An optical attenuating structure is provided. The optical attenuating structure includes a substrate, a waveguide, doping regions, an optical attenuating member, and a dielectric layer. The waveguide is extended over the substrate. The doping regions are disposed over the substrate, and include a first doping region, a second doping region opposite to the first doping region and separated from the first doping region by the waveguide, a first electrode extended over the substrate and in the first doping region, and a second electrode extended over the substrate and in the second doping region. The first optical attenuating member is coupled with the waveguide and disposed between the waveguide and the first electrode. The dielectric layer is disposed over the substrate and covers the waveguide, the doping regions and the first optical attenuating member.

The present application relates to a method for manufacturing an electro-optical device, wherein a waveguide (3) is provided (S1), a planarization coat (7) overlapping at least a section of the waveguide (3) is fabricated (S2), the planarization coat (7) is provided with a spin-on-glass coating (9) (S3), at least in the region of the spin-on-glass coating (9), a preferably dry chemical etching treatment is carried out (S4), optionally, the steps of providing the planarization coat (7) with a spin-on-glass coating (9) and the etching treatment are repeated at least once (S5, S6), and an active element (10) is provided (S7) on or above the planarization coat (7) and above the waveguide (3).

The present application relates to a method for manufacturing an electro-optical device, wherein a waveguide (3) is provided (S1), a planarization coat (7) overlapping at least a section of the waveguide (3) is fabricated (S2), the planarization coat (7) is provided with a spin-on-glass coating (9) (S3), at least in the region of the spin-on-glass coating (9), a preferably dry chemical etching treatment is carried out (S4), optionally, the steps of providing the planarization coat (7) with a spin-on-glass coating (9) and the etching treatment are repeated at least once (S5, S6), and an active element (10) is provided (S7) on or above the planarization coat (7) and above the waveguide (3).

An optical frequency comb device includes: an optical waveguide; a first mirror disposed at a first position in the optical waveguide; a second mirror disposed at a second position different from the first position, in the optical waveguide; a gain medium and a saturable absorber which are disposed between the first mirror and the second mirror; and a controller that fixes one of a repetition frequency and a carrier-envelope offset frequency of an optical frequency comb output from an end of the optical waveguide, and changes the other of the repetition frequency and the carrier-envelope offset frequency.

An optical frequency comb device includes: an optical waveguide; a first mirror disposed at a first position in the optical waveguide; a second mirror disposed at a second position different from the first position, in the optical waveguide; a gain medium and a saturable absorber which are disposed between the first mirror and the second mirror; and a controller that fixes one of a repetition frequency and a carrier-envelope offset frequency of an optical frequency comb output from an end of the optical waveguide, and changes the other of the repetition frequency and the carrier-envelope offset frequency.

An optical logic gate decision-making circuit that combines non-linear materials, such as silicon nitride, on a silicon-on-insulator (SOI) substrate is described. Circuitry includes a ring cavity coupled to an input optical bus waveguide. The input optical bus waveguide receives an optical signal and passes the optical signal to the ring cavity. An electro-optical device, for instance a PN junction, is integrated within the ring cavity to modulate the optical signal such that an optical logic gate function is enabled. An output optical bus waveguide is also coupled to the ring cavity, which outputs the optical signal modified based on the optical logic gate function and based on a wavelength routing function. By using silicon nitride, the optical non-linearity of the materials enables an “all-optical” logic gate. Thus, the optical logic gate decision-making circuit is suitable for all-optical circuits, and support ultrafast optical signal processing and enabling packet switching of data.

An optical logic gate decision-making circuit that combines non-linear materials, such as silicon nitride, on a silicon-on-insulator (SOI) substrate is described. Circuitry includes a ring cavity coupled to an input optical bus waveguide. The input optical bus waveguide receives an optical signal and passes the optical signal to the ring cavity. An electro-optical device, for instance a PN junction, is integrated within the ring cavity to modulate the optical signal such that an optical logic gate function is enabled. An output optical bus waveguide is also coupled to the ring cavity, which outputs the optical signal modified based on the optical logic gate function and based on a wavelength routing function. By using silicon nitride, the optical non-linearity of the materials enables an “all-optical” logic gate. Thus, the optical logic gate decision-making circuit is suitable for all-optical circuits, and support ultrafast optical signal processing and enabling packet switching of data.

Examples described herein relate to an optical coupler. The optical coupler may include a first optical waveguide base layer, a second optical waveguide base layer, an insulating layer disposed over at least a portion of both the first optical waveguide base layer and the second optical waveguide base layer, and a semiconductor material layer disposed over the insulating layer. Overlapping portions of the first optical waveguide base layer, the insulating layer, and the semiconductor material layer form a first optical waveguide, and overlapping portions of the second optical waveguide base layer, the insulating layer, and the semiconductor material layer form a second optical waveguide. Moreover, the optical coupler may include a plurality of metal contacts to receive one or more first biasing voltages to operate one of the first optical waveguide base layer and the second optical waveguide base layer in an accumulation mode.

Examples described herein relate to an optical coupler. The optical coupler may include a first optical waveguide base layer, a second optical waveguide base layer, an insulating layer disposed over at least a portion of both the first optical waveguide base layer and the second optical waveguide base layer, and a semiconductor material layer disposed over the insulating layer. Overlapping portions of the first optical waveguide base layer, the insulating layer, and the semiconductor material layer form a first optical waveguide, and overlapping portions of the second optical waveguide base layer, the insulating layer, and the semiconductor material layer form a second optical waveguide. Moreover, the optical coupler may include a plurality of metal contacts to receive one or more first biasing voltages to operate one of the first optical waveguide base layer and the second optical waveguide base layer in an accumulation mode.

Structures for an optical power modulator and methods of fabricating a structure for an optical power modulator. A first waveguide core includes first and second sections. A second waveguide core includes a first section laterally adjacent to the first section of the first waveguide core and a second section laterally adjacent to the second section of the first waveguide core. An interconnect structure is formed over the first waveguide core and the second waveguide core. The interconnect structure includes first and second transmission lines. The first transmission line is physically connected within the interconnect structure to the first section of the first waveguide core. The second transmission line includes a first section physically connected within the interconnect structure to the second section of the first waveguide core and a second section adjacent to the first transmission line.