An object of the present invention is to provide an optical waveguide device capable of appropriately setting a joint relationship between an optical waveguide substrate and a reinforcing member. An optical waveguide device includes an optical waveguide substrate 1 (11) provided with an optical waveguide 10; and a reinforcing member 2 disposed on an upper side of the optical waveguide near an end portion of the optical waveguide, the optical waveguide substrate and the reinforcing member being joined through an adhesive layer AD, in which a plurality of structures are disposed between the optical waveguide substrate and the reinforcing member to interpose the optical waveguide between the plurality of structures, for a first structure ST1, the adhesive layer is disposed between an upper surface of the structure and the reinforcing member, and the first structure ST1 has a ratio of an area of the upper surface to an area of a lower surface of the reinforcing member being set to be equal to or more than a predetermined ratio, and a second structure ST2 is configured to set a thickness of the adhesive layer disposed between the first structure and the reinforcing member within a predetermined range.

In some implementations, an electro-optical device includes a multi-mode interferometer (MMI) variable optical attenuator (VOA), comprising: an input to receive an optical beam; an output to output the optical beam; and an optical waveguide to couple the input to the output, wherein the optical waveguide is configured to self-image the optical beam within the optical waveguide; and a control component to apply a forward voltage across the MMI VOA to control attenuation of the MMI VOA.

Systems and techniques are described herein for using aluminum scandium nitride based electro-optical modulators. For example, a device or apparatus can include an optical waveguide comprising aluminum scandium nitride (AlScN) formed as part of a piezoelectric layer having an axis from a first side of the waveguide to a second side of the waveguide. The device or apparatus can further include an electrical signal line formed on the first side of the waveguide and a reference node formed on the second side of the waveguide.

There is provided an optical waveguide device including a substrate, an optical waveguide formed on the substrate, and a working electrode that controls a light wave propagating through the optical waveguide, in which the working electrode includes a first base layer made of a first material, and a first conductive layer on the first base layer, and a conductor pattern including a second base layer made of a second material different from the first material and a second conductive layer on the second base layer is formed in a region other than a path from an input end to an output end of the optical waveguide, in a region on the substrate.

An optical modulator with which electrical connection between a signal electrode and signal wiring of a wiring substrate can be reliably made even in a case where a width of the signal electrode in an action portion of an optical control substrate is narrow is provided. An optical modulator includes an optical control substrate (1) that includes an optical waveguide (OW) including at least a branched waveguide which branches one light wave into two light waves, and that includes a control electrode for applying an electrical field to the branched waveguide, and a wiring substrate provided with a wiring which relays an electrical signal to be applied to the control electrode or with a wiring which terminates the electrical signal, in which the control electrode is provided with a signal electrode(S), the wiring is provided with signal wiring, and in a part (Sc) in which electrical connection is made between the signal electrode(S) and the signal wiring, a clearance (W1) in which the branched waveguide (OW) sandwiches the signal electrode is wider than a clearance (W2) in which the branched waveguide sandwiches the signal electrode in an action portion in which the control electrode applies the electrical field to the branched waveguide.

A system-in-package includes: a photonic integrated circuit (PIC) including an active photonic component; and an electronic integrated circuit (EIC) stacked on the PIC, the EIC including: an electrical component electrically connected to a landing pad, and a copper pillar embedded in the landing pad and protruding from the landing pad that connects with the active photonic component such that the electrical component is electrically connected to the active photonic component. The landing pad has a larger surface area than a cross sectional area of the copper pillar, and wherein, when viewed from the EIC towards the PIC, the active photonic component on the PIC is offset from the landing pad of the EIC, wherein the offset is sufficient to keep a parasitic capacitance between the landing pad and the active photonic component within a pre-determined threshold level of tolerance.

A package comprises a photonic integrated circuit (PIC) with a modulator having a first modulator input, and a PIC interconnect region within two millimeters or fifty microns from the modulator. Additionally, an electric integrated circuit (EIC) is included with a driver circuit and an EIC interconnect region within two millimeters or fifty microns from the driver circuit. The driver circuit is electrically connected to the first modulator input via the EIC interconnect region, a first metal interconnect, and the PIC interconnect region. The modulator receives a temperature-dependent bias voltage, where the temperature dependence of the bias voltage inversely matches the temperature dependence of the modulator across an extended temperature range.

A package comprises a photonic integrated circuit (PIC) with a modulator having a first modulator input, and a PIC interconnect region within two millimeters or fifty microns from the modulator. Additionally, an electric integrated circuit (EIC) is included with a driver circuit and an EIC interconnect region within two millimeters or fifty microns from the driver circuit. The driver circuit is electrically connected to the first modulator input via the EIC interconnect region, a first metal interconnect, and the PIC interconnect region. The modulator receives a temperature-dependent bias voltage, where the temperature dependence of the bias voltage inversely matches the temperature dependence of the modulator across an extended temperature range.

A ring resonator in which a nonlinear effect is prevented from becoming apparent, and a method for manufacturing such a ring resonator are provided. A ring resonator according to the present disclosure includes an input waveguide, an output waveguide, and a ring waveguide including a first waveguide part optically connected to the input waveguide, a second waveguide part optically connected to the output waveguide, two curved waveguide parts each connecting the first and second waveguide parts to each other, and a heater disposed along a third waveguide part, the third waveguide part being a longer one of the two waveguide parts. Lengths of the two waveguide parts are different from each other. A first direction along the first waveguide part and a second direction along the second waveguide part are not parallel to each other.

A package includes a bridging element (an OMIB), and first and second photonic paths, forming a bidirectional photonic path. The OMIB has first and second interconnect regions to connect with one or more dies. Third and fourth unidirectional photonic paths may couple between the first interconnect region and an optical interface (OI). A photonic transceiver has a first portion in the OMIB and a second portion in one of the dies. The first and the second portions may be coupled via an electrical interconnect less than 2 mm in length. The die includes compute elements around a central region, proximate to the second portion. The OMIB may include an electro-absorption modulator fabricated with germanium, silicon, an alloy of germanium, an alloy of silicon, a III-V material based on indium phosphide (InP), or a III-V material based on gallium arsenide (GaAs). The OMIB may include a temperature compensation for the modulator.