnder interferometer (MZI) modulator comprising an MZI input, an MZI output, a first arm and a second arm, wherein the first arm and the second arm are in optical communication with the MZI input and the MZI output. The ferroelectric material may define or be in communication with a portion of the first arm and the second arm. The first arm may have a first phase parameter and the second arm may have a second phase parameter. The arms may have domain orientations that differ. A portion of the first arm may include a portion of one or more loading layers and a portion of the second arm may include a portion of one or more loading layers.

A substrate configured for an electro-optic device and an electro-optic device formed using the substrate are described. The substrate includes a semiconductor substrate, an insulating layer, and at least one thin film optical material. The semiconductor substrate includes a trap-rich layer and an underlying substrate layer. The insulating layer is on the semiconductor substrate, The trap-rich layer is between the underlying substrate layer and the insulating layer. The thin film optical material(s) have an electro-optic effect and are on the insulating layer.