Single-shot transient optical signals are recorded in a time regime of picoseconds to nanosecond. An auxiliary pump beam is crossed through the signal to sample a diagonal slice of space-time, analogous to a rolling shutter. The slice is then imaged onto an ordinary camera, where the recorded spatial trace is a direct representation of the time content of the signal. The pump samples the signal by optically exciting carriers that modify the refractive index in a conventional semiconductor wafer. Through use of birefringent retarders surrounding the wafer, the integrating response of the rapidly excited but persistent carriers is differentiated by probing with two polarization-encoded time-staggered signal replicas that are recombined to interfere destructively.

Devices and/or methods provided herein relate to providing conversion of photons between an optical domain and a microwave domain. An electronic structure can comprise a resonator assembly comprising a microwave resonator and an optical resonator, an optical pump waveguide that transmits an optical pump input to the resonator assembly, and an optical signal waveguide, separate from the optical pump waveguide, that transmits an optical signal relative to the resonator assembly. The electronic structure further can comprise a microwave signal waveguide that transmits a microwave signal relative to the resonator assembly. The optical pump waveguide can comprise a delay portion that delays receipt of the optical pump input to the resonator assembly through the optical pump waveguide to a time after reduction of a majority of decoherence of the resonator assembly caused by scattering of a portion of the optical pump input, which portion does not enter the optical pump waveguide.

A metallic quantum well may be formed by interposing a layer of metallic well material two layers of barrier material. Two or more metallic quantum wells may be combined to form a coupled metallic quantum well. The absorption spectrum and the emission spectrum of the coupled metallic quantum well may be tuned by at least adjusting the dimensions of the individual metallic quantum wells and/or the materials forming the metallic quantum wells. The metallic quantum well and/or the coupled metallic quantum well may exhibit sufficient nonlinearity even at a miniaturized scale. As such, the metallic quantum well and/or coupled metallic quantum well may be used for a variety of on-chip applications including, for example, as part of an on-chip pulse limiter, an on-chip super-continuum generator, and/or the like.

A wideband ultra-high refractive index mesoscopic crystal structure including: a first layer with high-conductivity unit bodies arranged in a matrix form, and a low-conductivity material disposed between the high-conductivity unit bodies; a second layer with high-conductivity unit bodies arranged in a matrix form, and a low-conductivity material disposed between the high-conductivity unit bodies; a first shield layer existing between the first and second layers and made of a low-conductivity material; and a second shield layer made of a low-conductivity material disposed on a side of the second layer such that the second layer is disposed between the first shield layer and the second shield layer, wherein the high-conductivity unit bodies in the first layer overlap the high-conductivity unit bodies arranged in the second layer, and wherein the first layer, the first shield layer, the second layer, and the second shield layer are sequentially stacked one or more times.

A solid state optical beam steering device and method of operation includes converting a frequency or wavelength of a signal in a non-linear converter associated with one channel just before launch. A second channel has a similar constructions and operation. A processor compares the phase difference between the two channels and uses the difference to horizontally steer a beam without moving mechanical parts. This establishes the solid-state nature of the present disclosure. The non-linear converter may be a quasi-phase matched non-linear converter with alternating crystal domains.

A method of performing HVPE heteroepitaxy comprises exposing a substrate to a carrier gas, a first precursor gas, a Group II/III element, and ternary-forming gasses (V/VI group precursor), to form a heteroepitaxial growth of a binary, ternary, and/or quaternary compound on the substrate; wherein the carrier gas is H.sub.2, wherein the first precursor gas is HCl, the Group II/III element comprises at least one of Zn, Cd, Hg, Al, Ga, and In; and wherein the ternary-forming gasses comprise at least two or more of AsH.sub.3 (arsine), PH.sub.3 (phosphine), H.sub.2Se (hydrogen selenide), H.sub.2Te (hydrogen telluride), SbH.sub.3 (hydrogen antimonide, or antimony tri-hydride, or stibine), H.sub.2S (hydrogen sulfide), NH.sub.3 (ammonia), and HF (hydrogen fluoride); flowing the carrier gas over the Group II/III element; exposing the substrate to the ternary-forming gasses in a predetermined ratio of first ternary-forming gas to second ternary-forming gas (1tf:2tf ratio); and changing the 1tf:2tf ratio over time.

Systems, devices, and methods are provided for all-optical reconfigurable activation devices for realizing various activations functions having normalized output power. The device and systems disclosed herein include an interferometer comprising a first branch formed of a first waveguide and a second branch formed of a second waveguide. A resonator cavity is coupled to the second first waveguide and at least one phase-shift mechanism is coupled to one of the second waveguide and the resonator cavity. The at least one phase-shift mechanism is configured to control biases of the interferometer to achieve a desired activation function at an output of the interferometer, and an optical amplification mechanism is coupled to the output of the interferometer and configured to add optical gain to the desired activation function.

A quantum rod, a synthesis method of the quantum rod and a quantum rod display device are discussed. The quantum rod according to an embodiment includes a core, a first shell covering the core, and a second shell covering a side of the first shell. In the quantum rod, a first thickness of the first shell is greater than a second thickness of the second shell, and a first length of the first shell is smaller than a second length of the second shell.

Optical component (10) for modulating light field (1) incident thereon, particularly amplitude and/or phase in dependency on intensity (I) thereof, includes stack (11) of refractive layers (12, 13) on substrate (14), made of materials having third-order nonlinearity, and having alternatingly varying refractive indices (n), including linear contribution (n.sub.0) and non-linear contribution (n.sub.2), and determining reflectance and transmittance spectra of the optical component, wherein refractive layers (12, 13) are configured such that reflectance and transmittance of the optical component have a Kerr effect based dependency on intensity (I) of the incident light field with n=n.sub.0+I.Math.n.sub.2, and refractive layers (12, 13) are made of at least one of dielectric and semiconductor layers, wherein non-linear contribution (n.sub.2) is below 10.sup.12 cm.sup.2/W. A resonator device including the optical component, a method of modulating a light field using the optical component and a method of manufacturing the optical component are described.

An electro-optic modulator includes a doped semiconductor crystal having a crystallographic surface having an amplitude modulation orientation, a first metal electrode located on a first surface of the doped semiconductor crystal, a second metal electrode located on a second surface of the doped semiconductor crystal, and accumulation space charge regions located within surface regions of the doped semiconductor crystal that are proximal to the first metal electrode and the second metal electrode and including excess charge carriers of a same type as majority charge carriers of the doped semiconductor crystal.