A coherent frequency modulated receiver for receiving and detecting arriving optical signals which comprises an electrically controllable optical beam scanner receiving optical input beams arriving at different angles in a field of view of the electrically controllable optical beam scanner, the electrically controllable optical beam scanner conveying a scanned optical input beam as its output optical beam; a grating coupler responsive to the output or reflected optical beam of the electrically controllable optical beams scanner, the grating coupler having a waveguided output; an optical local oscillator laser having a waveguided output; an FMCW signal generator; an optical modulator responsive to the optical waveguided outputs of the optical local oscillator laser and also to an electrical FMCW signal from the FMCW signal generator; a pair of second order non-linear optical elements for frequency upconverting respective outputs of the optical modulator and the grating coupler; and at least one photodiode optically coupled to an outputs of the pair of second order non-linear optical elements.

Apparatuses including integrated circuit (IC) optical assemblies and processes for operation of IC optical assemblies are disclosed herein. In some embodiments, the IC optical assemblies include a transmitter component to provide light output having a particular beam direction, and a transmitter driver component. The transmitter component includes a light source optically coupled to a plurality of waveguides, a plurality of gratings, and a plurality of phase tuners. The transmitter driver component causes a light provided by the light source to be centered at a particular wavelength and a particular phase to be induced by each phase tuner of the plurality of phase tuners on a respective waveguide of the plurality of waveguides, in accordance with a feedback signal, to generate the light output having the particular beam direction.

A semiconductor structure according to the present disclosure includes a buried oxide layer, a first dielectric layer disposed over the buried oxide layer, a first waveguide feature disposed in the first dielectric layer, a second dielectric layer disposed over the first dielectric layer and the first waveguide feature, a third dielectric layer disposed over the second dielectric layer, and a second waveguide feature disposed in the second dielectric layer and the third dielectric layer. The second waveguide feature is disposed over the second waveguide feature and a portion of the second waveguide feature vertically overlaps a portion of the first waveguide feature.

Provided is a quantum dot (QD) light modulator and an apparatus including the QD light modulator. The QD light modulator may include a QD-containing layer including QDs having light-emission characteristics, a refractive index change layer arranged adjacent to the QD-containing layer, and a reflector arranged facing the QD-containing layer. The refractive index change layer may include a carrier density change area in which a carrier density changes, and the carrier density change area may be arranged adjacent to the QD-containing layer. The light-emission characteristics of the QD-containing layer may be modulated according to a change in a property of the refractive index change layer. The QD light modulator may further include a nano-antenna structure arranged on the QD-containing layer.

An optical phase shifter and a method of making the same are disclosed. The phase shifter includes a substrate, a p-doped electrode and an n-doped electrode on the substrate, a first doped semiconductor layer on the p-doped electrode or the n-doped electrode and in electrical contact with the other electrode, a second doped semiconductor layer on the first doped semiconductor layer, a first vertical region electrically connecting the second doped semiconductor layer with the one electrode, and a cladding layer on or over the second semiconductor layer, the first vertical region, and at least a first sidewall of each of the first and second semiconductor layers. The p-doped electrode and the n-doped electrode form a p-n junction at an interface therebetween. The first and second doped semiconductor layers have the same doping type as the other electrode and the one electrode, respectively.

A bandpass filter may include a set of layers. The set of layers may include a first subset of layers. The first subset of layers may include hydrogenated germanium (Ge:H) with a first refractive index. The set of layers may include a second subset of layers. The second subset of layers may include a material with a second refractive index. The second refractive index may be less than the first refractive index.

A photonic system includes a light source and a photonic structure. The photonic structure includes an optical transmission structure and an optical absorption structure. The optical transmission structure is configured to transmit light associated with a first wavelength range. The optical absorption structure is configured to absorb light associated with a second wavelength range. The light source is configured to provide a light beam with a wavelength that is within the second wavelength range to the optical absorption structure. The optical absorption structure is configured to generate and provide heat to the optical transmission structure when the light beam falls incident on the optical absorption structure.

An optical modulator includes a dielectric layer and a waveguide. The waveguide is disposed on the dielectric layer. The waveguide includes an electrical coupling portion, a slab portion, and an optical coupling portion. The slab portion is directly in contact with both of the electrical coupling portion and the optical coupling portion. The slab portion has a first sub-portion and a second sub-portion connected to the first sub-portion. A top surface of the electrical coupling portion, a top surface of the first sub-portion, and a top surface of the second sub-portion are located at different level heights.

An optical phase shifter may include a waveguide core that has a top surface, and a semiconductor contact that is laterally displaced relative to the waveguide core and is electrically connected to the waveguide core. A top surface of the semiconductor contact is above the top surface of the waveguide core. The waveguide core may include a p-type core region and an n-type core region. A p-type semiconductor region may be in physical contact with the n-type core region of the waveguide core, and an n-type semiconductor region may be in physical contact with the p-type core region of the waveguide core. A phase shifter region and a light-emitting region may be disposed at different depth levels, and the light-emitting region may emit light from a phase shifter region that is in a position adjacent to the light-emitting region.

A light modulator of to this embodiment enables high-speed modulation to an SLM using a liquid crystal. The light modulator comprises refractive index regions arranged in a first direction on a reference plane, a region surrounding each refractive index regions and having a refractive index lower than that of each refractive index region, a first conductive film, and a second conductive film. The first conductive film is provided on any one of a pair of side surfaces arranged in the first direction in at least one refractive index region selected from the refractive index regions and belonging to a first group. The second conductive film is provided on any one of the pair of side surfaces so as not to overlap with the first conductive film in at least one refractive index region selected from the refractive index regions and belonging to a second group.