According to one embodiment, a pattern drawing method includes correcting a drawing parameter for a pattern to be drawn on a resist film on a surface of a substrate. The correction being based on drawing information, height information, and dimensional difference information. The drawing information is design data for drawing the pattern on the resist film by irradiating the resist film with an electron beam. The height information indicates changes in surface height of the substrate. The dimensional difference information includes differences between a dimension of a pattern as indicated in the design data and a dimension of a pattern formed on the substrate by processing the substrate using a resist film patterned according to the drawing information as a mask. The correction of the drawing parameter reduces a dimensional difference between design data and a pattern formed on a target portion on the surface of the substrate.

A method of making a semiconductor device includes defining a pattern including a plurality of sub-patterns on the photomask in the pattern region based on the identifying information. The defining of the pattern includes defining a first sub-pattern of the plurality of sub-patterns having a first spacing from a second sub-pattern of the plurality of sub-patterns, wherein the first spacing is different from a second spacing between the second sub-pattern and a third sub-pattern of the plurality of sub-patterns, or rotating the first sub-pattern about an axis perpendicular to a top surface of the photomask relative to the second sub-pattern.

A method for manufacturing-aware editing of circuit layouts driven by predictions regarding predicted manufactured wafer contours generated by a machine-trained network. The method allows for fast edit loops in interactive editing timeframes, in which the predicted manufactured wafer contours corresponding to design edits are presented within seconds of the edits themselves. In some embodiments, the wafer contours take mask OPC/ILT and lithography effects into account, as determined by the machine trained network.

Reticle and methods for forming a device or reticle are presented. A reticle is provided with a device pattern and a first monitoring pattern. The first monitoring pattern includes a plurality of first test cells having a first test cell area and a first test pattern. The first test cells have different first pitch ratios to an anchor pitch and the first test pattern fills the first test cell area of a first test cell. A wafer with a resist layer is exposed with a lithographic system using the reticle. The resist is developed to form a patterned resist layer on the wafer and the wafer is processed using the patterned resist layer.

A composite material comprises a polymer matrix having microstructure filler materials that comprise a plurality of interconnected units wherein the units are formed of connected tubes. The tubes may be formed by photo-initiating the polymerization of a monomer in a pattern of interconnected units to form a polymer microlattice, removing unpolymerized monomer, coating the polymer microlattice with a metal, removing the polymer microlattice to leave a metal microlattice, growing or depositing a material on the metal microlattice such as graphene, hexagonal boron nitride or other ceramic, and subsequently removing the metal microlattice.

A composite material comprises a polymer matrix having microstructure filler materials that comprise a plurality of interconnected units wherein the units are formed of connected tubes. The tubes may be formed by photo-initiating the polymerization of a monomer in a pattern of interconnected units to form a polymer microlattice, removing unpolymerized monomer, coating the polymer microlattice with a metal, removing the polymer microlattice to leave a metal microlattice, growing or depositing a material on the metal microlattice such as graphene, hexagonal boron nitride or other ceramic, and subsequently removing the metal microlattice.

A pattern correction amount calculating apparatus includes: an accepting unit that accepts pattern information; a micro side group acquiring unit that acquires a micro side group, which is a group of continuous sides forming a contour of a pattern figure indicated by the pattern information, and is a group of micro sides that are each small enough to satisfy a predetermined condition; a virtual side acquiring unit that acquires a virtual side, which is a side that approximates micro sides contained in the micro side group; a virtual side correction amount calculating unit that calculates a virtual side correction amount, which is a correction amount for the virtual side; and a micro side correction amount calculating unit that calculates micro side correction amounts, which are correction amounts respectively for the micro sides contained in the micro side group corresponding to the virtual side, using the virtual side correction amount.

A pattern correction amount calculating apparatus includes: an accepting unit that accepts pattern information; a micro side group acquiring unit that acquires a micro side group, which is a group of continuous sides forming a contour of a pattern figure indicated by the pattern information, and is a group of micro sides that are each small enough to satisfy a predetermined condition; a virtual side acquiring unit that acquires a virtual side, which is a side that approximates micro sides contained in the micro side group; a virtual side correction amount calculating unit that calculates a virtual side correction amount, which is a correction amount for the virtual side; and a micro side correction amount calculating unit that calculates micro side correction amounts, which are correction amounts respectively for the micro sides contained in the micro side group corresponding to the virtual side, using the virtual side correction amount.

A negative resist composition comprising an onium salt having formula (A) and a base polymer is provided. The resist composition exhibits a high resolution during pattern formation and forms a pattern with minimal LER. ##STR00001##

A negative resist composition comprising an onium salt having formula (A) and a base polymer is provided. The resist composition exhibits a high resolution during pattern formation and forms a pattern with minimal LER. ##STR00001##