An optical device is described. At least a portion of the optical device includes ferroelectric non-linear optical material(s) and is fabricated utilizing ultraviolet lithography. In some aspects the at least the portion of the optical device is fabricated using deep ultraviolet lithography. In some aspects, the short range root mean square surface roughness of a sidewall of the at least the portion of the optical device is less than ten nanometers. In some aspects, the at least the portion of the optical device has a loss of not more than 2 dB/cm.

There is provided an optical signal processing device that generates a mask function in an optical domain to enable high-speed RC processing. For light emitted from a laser light source, an optical modulator modulates at a modulation period at least one of the intensity and phase values of the optical electric field. Thereby, the light emitted from the laser light source becomes an input signal. The input signal is entered into an optical FIR filter unit. For the input signal, the term corresponding to the mask function is multiplied at the optical FIR filter unit and weighted. Thereby, the input signal is converted into an input signal modulated. The modulated input signal enters via an optical coupler, an optical circulation circuit which is loaded with a variable attenuator and a nonlinear response element. The circulating optical signal is branched into two by an optical coupler. One branched light is converted into an intermediate signal at an optical receiver. The intermediate signal is computed by a formula at an electric signal processing circuit, and thereby, the operation as RC can be performed.

Provided is a wavelength conversion module that can be downsized by reducing the width of the housing and can reduce the mounting space. The wavelength conversion module including a wavelength conversion element includes: a lens barrel that is provided on a side surface of a metal housing and accommodates a lens for optically coupling the wavelength conversion element to an optical fiber; and a ferrule collar that is provided on the lens barrel and fixes a metal ferrule accommodating the optical fiber, and an input port and an output port are different from each other in any of the length in the optical axis direction of a plurality of the lens barrels, the length of a plurality of the metal ferrules, or a sum length of the lens barrels and the metal ferrules.

A system includes a classical computing system and one or more quantum computing chips coupled to the classical computing system. The one or more quantum computing chips includes one or more electro-optic devices. Each electro-optic device includes a substrate, a waveguide disposed on top of the substrate, and a layer stack disposed on top of the waveguide and including a plurality of electro-optic material layers interleaved with a plurality of interlayers. Each electro-optic device further comprising a waveguide core disposed on top of a portion of the layer stack. The plurality of interlayers are characterized by a first lattice structure and the plurality of electro-optic material layers are under tensile stress and are characterized by a second lattice structure and crystallographic phase.

An optical modulator includes an optical waveguide extending a length; and a plurality of Radio Frequency (RF) electrodes configured to modulate an optical signal in the optical waveguide, wherein the RF electrodes include an RF crossing located an end of the length and that is configured to equalize the optical signal. The optical signal is equalized via destructive interference after the RF crossing for attenuating modulation amplitude. At or near the end of the length, high frequencies of the optical signal are already strongly attenuated whereas low frequencies of the optical signal are not such that the low frequencies are equalized after the RF crossing.

A device includes a pair of electrodes and a dynamic material disposed between the pair of electrodes, the dynamic material including a crystalline microstructure configured to change between at least two states in response to a change in an electric field between the two electrodes. A material includes tetragonal lead magnesium niobate-lead titanate (PMN-PT) and at least one lanthanide series element. A method includes doping a lead magnesium niobate-lead titanate material with at least one lanthanide series element, and processing the PMN-PT material to form tetragonal PMN-PT. A further method includes forming a low refractive index nanostructured grating over a carrier substrate, forming a high refractive index layer over the low refractive index grating to produce a nanostructured coupling element, forming an adhesive layer over the nanostructured coupling element, and affixing the nanostructured coupling element to a high index waveguide.

A device includes a pair of electrodes and a dynamic material disposed between the pair of electrodes, the dynamic material including a crystalline microstructure configured to change between at least two states in response to a change in an electric field between the two electrodes. A material includes tetragonal lead magnesium niobate-lead titanate (PMN-PT) and at least one lanthanide series element. A method includes doping a lead magnesium niobate-lead titanate material with at least one lanthanide series element, and processing the PMN-PT material to form tetragonal PMN-PT. A further method includes forming a low refractive index nanostructured grating over a carrier substrate, forming a high refractive index layer over the low refractive index grating to produce a nanostructured coupling element, forming an adhesive layer over the nanostructured coupling element, and affixing the nanostructured coupling element to a high index waveguide.

The present invention relates to an Electro-Optical (E-O) crystal elements, their applications and the processes for the preparation thereof more specifically, the present invention relates to the E-O crystal elements (which can be made from doped or un-doped PMN-PT, PIN-PMN-PT or PZN-PT ferroelectric crystals) showing super-high linear E-O coefficient .sub.c, e.g., transverse effective linear E-O coefficient .sup.T.sub.c, more than 1100 pm/V and longitudinal effective linear E-O coefficient .sup.l.sub.c up to 527 pm/V, which results in a very low half-wavelength voltage V.sup.l.sub. below 200V and V.sup.T.sub. below about 87V in a wide number of modulation, communication, laser, and industrial uses.

The present invention relates to an Electro-Optical (E-O) crystal elements, their applications and the processes for the preparation thereof more specifically, the present invention relates to the E-O crystal elements (which can be made from doped or un-doped PMN-PT, PIN-PMN-PT or PZN-PT ferroelectric crystals) showing super-high linear E-O coefficient .sub.c, e.g., transverse effective linear E-O coefficient .sup.T.sub.c, more than 1100 pm/V and longitudinal effective linear E-O coefficient .sup.l.sub.c up to 527 pm/V, which results in a very low half-wavelength voltage V.sup.l.sub. below 200V and V.sup.T.sub. below about 87V in a wide number of modulation, communication, laser, and industrial uses.

Embodiments of the present invention disclose a photochromic lens module, a camera, and a terminal device. The photochromic lens module includes a lens module and a photochromic thin film. The lens module includes a first surface and a second surface. When the first surface is an incident surface, the second surface is a refractive surface; when the second surface is an incident surface, the first surface is a refractive surface. The photochromic thin film includes a first area and a second area. The photochromic thin film covers the first surface or the second surface. The first area uses a negative photochromic material, and the second area uses a positive photochromic material. By means of the embodiments of the present invention, a lens module can be effectively protected.