There is provided an optical signal processing device that generates a mask function in an optical domain to enable high-speed RC processing. For light emitted from a laser light source, an optical modulator modulates at a modulation period at least one of the intensity and phase values of the optical electric field. Thereby, the light emitted from the laser light source becomes an input signal. The input signal is entered into an optical FIR filter unit. For the input signal, the term corresponding to the mask function is multiplied at the optical FIR filter unit and weighted. Thereby, the input signal is converted into an input signal modulated. The modulated input signal enters via an optical coupler, an optical circulation circuit which is loaded with a variable attenuator and a nonlinear response element. The circulating optical signal is branched into two by an optical coupler. One branched light is converted into an intermediate signal at an optical receiver. The intermediate signal is computed by a formula at an electric signal processing circuit, and thereby, the operation as RC can be performed.

An electro-optic element includes a first waveguide, which is a plasmonic waveguide, including a first core having a ferroelectric material and a cladding having a first cladding portion. The first cladding portion includes, at a first interface with the ferroelectric material, a first cladding material. The electro-optic element includes a first and a second electrode for producing an electric field in the ferroelectric material when a voltage is applied between the first and second electrodes, for modulating a real part of a refractive index of the ferroelectric material. The element includes, in addition, a crystalline substrate on which the ferroelectric material is epitaxially grown with zero or one or more intermediate layers present between the substrate and the ferroelectric material. The element may have a second waveguide, which is a photonic waveguide, including for enabling evanescent coupling between the first and second waveguides.

An optical phase shifter according to an embodiment for achieving the object of the present disclosure includes a first semiconductor layer formed on a substrate, a second semiconductor layer having opposite polarity to the first semiconductor layer, an insulating layer formed between the first semiconductor layer and the second semiconductor layer, and including ferroelectrics, a first electrode connected to the first semiconductor layer, and a second electrode connected to the second semiconductor layer. According to an embodiment, the introduction of ferroelectric materials to a semiconductor-insulator-semiconductor (SIS) optical phase shifter brings about improvement in charge collection efficiency resulting from the negative capacitance effect, thereby achieving higher phase modulation efficiency and lower power consumption. Additionally, it is possible to realize a new structure of optical switch or modulator device through design changes of the type of ferroelectrics and the structural variables.

An optical device is described. At least a portion of the optical device includes ferroelectric non-linear optical material(s) and is fabricated utilizing ultraviolet lithography. In some aspects the at least the portion of the optical device is fabricated using deep ultraviolet lithography. In some aspects, the short range root mean square surface roughness of a sidewall of the at least the portion of the optical device is less than ten nanometers. In some aspects, the at least the portion of the optical device has a loss of not more than 2 dB/cm.

An optical device is described. At least a portion of the optical device includes ferroelectric non-linear optical material(s) and is fabricated utilizing ultraviolet lithography. In some aspects the at least the portion of the optical device is fabricated using deep ultraviolet lithography. In some aspects, the short range root mean square surface roughness of a sidewall of the at least the portion of the optical device is less than ten nanometers. In some aspects, the at least the portion of the optical device has a loss of not more than 2 dB/cm.

An electro-optic device includes a substrate and a waveguide on the substrate. The waveguide includes a layer stack including a plurality of electro-optic material layers interleaved with a plurality of interlayers and a waveguide core adjacent to the layer stack. The waveguide may include a pair of electrodes in electrical contact with the plurality of electro-optic material layers. The plurality of interlayers maintains a first lattice structure at room temperature and a cryogenic temperature. The plurality of electro-optic material layers maintains a second lattice structure and crystallographic phase at the room temperature and the cryogenic temperature.

The present invention provides an optical switch capable of functioning as an optical limiter, modulator, and dynamic attenuator utilizing a ferroelectric single crystal as the functional medium. The functionality is based upon a dynamic ferroelectric-to-ferroelectric phase transition occurring in the single crystal which can be perturbed through a hysteretic transition from an opaque to transparent state through the application of a compressive stress, an electric field, or both to the crystal.

The present invention provides an optical switch capable of functioning as an optical limiter, modulator, and dynamic attenuator utilizing a ferroelectric single crystal as the functional medium. The functionality is based upon a dynamic ferroelectric-to-ferroelectric phase transition occurring in the single crystal which can be perturbed through a hysteretic transition from an opaque to transparent state through the application of a compressive stress, an electric field, or both to the crystal.

Embodiments of the present invention disclose a photochromic lens module, a camera, and a terminal device. The photochromic lens module includes a lens module and a photochromic thin film. The lens module includes a first surface and a second surface. When the first surface is an incident surface, the second surface is a refractive surface; when the second surface is an incident surface, the first surface is a refractive surface. The photochromic thin film includes a first area and a second area. The photochromic thin film covers the first surface or the second surface. The first area uses a negative photochromic material, and the second area uses a positive photochromic material. By means of the embodiments of the present invention, a lens module can be effectively protected.

An optical device is described. At least a portion of the optical device includes ferroelectric non-linear optical material(s) and is fabricated utilizing ultraviolet lithography. In some aspects the at least the portion of the optical device is fabricated using deep ultraviolet lithography. In some aspects, the short range root mean square surface roughness of a sidewall of the at least the portion of the optical device is less than ten nanometers. In some aspects, the at least the portion of the optical device has a loss of not more than 2 dB/cm.