Patent classifications
G02F1/017
Color filters and devices including the same
A color filter including a first pixel (or color conversion region) that is configured to emit a first light and a display device including the color filter. The first pixel includes a (first) quantum dot composite (or a color conversion layer including the quantum dot composite), wherein the quantum dot composite may include a matrix and a plurality of quantum dots dispersed (e.g., randomly) in the matrix, wherein the plurality of the quantum dots exhibit a multi-modal distribution (e.g., a bimodal distribution) including a first peak particle size and a second peak particle size in a size analysis, wherein the second peak particle size is greater than the first peak particle size, and a difference between the first peak particle size and the second peak particle size is less than or equal to about 5 nanometers (nm) (e.g., less than or equal to about 4.5 nm).
LAYERED BODY AND DISPLAY DEVICE
There are provided a layered body and a display device including the same, the layered body including a substrate layer and a resin layer disposed on at least one surface of the substrate layer, in which the resin layer contains a light scattering agent (A), and, when the contact angle of the substrate layer with respect to diiodomethane is indicated by θs (°) and the contact angle of the resin layer with respect to diiodomethane is indicated by θr (°), the following formula: |θs - θr| ≤ 21 is satisfied.
Quantum dot display panel, quantum dot display device, and preparation method thereof
The present invention provides a quantum dot display panel, a quantum dot display device, and a preparation method thereof. The quantum dot display panel includes an array substrate, a color film substrate, and a liquid crystal disposed between the array substrate and the color film substrate, wherein the color film substrate includes a cover plate, a light-cutoff layer, a quantum dot pixel layer, a blocking layer, a reflection layer, a coating layer, a built-in polarizing layer, an isolation unit, and a polyimide (PI) layer.
Quantum rod, and light-emitting device, optical member, and apparatus, including the same
A quantum rod includes a nanoparticle, and at least one ligand linked to the surface of the nanoparticle and represented by Formula 1.
R.sub.1-(L.sub.1).sub.b1-(A.sub.1).sub.a1-(L.sub.2).sub.b2-(A.sub.2).sub.a2-(L.sub.3).sub.b3-T.sub.1. Formula 1 A light-emitting device, an optical member, and an apparatus, each includes the quantum rod.
Quantum rod, and light-emitting device, optical member, and apparatus, including the same
A quantum rod includes a nanoparticle, and at least one ligand linked to the surface of the nanoparticle and represented by Formula 1.
R.sub.1-(L.sub.1).sub.b1-(A.sub.1).sub.a1-(L.sub.2).sub.b2-(A.sub.2).sub.a2-(L.sub.3).sub.b3-T.sub.1. Formula 1 A light-emitting device, an optical member, and an apparatus, each includes the quantum rod.
Reprogrammable quantum processor architecture
A novel and useful quantum computing machine includes classic computing and quantum computing cores. A programmable pattern generator executes instructions that control the quantum core. A pulse generator generates the control signals input to the quantum core to perform quantum operations. A partial readout of the quantum state is re-injected into the quantum core to extend decoherence time. Access gates control movement of quantum particles in the quantum core. Errors are corrected from the readout before being re-injected into the quantum core. Internal and external calibration loops calculate error syndromes and calibrate control pulses input to the quantum core. Control of the quantum core is provided from an external support unit via the pattern generator or retrieved from classic memory where sequences of commands are stored in memory. A cryostat unit functions to cool the quantum computing core to approximately 4 Kelvin.
SEMICONDUCTOR OPTICAL PHASED ARRAYS (OPA's) AND METHODS RELATED THERETO
Disclosed is a system and method for solid-state 2D optical phased arrays (OPAs), which are fabricated from In-rich In.sub.1-xGa.sub.xN/GaN multiple quantum wells (MQWs). In-rich In.sub.xGa.sub.1-xN alloys possess the unique properties of exceptionally high free-carrier-induced refractive index (n) change and low optical loss. InGaN/GaN MQW pixels play the role of using a very small fraction of a laser beam to modulate the phase of the laser beam. The phase of each MQW pixel in the OPA is controlled independently via electro-optic effect through the integration between OPA pixels with a Laterally Diffused MOSFET (LDMOS) integrated circuit driver to achieve the manipulation of the distribution of optical power in the far field. The present invention is applicable to a wide range of applications, including the operation of LIDAR systems, laser weapons, laser illuminators, and laser imaging systems.
SEMICONDUCTOR OPTICAL PHASED ARRAYS (OPA's) AND METHODS RELATED THERETO
Disclosed is a system and method for solid-state 2D optical phased arrays (OPAs), which are fabricated from In-rich In.sub.1-xGa.sub.xN/GaN multiple quantum wells (MQWs). In-rich In.sub.xGa.sub.1-xN alloys possess the unique properties of exceptionally high free-carrier-induced refractive index (n) change and low optical loss. InGaN/GaN MQW pixels play the role of using a very small fraction of a laser beam to modulate the phase of the laser beam. The phase of each MQW pixel in the OPA is controlled independently via electro-optic effect through the integration between OPA pixels with a Laterally Diffused MOSFET (LDMOS) integrated circuit driver to achieve the manipulation of the distribution of optical power in the far field. The present invention is applicable to a wide range of applications, including the operation of LIDAR systems, laser weapons, laser illuminators, and laser imaging systems.
Devices with semiconductor hyperbolic metamaterials
A hyperbolic metamaterial assembly comprising alternating one or more first layers and one or more second layers forming a hyperbolic metamaterial, the one or more first layers comprising an intrinsic or non-degenerate extrinsic semiconductor and the one or more second layers comprising a two-dimensional electron or hole gas, wherein one of in-plane or out-of-plane permittivity of the hyperbolic metamaterial assembly is negative and the other is positive.
PHOTON SOURCES WITH MULTIPLE CAVITIES FOR GENERATION OF INDIVIDUAL PHOTONS
A method includes receiving input light having an input wavelength in a first optical resonator for causing resonance of the input light in the first optical resonator. The first optical resonator includes a non-linear optical medium. The method also includes converting at least a portion of the input light to a combination of first output light having a first output wavelength that is different from the input wavelength and second output light having a second output wavelength that is different from the input wavelength and the first output wavelength by passing the input light through the non-linear optical medium. The method further includes causing resonance of the first output light and the second output light in a second optical resonator. A portion of the first optical resonator is coupled to a portion of the second optical resonator.