A method of manufacturing a semiconductor device includes forming a first resist layer over a substrate, and forming a second resist layer over the first resist layer. The second resist layer is patterned to expose a portion of the first resist layer to form a second resist layer pattern. The first resist layer is exposed to extreme ultraviolet (XUV) radiation diffracted by the second resist layer pattern. Portions of the first resist layer exposed to the XUV radiation diffracted by the second resist layer are removed.

A method for reducing resist consumption (RRC) is provided. The method includes treating a surface of a substrate using a RRC composition and forming a photoresist layer comprising a metal-containing material on the RRC composition treated surface. The RRC composition includes a solvent and an acid or a base. The solvent has a dispersion parameter between 10 and 25. The acid has an acid dissociation constant between -20 and 6.8. The base having an acid dissociation constant between 7.2 and 45.

A method of operating a manufacturing platform includes moving a substrate through the manufacturing platform using one or more transfer modules. A dry resist is deposited on the substrate using a resist deposition module of the manufacturing platform. The substrate is examined for distortion with a metrology system that is part of a transfer module. The dry resist is exposed to UV or EUV radiation using an exposure tool of the manufacturing platform. Exposed or unexposed portions of the dry resist are removed using an etch module of the manufacturing platform.

An organically modified metal oxide nanoparticle includes a core, a first modification group, and a second modification group. The core includes a plurality of metal atoms and a plurality of oxygen atoms bonded to the plurality of metal atoms. The first modification group is a saturated carboxylic acid/carboxylate ligand coordinated to the core. The second modification group is coordinated to the core, and is an inorganic anion having a smaller size than the first modification group and/or a saturated carboxylic acid/carboxylate ligand having a smaller molecular weight than the first modification group.

As described herein, photosensitive composition comprises RSnL.sub.3, where R is a hydrocarbyl ligand with 1-20 carbon atoms and one or more silicon and/or germanium heteroatoms and L is an acetylide ligand (—C≡CA, where A is a silyl group with 0 to 6 carbon atoms or an organo group with 1 to 10 carbon atoms). Methods are described wherein photosensitive compositions are synthesized by reacting RX, where X is a halide, and MSnL.sub.3, where M is an alkali metal, alkali earth metal or a pseudo-alkali earth metal, L is an acetylide or a dialkylamide. The radiation sensitive compositions are effective for radiation based patterning, such as with EUV light.

A method of manufacturing a semiconductor device includes forming a first protective layer over an edge portion of a first main surface of a semiconductor substrate. A metal-containing photoresist layer is formed over the first main surface of the semiconductor substrate. The first protective layer is removed, and the metal-containing photoresist layer is selectively exposed to actinic radiation. A second protective layer is formed over the edge portion of the first main surface of the semiconductor substrate. The selectively exposed photoresist layer is developed to form a patterned photoresist layer, and the second protective layer is removed.

A method for processing a substrate is described. The method includes forming a metal containing resist layer onto a substrate, patterning the metal containing resist layer, and performing a post exposure bake on the metal containing resist layer. The post exposure bake on the metal containing resist layer is a field guided post exposure bake operation and includes the use of an electric field to guide the ions or charged species within the metal containing resist layer. The field guided post exposure bake operation may be paired with a post development field guided bake operation.

A light-enhanced wafer processing system disclosed herein which includes a rotatable chuck configured to support and selectively rotate at least one wafer, at least one dispenser body configured to selectively flow at least one photolytic material onto a surface of the wafer, and at least one optical radiation source may be configured to provide optical radiation to at least a portion of the wafer having photolytic material applied thereto, wherein the optical radiation is configured to result in the formation of optically-induced radicals having enhanced reactivity with at least one material applied to the wafer.

A mirror device includes a frame body, a shaft member provided inside the frame body and connected to the frame body at both end portions, and a reflection member fixed to the shaft member and provided so as to be capable of swinging around an axis of the shaft member. The reflection member has a base portion provided along an axial direction of the shaft member and a reflection portion provided on the base portion. The base portion has a three-dimensional uneven structure including a bottom wall portion having a main surface provided along the axial direction of the shaft member and a plurality of side wall portions extending from the bottom wall portion on the side opposite to the reflection portion.

A radiation-sensitive composition contains: a polymetalloxane including a structural unit represented by formula (1); a radiation-sensitive acid generator; and a solvent. In the following formula (1), M represents a germanium atom, a tin atom or a lead atom; Ar.sup.1 represents a substituted or unsubstituted aryl group having 6 to 20 ring atoms or a substituted or unsubstituted heteroaryl group having 5 to 20 ring atoms; R.sup.1 represents a monovalent organic group having 1 to 20 carbon atoms, a hydrogen atom, a halogen atom or a hydroxy group; and n is 2 or 3. ##STR00001##