An optical pulse for an extreme ultraviolet (EUV) light source may be formed by illuminating a semiconductor material of a modulation system with a first light beam having a first wavelength; applying a voltage to the semiconductor material for a time duration, the applied voltage being sufficient to modify an index of refraction of the semiconductor material such that a polarization state of a light beam having a second wavelength passing through the semiconductor material is modified to pass through at least one polarization-based optical element of the modulation system; and forming an optical pulse by passing a second light beam having the second wavelength through the semiconductor material during the time duration.

There is described an optical phase modulator generally having a substrate; a waveguide mounted to the substrate and extending along a path of the substrate, the waveguide having a first series of phase shift units distributed along the waveguide, each phase shift unit having two Bragg gratings being spaced apart from one another along the path and a cavity between the two spaced-apart Bragg gratings; and a modulation circuit configured for driving a length of the series of phase shift units of the waveguide in accordance with a modulation signal thereby modulating a refractive index of the waveguide to induce a phase shift to an optical signal propagating along the waveguide.

A method of processing by controlling one or more beam characteristics of an optical beam may include: launching the optical beam into a first length of fiber having a first refractive-index profile (RIP); coupling the optical beam from the first length of fiber into a second length of fiber having a second RIP and one or more confinement regions; modifying the one or more beam characteristics of the optical beam in the first length of fiber, in the second length of fiber, or in the first and second lengths of fiber; confining the modified one or more beam characteristics of the optical beam within the one or more confinement regions of the second length of fiber; and/or generating an output beam, having the modified one or more beam characteristics of the optical beam, from the second length of fiber. The first RIP may differ from the second RIP.

To make it possible to more easily improve modulation efficiency in an optical modulator using a core made of an InP-based semiconductor. The optical modulator includes a lower cladding layer 102 formed on a substrate 101, a core 103 formed on the lower cladding layer 102, and an upper cladding layer 104 formed on the core 103. The core 103 is made of an InP-based semiconductor having a bandgap corresponding to a desired wavelength. Refractive indexes of the lower cladding layer 102 and upper cladding layer 104 are equal to or less than a refractive index of InP.

An optical modulator includes a dielectric layer and a waveguide. The waveguide is disposed on the dielectric layer. The waveguide has a first region, a second region, and an optical coupling region between the first region and the second region. The waveguide located in the first region includes a first electrical coupling portion and a first slab portion connected to each other. The waveguide located in the second region includes a second electrical coupling portion and a second slab portion connected to each other. The waveguide located in the optical coupling region includes a first optical coupling portion and a second optical coupling portion. The first slab portion has at least two sub-portions having different heights. The second slab portion has at least two sub-portions having different heights.

An optical transmission device includes: a substrate; a waveguide that is provided in the substrate and transmits an optical signal; a signal wiring that is provided in the substrate and transmits an electric signal; and a silicon wiring that is provided in the substrate and is silicon added with an impurity. The signal wiring is placed in an area of the substrate, the area being away from an end of the substrate by a predetermined distance or more. One end of the silicon substrate is connected to the signal wiring, and the other end of the silicon wiring extends to the end of the substrate.

An optoelectronic device comprising: a silicon-on-insulator (SOI) substrate, the substrate comprising: a silicon support layer; a buried oxide (BOX) layer on top of the silicon support layer; and a silicon device layer on top of the BOX layer; a waveguide region, where a portion of the silicon device layer and a portion of the BOX layer underneath the portion of the device layer have been removed, the portion of the BOX layer having been replaced with a layer of silicon and a layer of crystalline oxide on top of the silicon; and a waveguide structure located directly on top of the crystalline oxide layer, the waveguide structure including a P doped region, and an N doped region with an intrinsic region in-between, creating a PIN junction across which a bias can be applied to create a modulation region.

A silicon based electro-optically active device and method of producing the same, the device comprising: a silicon-on-insulator (SOI) waveguide; an electro-optically active stack within a cavity of the SOI waveguide, wherein the electro-optically active stack is separated from an insulator layer of the electro-optically active device by a seed layer; and a channel between the electro-optically active stack and the SOI waveguide; wherein the channel is filled with a filling material with a refractive index greater than that of a material forming a sidewall of the cavity to form a bridge-waveguide in the channel between the SOI waveguide and the electro-optically active stack.

In an embodiment, a method and apparatus for increasing bandwidth of an optical modulator by applying a first voltage applied to a beginning of a resistive line and applying a second voltage applied to an end of the resistive line; wherein the first voltage is less than the second voltage.

Disclosed herein are methods, apparatus, and systems for providing an optical beam delivery system, comprising an optical fiber including a first length of fiber comprising a first RIP formed to enable, at least in part, modification of one or more beam characteristics of an optical beam by a perturbation assembly arranged to modify the one or more beam characteristics, the perturbation assembly coupled to the first length of fiber or integral with the first length of fiber, or a combination thereof and a second length of fiber coupled to the first length of fiber and having a second RIP formed to preserve at least a portion of the one or more beam characteristics of the optical beam modified by the perturbation assembly within one or more first confinement regions. The optical beam delivery system may include an optical system coupled to the second length of fiber including one or more free-space optics configured to receive and transmit an optical beam comprising the modified one or more beam characteristics.