An electro-optical modulator includes a substrate 201; an optical waveguide formed of a silicon-containing i-type amorphous semiconductor 204 on the substrate; and a silicon-containing p-type semiconductor layer 203 and a silicon-containing n-type semiconductor layer 205 arranged apart from each other with the silicon-containing optical waveguide formed of an i-type amorphous semiconductor 204 interposed therebetween and constituting optical waveguides together with the silicon-containing optical waveguide formed of an i-type amorphous semiconductor. The silicon-containing p-type semiconductor layer 203 and/or silicon-containing n-type semiconductor layer 205 area crystalline semiconductor layer.

A photonic system includes a light source and a photonic structure. The photonic structure includes an optical transmission structure and an optical absorption structure. The optical transmission structure is configured to transmit light associated with a first wavelength range. The optical absorption structure is configured to absorb light associated with a second wavelength range. The light source is configured to provide a light beam with a wavelength that is within the second wavelength range to the optical absorption structure. The optical absorption structure is configured to generate and provide heat to the optical transmission structure when the light beam falls incident on the optical absorption structure.

An optical processing system providing a rapid optical response, the system including: a first optical material sensitive to an effective refractive index change under photon absorption; a first optical pump for optically pumping the first optical material at a first frequency so as to cause the first optical material to undergo an effective refractive index change by means of photon absorption; a second optical pump for optically pumping the first optical material at a second frequency so as to cause the first optical material to undergo a rapid second refractive index change by means of stimulated emission.

An optical device may include at least two waveguides with different propagation constants. Each waveguide is associated with a grating antenna with a grating period selected to emit light at the same emission angle despite the different propagation constants. Each waveguide may be part of an optical path that includes phase shifters. Additionally, the waveguides may be formed in a waveguide layer that is separate from a perturbation layer in which the grating antennas as formed.

An optical filter comprising a first distributed Bragg reflector (DBR) layer, a second DBR layer, and an intrinsic semiconductor layer positioned between the first DBR layer and the second DBR layer, with the intrinsic semiconductor layer providing a passband wavelength for the optical filter based on a carrier density of the intrinsic semiconductor layer.

Ring modulators based on interdigitated junctions may be driven in full or partial standing wave mode and, active regions (providing the modulation) and light-absorptive regions (e.g. providing electrical conduction) are placed in a pattern inside a resonant cavity in order to match the maxima and minima of the optical field, respectively. The pattern may be periodic to match the periodicity of a typical electromagnetic field which is periodic with the wavelength. It may also be aperiodic in the case that the cross-section or materials are engineered along the direction of propagation such that the propagation constant (and thus wavelength, i.e. optical wave “local periodicity”) change along the propagation direction.

The invention relates to a display device comprising a display plane, on which one or more planar display regions 10, 11 are arranged, said planar regions 10, 11 being covered by transparent coverings. A single transparent covering 3 covers all the planar display regions 10, 11 of the display device, is formed three-dimensionally on the viewer's side by regions of differing thicknesses and is connected on the side facing away from the viewer to the planar display regions 10, 11 by means of optical bonding. The refractive index of the material of the covering 3 corresponds to the refractive index of the optical-bonding material 8.

The present invention describes a semiconductor interferometric device capable of modulating an electromagnetic wave by modulating the carrier concentration inside a semiconductor device. The variation of the carrier concentration within the device causes the variation of the physical properties inside the semiconductor material leading to a shift of the reflected and absorbed spectrums. One or more rays are generated within the device so as to operate the device through interference effects. The present invention may be utilized for an antenna or for beam steering purposes comprising an array of semiconductor interferometric reflecting devices. Furthermore the same principle could be utilized to generate tunable meta-surfaces, so as to modulate phase, amplitude or polarization of an incident electromagnetic wave.

A multi-mode interferometric optical waveguide device includes: a multi-mode interferometric optical waveguide which includes a first reflective surface; a first single-mode waveguide connected to the multi-mode interferometric optical waveguide; and a second single-mode waveguide connected to the multi-mode interferometric optical waveguide and oppose the first reflective surface. Consequently, the multi-mode interferometric optical waveguide device can propagate light from the first single-mode waveguide to the second single-mode waveguide, with further reduced optical losses.

A light modulator for amplifying an intensity of incident light and modulating a phase of the incident light is provided. The light modulator includes: a first distributed Bragg reflector (DBR) layer having a first reflectivity and comprising at least two first refractive index layers that have different refractive indices from each other and are repeatedly alternately stacked; a second DBR layer having a second reflectivity and comprising at least two second refractive index layers that have different refractive indices from each other and are repeatedly alternately stacked; and an active layer disposed between the first DBR layer and the second DBR layer, and comprising a quantum well structure.