Organometallic solutions have been found to provide high resolution radiation based patterning using thin coatings. The patterning can involve irradiation of the coated surface with a selected pattern and developing the pattern with a developing agent to form the developed image. The patternable coatings may be susceptible to positive-tone patterning or negative-tone patterning based on the use of an organic developing agent or an aqueous acid or base developing agent. The radiation sensitive coatings can comprise a metal oxo/hydroxo network with organic ligands. A precursor solution can comprise an organic liquid and metal polynuclear oxo-hydroxo cations with organic ligands having metal carbon bonds and/or metal carboxylate bonds.

Photoresist materials described herein may include various types of tin (Sn) clusters having one or more types of ligands. As an example, a photoresist material described herein may include tin clusters bearing two or more different types of carboxylate ligands. As another example, a photoresist material described herein may include tin oxide clusters that include carbonate ligands. The two or more different types of carboxylate ligands and the carbonate ligands may reduce, minimize, and/or prevent crystallization of the photoresist materials described herein, which may increase the coating performance of the photoresist materials and may decrease the surface roughness of photoresist layers formed using the photoresist materials described herein.

A method for forming a fluorinated oxostannate film involves vaporizing a volatile fluorinated alkyltin compound having at least two hydrolytically sensitive functional groups or at least two reactive functional groups which are sensitive to oxidation at a temperature greater than 200° C.; providing a substrate; physisorbing or chemisorbing the fluorinated alkyltin compound onto the substrate; and exposing the physisorbed or chemisorbed fluorinated alkyltin compound to a sequence of hydrolysis, irradiation, and/or oxidation steps to form the fluorinated oxostannate thin film on the substrate. Fluorinated alkyltin compounds having formula (I) are also described, in which R.sup.f is a fluorinated or partially fluorinated linear or branched alkyl group having about 1 to about 5 carbon atoms, X is a dialkylamino group having about 1 to about 4 carbon atoms, and n is 1 or 2:

(R.sup.fCH.sub.2).sub.nSnX.sub.(4-n)  (I)

Various embodiments described herein relate to methods, apparatus, and systems for treating metal-containing photoresist to modify material properties of the photoresist. For instance, the techniques herein may involve providing a substrate in a process chamber, where the substrate includes a photoresist layer over a substrate layer, and where the photoresist includes metal, and treating the photoresist to modify material properties of the photoresist such that etch selectivity in a subsequent post-exposure dry development process is increased. In various embodiments, the treatment may involve exposing the substrate to elevated temperatures and/or to a remote plasma. One or more process conditions such as temperature, pressure, ambient gas chemistry, gas flow/ratio, and moisture may be controlled during treatment to tune the material properties as desired.

A layered structure including a luminescent layer including a quantum dot polymer composite pattern; an inorganic layer disposed on the luminescent layer, the inorganic layer including a metal oxide, a metal nitride, a metal oxynitride, a metal sulfide, or a combination thereof; and an organic layer being disposed between the luminescent layer and the inorganic layer, the organic layer including an organic polymer, a method of producing the same, and a liquid crystal display including the same. The quantum dot polymer composite pattern includes a repeating section including a polymer matrix; and a plurality of quantum dots (e.g., dispersed) in the polymer matrix, the repeating unit including a first section configured to emit light of a first light, and wherein the inorganic layer is disposed on at least a portion of a surface of the repeating section.

Various embodiments herein relate to techniques for depositing photoresist material on a substrate. For example, the tin techniques may involve providing the substrate in a reaction chamber; providing a first and second reactant to the reaction chamber, where the first reactant is an organo-metallic precursor having a formula of M1.sub.aR1.sub.bL1.sub.c, where: M1 is a metal having a high patterning radiation-absorption cross-section, R1 is an organic group that survives the reaction between the first reactant and the second reactant and is cleavable from M1 under exposure to patterning radiation, L1 is a ligand, ion, or other moiety that reacts with the second reactant, a≥1, b≥1, and c≥1, and where at least one of the following conditions is satisfied: the photoresist material comprises two or more high-patterning radiation absorbing elements, and/or the photoresist material comprises a composition gradient along a thickness of the photoresist material.

A metal-containing photoresist film may be deposited on a semiconductor substrate using a dry deposition technique. Unintended metal-containing photoresist material may form on internal surfaces of a process chamber during deposition, bevel and backside cleaning, baking, development, or etch operations. An in situ dry chamber clean may be performed to remove the unintended metal-containing photoresist material by exposure to an etch gas. The dry chamber clean may be performed at elevated temperatures without striking a plasma. In some embodiments, the dry chamber clean may include pumping/purging and conditioning operations.

Embodiments disclosed herein include a method of patterning a metal oxo photoresist. In an embodiment, the method comprises depositing the metal oxo photoresist on a substrate, treating the metal oxo photoresist with a first treatment, exposing the metal oxo photoresist with an EUV exposure to form exposed regions and unexposed regions, treating the exposed metal oxo photoresist with a second treatment, and developing the metal oxo photoresist.

Disclosed herein are methods for using cracked film lithography (CFL) for patterning transparent conductive metal grids. CFL can be vacuum- and Ag-free, and it forms more durable grids than nanowire approaches.

A method for fabricating an imprint master 1 comprises a first forming step of forming micro-protrusion-and-recess structures 23 having a first average pitch on one surface of a substrate 10 and a second forming step of forming main recesses 21 or main protrusions 22 having a second average pitch larger than the first average pitch on the one surface of the substrate 10 having the micro-protrusion-and-recess structures 23 formed thereon, in a manner maintaining a shape of at least a portion of the micro-protrusion-and-recess structures 23 in the main recesses 21 or the main protrusions 22 while the main recesses 21 or the main protrusions 22 are being formed.