An electro-optically active device comprising: a silicon on insulator (SOI) substrate including a silicon base layer, a buried oxide (BOX) layer on top of the silicon base layer, a silicon on insulator (SOI) layer on top of the BOX layer, and a substrate cavity which extends through the SOI layer, the BOX layer and into the silicon base layer, such that a base of the substrate cavity is formed by a portion of the silicon base layer; an electro-optically active waveguide including an electro-optically active stack within the substrate cavity; and a buffer region within the substrate cavity beneath the electro-optically active waveguide, the buffer region comprising a layer of Ge and a layer of GaAs.

Novel and useful quantum structures having a continuous well with control gates that control a local depletion region to form quantum dots. Local depleted well tunneling is used to control quantum operations to implement quantum computing circuits. Qubits are realized by modulating gate potential to control tunneling through local depleted region between two or more sections of the well. Complex structures with a higher number of qdots per continuous well and a larger number of wells are fabricated. Both planar and 3D FinFET semiconductor processes are used to build well to gate and well to well tunneling quantum structures. Combining a number of elementary quantum structure, a quantum computing machine is realized. An interface device provides an interface between classic circuitry and quantum circuitry by permitting tunneling of a single quantum particle from the classic side to the quantum side of the device. Detection interface devices detect the presence or absence of a particle destructively or nondestructively.

In a semiconductor light modulator having a multiple quantum well structure, a light spot size converter element provided in a light input/output section is easily and accurately manufactured. At least one layer of a compound semiconductor layer containing a P element is inserted into a desired position in the multiple quantum well structure containing an Al element. This layer is smaller than a band gap of a compound semiconductor used in a bather layer of the multiple quantum well.

In a semiconductor light modulator having a multiple quantum well structure, a light spot size converter element provided in a light input/output section is easily and accurately manufactured. At least one layer of a compound semiconductor layer containing a P element is inserted into a desired position in the multiple quantum well structure containing an Al element. This layer is smaller than a band gap of a compound semiconductor used in a bather layer of the multiple quantum well.

The disclosure describes various aspects of a system with scalable and programmable coherent waveform generators. A network and digital-to-analog conversion (DAC) cards used by the network are described where each DAC card has a clock divider/replicator device with an input SYNC pin, a digital logic component, and one or more DAC components, and each output of the DAC components is used to control optical beams for a separate qubit of a quantum information processing (QIP) system. The network also includes a first distribution network to provide a clock signal to the clock divider/replicator device in the DAC cards, and a second distribution network to provide a start signal to the DAC cards, where the start signal is used by the digital logic component in the DAC card to assert the input SYNC pin when the start signal is asserted unless it is masked by the digital logic component.

The disclosure describes various aspects of a system with scalable and programmable coherent waveform generators. A network and digital-to-analog conversion (DAC) cards used by the network are described where each DAC card has a clock divider/replicator device with an input SYNC pin, a digital logic component, and one or more DAC components, and each output of the DAC components is used to control optical beams for a separate qubit of a quantum information processing (QIP) system. The network also includes a first distribution network to provide a clock signal to the clock divider/replicator device in the DAC cards, and a second distribution network to provide a start signal to the DAC cards, where the start signal is used by the digital logic component in the DAC card to assert the input SYNC pin when the start signal is asserted unless it is masked by the digital logic component.

In one embodiment, an electro-optical modulator includes a waveguide having a first major surface and a second major surface opposite the first major surface. A cavity is disposed in the waveguide. Multiple quantum wells are disposed in the cavity.

In one embodiment, an electro-optical modulator includes a waveguide having a first major surface and a second major surface opposite the first major surface. A cavity is disposed in the waveguide. Multiple quantum wells are disposed in the cavity.

The disclosure is related to creating different functional micro devices by integrating functional tuning materials and creating an encapsulation capsule to protect these materials. Various embodiments of the present disclosure also related to improve light extraction efficiencies of micro devices by mounting micro devices at a proximity of a corner of a pixel active area and arranging QD films with optical layers in a micro device structure.

The disclosure is related to creating different functional micro devices by integrating functional tuning materials and creating an encapsulation capsule to protect these materials. Various embodiments of the present disclosure also related to improve light extraction efficiencies of micro devices by mounting micro devices at a proximity of a corner of a pixel active area and arranging QD films with optical layers in a micro device structure.