The present invention relates to a resist composition, especially for use in the production of electronic components via electron beam lithography. In addition to the usual base polymeric component (resist polymer), a secondary electron generator is included in resist compositions of the invention in order to promote secondary electron generation. This unique combination of components increases the exposure sensitivity of resists in a controlled fashion which facilitates the effective production of high-resolution patterned substrates (and consequential electronic components), but at much higher write speeds.

The present invention relates to a resist composition, especially for use in the production of electronic components via electron beam lithography. In addition to the usual base polymeric component (resist polymer), a secondary electron generator is included in resist compositions of the invention in order to promote secondary electron generation. This unique combination of components increases the exposure sensitivity of resists in a controlled fashion which facilitates the effective production of high-resolution patterned substrates (and consequential electronic components), but at much higher write speeds.

A three-dimensional photonic crystal template on a reflective substrate displays a periodic patterned from multibeam interference lithography with constructive volumes of a cured photoresist composition and destructive volumes that are voids free of mass containing defects and where the reflective substrate is conductive. A method to generate the three-dimensional photonic crystal template includes using at least four laser beams of unequal intensity, oriented such that a dose of light controlled by the irradiation time generates the periodic pattern with a small dose, where the light reflected from the substrate is insufficient to activate a threshold quantity of photoinitiator in the destructive volumes for the formation of any anomalous condensed matter in the intended void volume.

A three-dimensional photonic crystal template on a reflective substrate displays a periodic patterned from multibeam interference lithography with constructive volumes of a cured photoresist composition and destructive volumes that are voids free of mass containing defects and where the reflective substrate is conductive. A method to generate the three-dimensional photonic crystal template includes using at least four laser beams of unequal intensity, oriented such that a dose of light controlled by the irradiation time generates the periodic pattern with a small dose, where the light reflected from the substrate is insufficient to activate a threshold quantity of photoinitiator in the destructive volumes for the formation of any anomalous condensed matter in the intended void volume.

Methods for reticle enhancement technology (RET) for use with variable shaped beam (VSB) lithography include inputting a desired pattern to be formed on a substrate; determining an initial mask pattern from the desired pattern for the substrate; optimizing the initial mask pattern for wafer quality using a VSB exposure system; and outputting the optimized mask pattern. Methods for fracturing a pattern to be exposed on a surface using VSB lithography include inputting an initial pattern; overlaying the initial pattern with a two-dimensional grid, wherein an initial set of VSB shots are formed by the union of the initial pattern with locations on the grid; merging two or more adjacent shots in the initial set of VSB shots to create a larger shot in a modified set of VSB shots; and outputting the modified set of VSB shots.

Methods for reticle enhancement technology (RET) for use with variable shaped beam (VSB) lithography include inputting a desired pattern to be formed on a substrate; determining an initial mask pattern from the desired pattern for the substrate; optimizing the initial mask pattern for wafer quality using a VSB exposure system; and outputting the optimized mask pattern. Methods for fracturing a pattern to be exposed on a surface using VSB lithography include inputting an initial pattern; overlaying the initial pattern with a two-dimensional grid, wherein an initial set of VSB shots are formed by the union of the initial pattern with locations on the grid; merging two or more adjacent shots in the initial set of VSB shots to create a larger shot in a modified set of VSB shots; and outputting the modified set of VSB shots.

Methods for reticle enhancement technology (RET) for use with variable shaped beam (VSB) lithography include inputting a desired pattern to be formed on a substrate; determining an initial mask pattern from the desired pattern for the substrate; optimizing the initial mask pattern for wafer quality using a VSB exposure system; and outputting the optimized mask pattern. Methods for fracturing a pattern to be exposed on a surface using VSB lithography include inputting an initial pattern; overlaying the initial pattern with a two-dimensional grid, wherein an initial set of VSB shots are formed by the union of the initial pattern with locations on the grid; merging two or more adjacent shots in the initial set of VSB shots to create a larger shot in a modified set of VSB shots; and outputting the modified set of VSB shots.

Methods for reticle enhancement technology (RET) for use with variable shaped beam (VSB) lithography include inputting a desired pattern to be formed on a substrate; determining an initial mask pattern from the desired pattern for the substrate; optimizing the initial mask pattern for wafer quality using a VSB exposure system; and outputting the optimized mask pattern. Methods for fracturing a pattern to be exposed on a surface using VSB lithography include inputting an initial pattern; overlaying the initial pattern with a two-dimensional grid, wherein an initial set of VSB shots are formed by the union of the initial pattern with locations on the grid; merging two or more adjacent shots in the initial set of VSB shots to create a larger shot in a modified set of VSB shots; and outputting the modified set of VSB shots.

A grating structure for a diffractive optic includes grating lines, each of which is approximated by successive segments. Longitudinal axes of the segments each have an angle relative to a first coordinate axis of a reference coordinate system. A first section of a first one of the grating lines is approximated by a first group of the segments, and a second section adjacent to the first section of the first grating line is approximated by a second group of segments. The longitudinal axes of a major portion of the segments of the first group have a first predetermined angle relative to the first coordinate axis of the reference coordinate system, and the longitudinal axes of a major portion of the segments of the second group have a second predetermined angle different from the first predetermined angle relative to the first coordinate axis of the reference coordinate system.

Methods of fabricating lithographic masks include performing mask process correction (MPC) on a mask tape out (MTO) design layout. Performing MPC may include identifying a plurality of unit cells (each being iterated in the MTO design layout and including a plurality of curve patterns), and performing model-based MPC on at least one of the plurality of unit cells. These methods may further include performing electron beam exposure based on the MTO design layout on which the MPC is performed. The performing model-based MPC on at least one of the plurality of unit cells may be based on at least one of an aspect ratio, sizes, curvatures of curved edges, density, and a duty of the plurality of curve patterns.